公开(公告)号：US20060022672A1

公开(公告)日：2006-02-02

申请号：US10909122

申请日：2004-07-30

申请人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

发明人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

IPC分类号： G01R33/02

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

公开(公告)号：US20060018054A1

公开(公告)日：2006-01-26

申请号：US10897454

申请日：2004-07-22

申请人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

发明人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.

摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

公开(公告)号：US20070253243A1

公开(公告)日：2007-11-01

申请号：US11380498

申请日：2006-04-27

申请人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

发明人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。

公开(公告)号：US20060289984A1

公开(公告)日：2006-12-28

申请号：US11168070

申请日：2005-06-27

申请人： Robert Fontana ,  Stefan Maat

发明人： Robert Fontana ,  Stefan Maat

IPC分类号： H01L23/52

CPC分类号： H01L43/08 ,  G11C11/14 ,  H01L43/12

摘要： EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.

公开(公告)号：US20060103983A1

公开(公告)日：2006-05-18

申请号：US10990926

申请日：2004-11-17

申请人： Robert Fontana ,  Neil Robertson ,  Huey-Min Tzeng

发明人： Robert Fontana ,  Neil Robertson ,  Huey-Min Tzeng

IPC分类号： G11B5/41 ,  G11B5/10 ,  G11B5/012 ,  G11B17/00 ,  G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/332 ,  G11B5/3906 ,  G11B5/40

摘要： An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.

摘要翻译： 描述了用于研磨和制造读/写头的装置和方法。 研磨方法包括对其中制造读/写头的结构执行第一研磨处理。 第一次研磨工艺用于减少第一电阻区域。 第一电阻区域位于结构的表面附近。 第一个研磨过程是实现第一次研磨基准。 研磨方法还包括在第二电阻区域上进行第二研磨处理。 第二次研磨过程以比第一次研磨过程低的速度进行。 第二次研磨过程是实现第二次研磨基准。 第二电阻区域介于第一电阻区域和读/写头之间。 第二电阻区域具有与第二电阻区域不同的电阻值。

公开(公告)号：US5493467A

公开(公告)日：1996-02-20

申请号：US364913

申请日：1994-12-27

申请人： William C. Cain ,  Robert Fontana ,  Hugo A. Santini ,  Mason L. Williams, III

发明人： William C. Cain ,  Robert Fontana ,  Hugo A. Santini ,  Mason L. Williams, III

IPC分类号： G11B5/00 ,  G11B5/39 ,  G11B5/147 ,  G11B5/235

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3925 ,  G11B2005/0016 ,  G11B2005/3996

摘要： The present invention is a yoke spin valve MR read head which electrically connects a spin valve MR sensor to spaced apart yoke portions. First and second yoke pieces are electrically connected at a head surface and are insulated from one another at a back gap which is remotely located from the head surface. The first yoke piece has a break which divides it into first and second portions which are spaced from one another. The spin valve MR sensor is located within this break and electrically interconnects the first and second portions of the first yoke piece. First and second leads are connected to the first and second yoke pieces respectively and receive a current from a current source for applying a sense current to the spin valve MR sensor via the first and second yoke pieces. When a magnetic medium is moved adjacent the head surface of the read head the yoke pieces serve as conductors for transmitting sense current to the spin valve MR sensor as well as functioning as a flux guide. Flux incursions propagated from the magnetic medium to the spin valve MR sensor via the yoke cause relative rotations between directions of magnetic moments of a pinned layer and a free layer which correspond to signals which can be processed by a signal processing device. The signal strength of the yoke spin valve MR sensor is superior to an anisotropic MR sensor and is easier to fabricate.

摘要翻译： 本发明是将自旋阀MR传感器与间隔开的磁轭部分电连接的磁轭自旋阀MR读头。 第一和第二轭片在头表面处电连接并且在远离头表面的后间隙处彼此绝缘。 第一轭片具有将其分成彼此间隔开的第一和第二部分的断裂。 自旋阀MR传感器位于该断裂之内并电互连第一轭片的第一和第二部分。 第一和第二引线分别连接到第一和第二磁轭，并且从电流源接收电流，用于经由第一和第二磁轭将感测电流施加到自旋阀MR传感器。 当磁性介质在读头的头表面附近移动时，轭件用作用于将感应电流传递到自旋阀MR传感器以及用作磁通引导件的导体。 通过轭从磁介质传播到自旋阀MR传感器的磁通入侵引起与被信号处理装置处理的信号相对应的钉扎层和自由层的磁矩方向之间的相对旋转。 轭自旋阀MR传感器的信号强度优于各向异性MR传感器，并且制造更容易。

公开(公告)号：US20080030359A1

公开(公告)日：2008-02-07

申请号：US11757757

申请日：2007-06-04

申请人： Curt Smith ,  Steve Poirot ,  Robert Fontana

发明人： Curt Smith ,  Steve Poirot ,  Robert Fontana

IPC分类号： G08B21/00

CPC分类号： G07C9/00111 ,  G01S5/14 ,  G01S13/767 ,  G07C9/00 ,  G08B13/2462 ,  G08B21/22

摘要： A method for accounting for individuals in an emergency at industrial facilities utilizing Ultra-Wideband (UWB) transmitters associated with individuals or objects and UWB monitoring stations. Identification information received from the UWB transmitters by UWB monitoring stations are communicated along with time of arrival information to a computer which calculates the location of the UWB transmitter. The system can be used despite severe multi-path effects and can provide location information in 3 dimensions. The system can optionally include proximity-based RF equipment for access control or otherwise for identification in specific locations. Information from the proximity-based RF equipment is also sent to the computer which also receives information from the UWB monitoring stations.

