公开(公告)号：US08637410B2

公开(公告)日：2014-01-28

申请号：US13082968

申请日：2011-04-08

申请人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

发明人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

IPC分类号： H01L21/31

CPC分类号： C23C16/08 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.

摘要翻译： 提供了使用CVD和ALD技术形成和处理纯金属层的方法。 在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。 在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。 还提供了防止氢等离子体渗透金属前体层的方法。

公开(公告)号：US20120258602A1

公开(公告)日：2012-10-11

申请号：US13082968

申请日：2011-04-08

申请人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

发明人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

IPC分类号： H01L21/31

CPC分类号： C23C16/08 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.

摘要翻译： 提供了使用CVD和ALD技术形成和处理纯金属层的方法。 在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。 在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。 还提供了防止氢等离子体渗透金属前体层的方法。

公开(公告)号：US6057244A

公开(公告)日：2000-05-02

申请号：US126886

申请日：1998-07-31

申请人： Gilbert Hausmann ,  Vijay Parkhe ,  Chia-Ao Lu ,  Michael S. Jackson

发明人： Gilbert Hausmann ,  Vijay Parkhe ,  Chia-Ao Lu ,  Michael S. Jackson

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/68

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32137

摘要： Method for processing a semiconductor substrate in a chamber comprising the steps of establishing preprocess conditions in the chamber, executing a two-step plasma ignition, processing the substrate, executing a two-step plasma power down and executing a two-step substrate dechuck. A "softer" ignition of a plasma in two steps reduces DC bias spikes on the substrate. Reducing DC bias spikes reduces processing anomalies such as excess charge retention in the wafer after removing the chucking voltage and wafer repulsion and plasma discontinuity during processing. Additionally, the plasma ramp down after processing allows adequate time for discharging of residual charges in the wafer which allows for more reliable removal of the substrate from the chamber (dechucking).

摘要翻译： 用于处理室内的半导体衬底的方法，包括以下步骤：在腔室中建立预处理条件，执行两步等离子体点火，处理衬底，执行两级等离子体功率下降并执行两步衬底取样。 两步骤中等离子体的“较软”点火降低了基板上的DC偏压尖峰。 减少直流偏置尖峰减少处理异常，例如在处理之后去除夹持电压和晶片排斥和等离子体不连续之后在晶片中过量的电荷保留。 此外，处理之后的等离子体斜坡下降允许足够的时间来排出晶片中的残余电荷，这允许更可靠地从腔室去除衬底（脱帽）。

公开(公告)号：US07705275B2

公开(公告)日：2010-04-27

申请号：US11506460

申请日：2006-08-17

申请人： Salvador P. Umotoy ,  Lawrence Chung-Lai Lei ,  Gwo-chun Tzu ,  Xiangxiong (John) Yuan ,  Michael S. Jackson ,  Hymam Lam

发明人： Salvador P. Umotoy ,  Lawrence Chung-Lai Lei ,  Gwo-chun Tzu ,  Xiangxiong (John) Yuan ,  Michael S. Jackson ,  Hymam Lam

IPC分类号： A21B1/22

CPC分类号： H01L21/67103 ,  C23C16/45521 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785

摘要： A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.

摘要翻译： 衬底支撑件包括钎焊在一起的顶板，中板和底板。 顶板具有顶表面，多个向外突出的台面分散在凹槽中，凹槽网络，终止于凹槽中的真空端口以及多个气体端口。 中间板具有与顶板的相应的顶部馈通对准的多个中间馈通，并且底板具有与中间板的中间馈通对准的多个底部馈通。 顶板和中间板通过第一钎焊接合层连接，中间和底板通过第二钎焊接合层连接。