公开(公告)号：US11018107B2

公开(公告)日：2021-05-25

申请号：US16416756

申请日：2019-05-20

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Jae Hun Bae ,  Won Chul Do ,  Min Yoo ,  Young Rae Kim ,  Min Hwa Chang ,  Dong Hyun Kim ,  Ah Ra Jo ,  Seok Geun Ahn

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H01L25/00 ,  H01L23/538 ,  H01L21/683

摘要： A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

公开(公告)号：US12033970B2

公开(公告)日：2024-07-09

申请号：US17328766

申请日：2021-05-24

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Jae Hun Bae ,  Won Chul Do ,  Min Yoo ,  Young Rae Kim ,  Min Hwa Chang ,  Dong Hyun Kim ,  Ah Ra Jo ,  Seok Geun Ahn

IPC分类号： H01L23/00 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/20 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/5383 ,  H01L24/14 ,  H01L24/17 ,  H01L24/19 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L23/3128 ,  H01L23/538 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/13082 ,  H01L2224/13101 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2924/15311 ,  H01L2224/13101 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014

摘要： A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

公开(公告)号：US20210398930A1

公开(公告)日：2021-12-23

申请号：US17328766

申请日：2021-05-24

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Jae Hun Bae ,  Won Chul Do ,  Min Yoo ,  Young Rae Kim ,  Min Hwa Chang ,  Dong Hyun Kim ,  Ah Ra Jo ,  Seok Geun Ahn

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H01L25/00 ,  H01L23/538 ,  H01L21/683

摘要： A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.