摘要翻译： 在利用与个人或物体相关联的超宽带（UWB）发射机和UWB监测站的工业设施的紧急情况下对个人进行会计的方法。 由UWB监控站从UWB发射机接收的识别信息与到达时间信息一起传送到计算UWB发射机位置的计算机。 尽管严重的多路径效应，系统也可以使用，并且可以在三维空间中提供位置信息。 该系统可以可选地包括用于访问控制的基于邻近的RF设备或用于在特定位置识别的基于RF的RF设备。 来自接近性RF设备的信息也被发送到也从UWB监控站接收信息的计算机。

公开(公告)号：US20060152859A1

公开(公告)日：2006-07-13

申请号：US11032598

申请日：2005-01-10

申请人： Jeffrey Childress ,  Robert Fontana ,  Jeffrey Lille

发明人： Jeffrey Childress ,  Robert Fontana ,  Jeffrey Lille

IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/147 ,  H01L29/82 ,  H01L43/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01L29/66984 ,  H01L43/08

摘要： A three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. An air bearing surface (ABS) sensing plane of the TTM is defined along sides of the base region, the collector region, and the emitter region. The base region includes a free layer structure, a pinned layer structure, a first non-magnetic spacer layer formed between the free layer structure and the pinned layer structure, an in-stack longitudinal biasing layer (LBL) structure which magnetically biases the free layer structure, and a second non-magnetic spacer layer formed between the free layer structure and the in-stack longitudinal biasing layer structure. In one variation, the layers in the base region are inverted. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

摘要翻译： 适用于磁头的三端磁传感器（TTM）具有基极区域，集电极区域和发射极区域。 第一阻挡层位于发射极区域和基极区域之间，第二阻挡层位于集电极区域和基极区域之间。 TTM的空气轴承表面（ABS）感测平面沿着基极区域，集电极区域和发射极区域的侧面被限定。 基极区域包括自由层结构，钉扎层结构，形成在自由层结构和被钉扎层结构之间的第一非磁性间隔层，叠层纵向偏置层（LBL）结构，其磁性地偏置自由层 结构，以及形成在自由层结构和叠层间纵向偏置层结构之间的第二非磁性间隔层。 在一个变型中，基区中的层被倒置。 TTM可以包括自旋阀晶体管（SVT），磁隧道晶体管（MTT）或双结结构。

公开(公告)号：US20060124978A1

公开(公告)日：2006-06-15

申请号：US11340263

申请日：2006-01-25

申请人： Robert Fontana ,  Jaffrey Lille

发明人： Robert Fontana ,  Jaffrey Lille

IPC分类号： G11B5/33 ,  H01L29/94 ,  H01L43/00 ,  H01L29/76 ,  G11B5/127 ,  H01L29/82 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01F41/302 ,  H01F41/325 ,  H01L29/66984 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.

公开(公告)号：US20050024774A1

公开(公告)日：2005-02-03

申请号：US10631885

申请日：2003-07-30

申请人： Robert Fontana ,  Jeffrey Lille

发明人： Robert Fontana ,  Jeffrey Lille

IPC分类号： G11B5/127

CPC分类号： G11B5/127 ,  Y10T29/49032 ,  Y10T29/49082 ,  Y10T29/49083

摘要： A magnetic head including a media heating device. Following the fabrication of the heating device, a sacrificial layer of material is deposited to protect the heating device during subsequent process steps. Thereafter, write head components, such as write head induction coils and/or a P1 pole pedestal are fabricated above the heating device, and the sacrificial layer is substantially consumed in protecting the heating device during the aggressive etching and milling steps used to create those components. Further components, including a second magnetic pole are thereafter fabricated to complete the fabrication of the write head portion of the magnetic head. The sacrificial layer may be comprised of alumina, or a material such as NiFe that can act as a seed layer for a subsequent head components such as the P1 pole pedestal.

摘要翻译： 一种包括介质加热装置的磁头。 在加热装置的制造之后，沉积牺牲层材料以在随后的工艺步骤中保护加热装置。 此后，在加热装置之上制造诸如写头感应线圈和/或P1极基座的写头部件，并且在用于产生这些部件的腐蚀性蚀刻和铣削步骤期间，牺牲层基本上被消耗以保护加热装置 。 此后，制造包括第二磁极的其它部件以完成磁头的写入头部的制造。 牺牲层可以由氧化铝或诸如NiFe的材料组成，其可以用作后续头部部件如P1极基座的种子层。