公开(公告)号：US5982099A

公开(公告)日：1999-11-09

申请号：US624124

申请日：1996-03-29

申请人： Michael S. Barnes ,  Brett Richardson ,  Tuan Ngo ,  John Patrick Holland

发明人： Michael S. Barnes ,  Brett Richardson ,  Tuan Ngo ,  John Patrick Holland

IPC分类号： H05H1/36 ,  H05H1/24

CPC分类号： H05H1/36

摘要： A gas in a vacuum plasma processing chamber is ignited to a plasma by subjecting the gas to an r.f. field derived from an r.f. source having a frequency and power level sufficient to ignite the gas into the plasma and to maintain the plasma. The r.f. field is supplied to the gas by a reactive impedance element connected via a matching network to the r.f. source. The matching network includes first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The value of only one of the reactances is varied until a local maximum of a function of power coupled between the source and the load is reached. The value of only the other reactance is varied until a local maximum of the function is reached. The two varying steps are then repeated as necessary.

摘要翻译： 真空等离子体处理室中的气体通过使气体经受r.f.而点燃到等离子体。 来自r.f.的字段 源具有足以将气体点燃到等离子体中并维持等离子体的频率和功率水平。 r.f. 场由通过匹配网络连接到r.f的无功阻抗元件提供给气体。 资源。 匹配网络包括第一和第二可变电抗，其控制源的负载并且将包括无功阻抗元件和等离子体的负载调谐到源。 只有一个电抗的值是变化的，直到达到源和负载之间的功率函数的局部最大值。 只有其他电抗的值才会变化，直到达到功能的局部最大值。 然后根据需要重复两个可变步骤。

公开(公告)号：US5689215A

公开(公告)日：1997-11-18

申请号：US652037

申请日：1996-05-23

申请人： Brett Richardson ,  Tuan Ngo ,  Michael S. Barnes

发明人： Brett Richardson ,  Tuan Ngo ,  Michael S. Barnes

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H03H7/40

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H03H7/40

摘要： An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.

摘要翻译： 一个r.f. 场由无功阻抗元件提供给真空等离子体处理室中的等离子体。 元件和源通过匹配网络连接，该匹配网络包括控制源的负载并将负载（包括无功阻抗元件和等离子体）调谐到源的第一和第二可变电抗。 改变第一和第二可变电抗的值，以确定第二可变电抗的每个单位变化的第一可变电抗量的变化量，以获得看见和看出r.f的输出端之间的阻抗之间的最佳匹配。 资源。 然后，基于确定，第一和第二可变电抗的值同时变化，直到看到的进入和退出r.f的输出端之间的阻抗之间的最佳阻抗匹配。 来源达到。

公开(公告)号：US09165587B2

公开(公告)日：2015-10-20

申请号：US12329457

申请日：2008-12-05

申请人： Michael S. Barnes ,  Terry Bluck

发明人： Michael S. Barnes ,  Terry Bluck

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  G11B5/84 ,  G11B5/855 ,  H01J37/34

CPC分类号： G11B5/84 ,  G11B5/855 ,  H01J37/3438

摘要： A system is provided for etching patterned media disks. A movable electrode is utilized to perform sputter etch. The electrode moves to near or at slight contact to the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.

摘要翻译： 提供用于蚀刻图案化介质盘的系统。 利用可动电极进行溅射蚀刻。 电极移动到接近或稍微接触到衬底，以将RF能量耦合到盘。 待蚀刻的材料可以是金属，例如Co / Pt / Cr或类似的金属。 衬底垂直地保持在载体中，并且两侧被连续蚀刻。 也就是说，在一个室中蚀刻一面，然后在下一个室中蚀刻第二面。 隔离阀设置在两个腔室之间，圆盘托架使腔室间移动。 载体可以是线性驱动载体，使用例如磁化轮和线性马达。

公开(公告)号：US08715515B2

公开(公告)日：2014-05-06

申请号：US12730147

申请日：2010-03-23

申请人： Houng T. Nguyen ,  Ren Xu ,  Michael S. Barnes

发明人： Houng T. Nguyen ,  Ren Xu ,  Michael S. Barnes

IPC分类号： B44C1/22

CPC分类号： G11B5/855

摘要： A sequence of process steps having balanced process times are implemented in sequence of etch chambers coupled linearly and isolated one from the other, resulting in the optimization of island to trench ratio for a patterned media. A biased chemical etching using active etching gas is used to descum and trim the resist patterns. An inert gas sputter etch is performed on the magnetic layers, resulting in the patterned magnetic layer on the disk. A final step of stripping is then performed to remove the residual capping resist and carbon hard mask on top of un-etched magnetic islands. The effective magnetic material remaining on the disk surface can be optimized by adjusting the conditions of chemical etch and sputter etch conditions. Relevant process conditions that may be adjusted include: pressure, bias, time, and the type of gas in each step.

