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    Planar extraordinary magnetoresistance sensor
    2.
    发明申请
    Planar extraordinary magnetoresistance sensor 有权
    平面非凡磁阻传感器

    公开(公告)号：US20060022672A1

    公开(公告)日：2006-02-02

    申请号：US10909122

    申请日：2004-07-30

    申请人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

    发明人： Amitava Chattopadhyay ,  Robert Fontana ,  Bruce Gurney ,  Stefan Maat ,  Ernesto Marinero

    IPC分类号： G01R33/02

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

    摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

    摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

    Magnetic head having a hall effect sensor
    3.
    发明申请
    Magnetic head having a hall effect sensor 失效
    磁头具有霍尔效应传感器

    公开(公告)号：US20060193080A1

    公开(公告)日：2006-08-31

    申请号：US11069414

    申请日：2005-02-28

    申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto Marinero ,  Bruce Gurney

    发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto Marinero ,  Bruce Gurney

    IPC分类号： G11B5/37

    CPC分类号： G11B5/376

    摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

    摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便暴露于与磁记录位基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。

    Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media
    4.
    发明授权
    Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media 失效
    具有霍尔效应传感器的磁头和用于检测来自磁记录介质的记录位的电路

    公开(公告)号：US07440227B2

    公开(公告)日：2008-10-21

    申请号：US11069414

    申请日：2005-02-28

    申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

    发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

    IPC分类号： G11B5/37

    CPC分类号： G11B5/376

    摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

    摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便从磁记录钻头暴露于基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。

    Planar extraordinary magnetoresistance sensor
    6.
    发明授权
    Planar extraordinary magnetoresistance sensor 有权
    平面非凡磁阻传感器

    公开(公告)号：US07203036B2

    公开(公告)日：2007-04-10

    申请号：US10909122

    申请日：2004-07-30

    申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

    发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

    IPC分类号： G11B5/39 ,  G01R33/02 ,  G01R27/08

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

    摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

    摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

    Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
    8.
    发明申请
    Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 审中-公开
    用于交换耦合磁性结构的稳定性增强型底层，磁阻传感器和磁盘驱动系统

    公开(公告)号：US20050036244A1

    公开(公告)日：2005-02-17

    申请号：US10951397

    申请日：2004-09-27

    申请人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

    发明人： Matthew Carey ,  Eric Fullerton ,  Bruce Gurney ,  Thai Le ,  Stefan Maat ,  Philip Rice

    IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3277

    摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

    摘要翻译： 交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。 氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。 底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。 结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。 交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。 由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。