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公开(公告)号：US07203036B2
公开(公告)日：2007-04-10
申请号：US10909122
申请日：2004-07-30
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095
摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.
摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。
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![Narrow track extraordinary magneto resistive [EMR] device](/abs-image/US/2007/11/13/US07295406B2/abs.jpg.150x150.jpg)
公开(公告)号：US07295406B2
公开(公告)日：2007-11-13
申请号：US10897454
申请日：2004-07-22
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.
摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。
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公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。
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4.发明授权Slider with integrated writer and semiconductor heterostucture read sensor 有权具有集成写入器和半导体异构结构读取传感器的滑块公开(公告)号：US08107197B2
公开(公告)日：2012-01-31
申请号：US12345812
申请日：2008-12-30
IPC分类号： G11B15/64
CPC分类号： G11B5/6005 , G11B5/3993
摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.
摘要翻译： 一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。
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公开(公告)号：US07633718B2
公开(公告)日：2009-12-15
申请号：US11168070
申请日：2005-06-27
摘要： EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.
摘要翻译： 公开了EMR元件和制造EMR元件的方法。 EMR结构包括形成有源区的一个或多个层，例如二维电子气（2DEG）。 EMR结构具有第一侧表面，具有从EMR结构的主体向外延伸的多个引线突起和相对的第二侧表面。 引线突起用于形成EMR元件的电流和电压引线。 有源区域延伸穿过每个引线突起，并且可沿着每个引线突起的周边被接近。 沿着每个引线突起的周边形成导电材料，并沿周边与EMR结构的有源区接触。 引线突起和与每个引线突起的有源区接触的相应的导电材料形成用于EMR元件的引线，例如电流引线和电压引线。
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公开(公告)号：US07615771B2
公开(公告)日：2009-11-10
申请号：US11380498
申请日：2006-04-27
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。
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7.发明授权Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 失效具有用于激活和去激活静电放电防止电路的结构的磁阻传感器公开(公告)号：US08169751B2
公开(公告)日：2012-05-01
申请号：US11426908
申请日：2006-06-27
申请人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
发明人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
CPC分类号： G11B5/40
摘要： A structure for preventing Electrostatic Discharge (LSD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes to solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
摘要翻译： 用于在制造期间防止静电放电（LSD）损坏磁阻传感器的结构。 该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。 该开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。 当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。
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公开(公告)号：US08102236B1
公开(公告)日：2012-01-24
申请号：US12968118
申请日：2010-12-14
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F3/14
摘要： A thin film inductor according to one embodiment includes one or more arms; one or more conductors passing through each arm; a first ferromagnetic yoke wrapping partially around the one or more conductors in a first of the one or more arms, the first ferromagnetic yoke comprising a magnetic top section, a magnetic bottom section, and via regions positioned on opposites sides of the one or more conductors in the first of the one or more arms, wherein the magnetic top section and magnetic bottom section are coupled together through a low reluctance path in the via regions; and one or more non-magnetic gaps between the top section and the bottom section in at least one of the via regions. Additional systems and methods are also provided.
摘要翻译： 根据一个实施例的薄膜电感器包括一个或多个臂; 穿过每个臂的一个或多个导体; 所述第一铁磁磁轭围绕所述一个或多个臂中的第一个中的所述一个或多个导体包围，所述第一铁磁轭包括磁性顶部，磁性底部部分和位于所述一个或多个导体的相对侧上的通孔区域 在一个或多个臂中的第一个中，其中磁性顶部部分和磁性底部部分通过通孔区域中的低磁阻路径耦合在一起; 以及在至少一个通孔区域中的顶部和底部之间的一个或多个非磁性间隙。 还提供了附加的系统和方法。
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9.发明授权Distributed shunt structure for lapping of current perpendicular plane (CPP) heads 有权分布式分流结构，用于研磨电流垂直平面（CPP）头公开(公告)号：US08070554B2
公开(公告)日：2011-12-06
申请号：US10990926
申请日：2004-11-17
IPC分类号： B24B49/00
CPC分类号： G11B5/3163 , G11B5/3166 , G11B5/3169 , G11B5/332 , G11B5/3906 , G11B5/40
摘要： An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.
摘要翻译： 描述了用于研磨和制造读/写头的装置和方法。 研磨方法包括对其中制造读/写头的结构执行第一研磨处理。 第一次研磨工艺用于减少第一电阻区域。 第一电阻区域位于结构的表面附近。 第一个研磨过程是实现第一次研磨基准。 研磨方法还包括在第二电阻区域上进行第二研磨处理。 第二次研磨过程以比第一次研磨过程低的速度进行。 第二次研磨过程是实现第二次研磨基准。 第二电阻区域介于第一电阻区域和读/写头之间。 第二电阻区域具有与第二电阻区域不同的电阻值。
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公开(公告)号：US20080151596A1
公开(公告)日：2008-06-26
申请号：US11615618
申请日：2006-12-22
IPC分类号： G11C11/063 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
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