公开(公告)号：US07203036B2

公开(公告)日：2007-04-10

申请号：US10909122

申请日：2004-07-30

申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

IPC分类号： G11B5/39 ,  G01R33/02 ,  G01R27/08

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

公开(公告)号：US07295406B2

公开(公告)日：2007-11-13

申请号：US10897454

申请日：2004-07-22

申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

IPC分类号： G11B5/39

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.

摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

公开(公告)号：US07440227B2

公开(公告)日：2008-10-21

申请号：US11069414

申请日：2005-02-28

申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

IPC分类号： G11B5/37

CPC分类号： G11B5/376

摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便从磁记录钻头暴露于基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。

公开(公告)号：US20100165511A1

公开(公告)日：2010-07-01

申请号：US12345812

申请日：2008-12-30

申请人： Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B5/60

CPC分类号： G11B5/6005 ,  G11B5/3993

摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.

摘要翻译： 一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。

公开(公告)号：US08107197B2

公开(公告)日：2012-01-31

申请号：US12345812

申请日：2008-12-30

申请人： Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B15/64

CPC分类号： G11B5/6005 ,  G11B5/3993

摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.

摘要翻译： 一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。

公开(公告)号：US09305571B2

公开(公告)日：2016-04-05

申请号：US12646851

申请日：2009-12-23

申请人： Bruce A. Gurney ,  Ernesto E. Marinero ,  Simone Pisana

发明人： Bruce A. Gurney ,  Ernesto E. Marinero ,  Simone Pisana

IPC分类号： G11B5/72 ,  G11B5/31 ,  G11B5/84 ,  G11B5/10

CPC分类号： G11B5/3106 ,  G11B5/102 ,  G11B5/72 ,  G11B5/8408

摘要： A magnetic disk according to one embodiment includes a recording layer; and a layer of graphene formed above the recording layer. A nucleation layer may be formed between the recording layer and the graphene layer in some approaches. A magnetic device according to another embodiment includes a transducer; a nucleation layer formed above the transducer; and a layer of graphene formed on the nucleation layer. A method according to one embodiment includes forming a nucleation layer above a magnetic layer of a magnetic disk or magnetic device; and forming a layer of graphene on the nucleation layer. A method according to another embodiment includes depositing SiC above a magnetic layer of a magnetic disk or magnetic device, the SiC being equivalent to several monolayers thick; and surface heating the SiC to selectively evaporate some of the Si from the SiC for forming a layer of graphene on a SiC layer. Additional products and methods are also presented.

摘要翻译： 根据一个实施例的磁盘包括记录层; 以及形成在记录层上方的一层石墨烯。 在一些方法中，可以在记录层和石墨烯层之间形成成核层。 根据另一实施例的磁性装置包括换能器; 形成在换能器上方的成核层; 并在成核层上形成一层石墨烯。 根据一个实施方案的方法包括在磁盘或磁性装置的磁性层上形成成核层; 并在成核层上形成一层石墨烯。 根据另一实施例的方法包括在磁盘或磁性装置的磁性层上沉积SiC，所述SiC相当于多个单层厚度; 并表面加热SiC以选择性地从SiC中蒸发出一些Si，以在SiC层上形成一层石墨烯。 还介绍了其他产品和方法。

公开(公告)号：US20110151278A1

公开(公告)日：2011-06-23

申请号：US12646851

申请日：2009-12-23

申请人： Bruce A. Gurney ,  Ernesto E. Marinero ,  Simone Pisana

发明人： Bruce A. Gurney ,  Ernesto E. Marinero ,  Simone Pisana

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G11B5/3106 ,  G11B5/102 ,  G11B5/72 ,  G11B5/8408

摘要： A magnetic disk according to one embodiment includes a recording layer; and a layer of graphene formed above the recording layer. A nucleation layer may be formed between the recording layer and the graphene layer in some approaches. A magnetic device according to another embodiment includes a transducer; a nucleation layer formed above the transducer; and a layer of graphene formed on the nucleation layer. A method according to one embodiment includes forming a nucleation layer above a magnetic layer of a magnetic disk or magnetic device; and forming a layer of graphene on the nucleation layer. A method according to another embodiment includes depositing SiC above a magnetic layer of a magnetic disk or magnetic device, the SiC being equivalent to several monolayers thick; and surface heating the SiC to selectively evaporate some of the Si from the SiC for forming a layer of graphene on a SiC layer. Additional products and methods are also presented.

