公开(公告)号：US20060022672A1

公开(公告)日：2006-02-02

申请号：US10909122

申请日：2004-07-30

申请人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

发明人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

IPC分类号： G01R33/02

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

公开(公告)号：US20060193080A1

公开(公告)日：2006-08-31

申请号：US11069414

申请日：2005-02-28

申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto Marinero ,  Bruce Gurney

发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto Marinero ,  Bruce Gurney

IPC分类号： G11B5/37

CPC分类号： G11B5/376

摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便暴露于与磁记录位基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。

公开(公告)号：US20060018054A1

公开(公告)日：2006-01-26

申请号：US10897454

申请日：2004-07-22

申请人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

发明人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.

摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

公开(公告)号：US07295406B2

公开(公告)日：2007-11-13

申请号：US10897454

申请日：2004-07-22

申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

IPC分类号： G11B5/39

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.

摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

公开(公告)号：US07203036B2

公开(公告)日：2007-04-10

申请号：US10909122

申请日：2004-07-30

申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

IPC分类号： G11B5/39 ,  G01R33/02 ,  G01R27/08

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

公开(公告)号：US07440227B2

公开(公告)日：2008-10-21

申请号：US11069414

申请日：2005-02-28

申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

IPC分类号： G11B5/37

CPC分类号： G11B5/376

摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便从磁记录钻头暴露于基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。