摘要翻译： 根据一个实施例的磁盘包括记录层; 以及形成在记录层上方的一层石墨烯。 在一些方法中，可以在记录层和石墨烯层之间形成成核层。 根据另一实施例的磁性装置包括换能器; 形成在换能器上方的成核层; 并在成核层上形成一层石墨烯。 根据一个实施方案的方法包括在磁盘或磁性装置的磁性层上形成成核层; 并在成核层上形成一层石墨烯。 根据另一实施例的方法包括在磁盘或磁性装置的磁性层上沉积SiC，所述SiC相当于多个单层厚度; 并表面加热SiC以选择性地从SiC中蒸发出一些Si，以在SiC层上形成一层石墨烯。 还介绍了其他产品和方法。

公开(公告)号：US08587897B2

公开(公告)日：2013-11-19

申请号：US12565555

申请日：2009-09-23

申请人： Aleksey Andreev ,  David Williams ,  Ernesto E. Marinero ,  Bruce A. Gurney ,  Thomas D. Boone, Jr.

发明人： Aleksey Andreev ,  David Williams ,  Ernesto E. Marinero ,  Bruce A. Gurney ,  Thomas D. Boone, Jr.

IPC分类号： G11B5/37

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095

摘要： A device for sensing a magnetic field is described. The device comprises first, second and third leads and a junction between the leads. The junction and leads are arranged in a plane and the junction is configured to exhibit quantum confinement in a direction perpendicular to the plane. The first lead is arranged on one side of the junction and the second and third leads are arranged on an opposite side of the junction. The first lead is configured to limit angle of spread of charge carriers entering the junction so that, when charge carriers flow into the junction from the first lead, the charge carriers form a substantially nondivergent beam.

摘要翻译： 描述用于感测磁场的装置。 该装置包括第一，第二和第三引线以及引线之间的连接点。 结和引线布置在平面中，并且结被配置为在垂直于平面的方向上展示量子限制。 第一引线布置在接头的一侧，第二和第三引线布置在接头的相对侧上。 第一引线被配置为限制进入结的电荷载体的扩展角，使得当电荷载流子从第一引线流入结时，电荷载体形成基本上非发散的束。

公开(公告)号：US07502206B2

公开(公告)日：2009-03-10

申请号：US11492375

申请日：2006-07-24

申请人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

发明人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.

摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。

公开(公告)号：US08618587B2

公开(公告)日：2013-12-31

申请号：US13532679

申请日：2012-06-25

申请人： Ernesto E. Marinero ,  Simone Pisana

发明人： Ernesto E. Marinero ,  Simone Pisana

IPC分类号： H01L29/76

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/775 ,  H01L29/7781 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/734 ,  Y10S977/738

摘要： An electronic device employing a graphene layer as a charge carrier layer. The graphene layer is sandwiched between layers that are constructed of a material having a highly ordered crystalline structure and a high dielectric constant. The highly ordered crystalline structure of the layers surrounding the graphene layer has low density of charged defects that can lead to scattering of charge carriers in the graphene layer. The high dielectric constant of the layers surrounding the graphene layer also prevents charge carrier scattering by minimizing interaction between the charge carriers and the changed defects in the surrounding layers. An interracial layer constructed of a thin, non-polar, dielectric material can also be provided between the graphene layer and each of the highly ordered crystalline high dielectric constant layers to minimize charge carrier scattering in the graphene layer through remote interfacial phonons.

摘要翻译： 一种使用石墨烯层作为电荷载体层的电子器件。 石墨烯层夹在由具有高度有序晶体结构和高介电常数的材料构成的层之间。 围绕石墨烯层的层的高度有序的结晶结构具有低的带电缺陷密度，这可导致石墨烯层中的载流子的散射。 围绕石墨烯层的层的高介电常数也通过最小化电荷载体和周围层中改变的缺陷之间的相互作用来防止电荷载体的散射。 也可以在石墨烯层和每个高阶结晶高介电常数层之间提供由薄的非极性介电材料构成的界面层，以通过远程界面声子最小化石墨烯层中的载流子散射。