摘要翻译： 具有平衡处理时间的一系列工艺步骤以蚀刻室的顺序实现，该蚀刻室线性地并且彼此隔离，导致图案化介质的岛与沟槽比的优化。 使用有源蚀刻气体的偏压化学蚀刻来除去和修整抗蚀剂图案。 对磁性层进行惰性气体溅射蚀刻，得到盘上图案化的磁性层。 然后进行剥离的最后一步，以除去未蚀刻的磁岛顶部上的残余覆盖抗蚀剂和碳硬掩模。 可以通过调整化学蚀刻和溅射蚀刻条件的条件来优化残留在盘表面上的有效磁性材料。 可能调整的相关工艺条件包括：压力，偏压，时间和每一步中的气体类型。

公开(公告)号：US08349196B2

公开(公告)日：2013-01-08

申请号：US12329462

申请日：2008-12-05

申请人： Kevin P. Fairbairn ,  Michael S. Barnes ,  Terry Bluck ,  Ren Xu ,  Charles Liu ,  Ralph Kerns

发明人： Kevin P. Fairbairn ,  Michael S. Barnes ,  Terry Bluck ,  Ren Xu ,  Charles Liu ,  Ralph Kerns

IPC分类号： B44C1/22

CPC分类号： G11B5/84 ,  G11B5/855 ,  H01J37/3438

摘要： A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.

摘要翻译： 提供了用于蚀刻用于硬盘驱动器的图案化介质盘的系统。 模块化系统可以被定制以执行特定的处理顺序，使得图案化的介质盘被制造而不从真空环境中移除盘。 在一些顺序中，磁性堆叠被蚀刻，而另一些蚀刻则在形成磁性堆叠之前进行。 在另外的序列中，使用离子注入而没有蚀刻步骤。 为了蚀刻可移动的非接触电极用于进行溅射蚀刻。 阴极移动到与衬底接近但不接触的接近距离，以将RF能量耦合到盘。 衬底垂直地保持在载体中，并且两侧被连续蚀刻。 也就是说，在一个室中蚀刻一面，然后在下一个室中蚀刻第二面。

公开(公告)号：US20090159104A1

公开(公告)日：2009-06-25

申请号：US11960442

申请日：2007-12-19

申请人： Judy Huang ,  Michael S. Barnes ,  Terry Bluck

发明人： Judy Huang ,  Michael S. Barnes ,  Terry Bluck

IPC分类号： B08B6/00 ,  B08B13/00

CPC分类号： C23C16/4405 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32862

摘要： A substrate processing chamber for processing substrates such as semiconductor wafers, flat panel substrate, solar panels, etc., includes mechanism for in-situ plasma clean. The chamber body has at least one plasma source opening provided on its sidewall. A movable substrate holder is situated within the chamber body, the substrate holder assumes a first position wherein the substrate is positioned below the plasma source opening for in-situ plasma cleaning of the chamber, and a second position wherein the substrate is positioned above the plasma source opening for substrate processing. A plasma energy source is coupled to the plasma source opening.

摘要翻译： 用于处理诸如半导体晶片，平板基板，太阳能电池板等基板的基板处理室包括用于原位等离子体清洗的机构。 腔体具有设置在其侧壁上的至少一个等离子体源开口。 可移动衬底保持器位于腔室主体内，衬底保持器采取第一位置，其中衬底位于等离子体源开口下方用于腔室的原位等离子体清洗，以及第二位置，其中衬底位于等离子体的上方 源开口用于基板处理。 等离子体能源耦合到等离子体源开口。

公开(公告)号：US20090151872A1

公开(公告)日：2009-06-18

申请号：US11958235

申请日：2007-12-17

申请人： Tugrul Samir ,  Michael S. Barnes ,  Terry Bluck

发明人： Tugrul Samir ,  Michael S. Barnes ,  Terry Bluck

IPC分类号： H01B13/00 ,  B23P17/04 ,  C23C16/54

CPC分类号： H01L21/67017 ,  H01L21/6719 ,  Y10T29/49

摘要： A process chamber having high conductance and a method of manufacturing the process chamber are disclosed. The process chamber is machined from a single piece of aluminum where a process cavity and a pump cavity are created by intersecting cylinders. A substrate opening is also created at a bottom of the process cavity to provide conduit for services, such as cooling gas and electrical connections. A large undercut area is formed at a top of the pump cavity between the pump cavity and the process cavity. The undercut extends past the process chamber centerline at the process cavity. A circular saw is used to remove material and create a plenum which extends beyond the process cavity centerline.

摘要翻译： 公开了具有高电导性的处理室和制造处理室的方法。 处理室由单片铝加工，其中通过相交的圆柱体形成工艺腔和泵腔。 在工艺空腔的底部还形成衬底开口，以提供诸如冷却气体和电气连接等服务的导管。 在泵腔和处理腔之间的泵腔的顶部形成有大的底切区域。 底切延伸经过过程腔中心线。 使用圆锯去除材料并形成延伸超过工艺腔中心线的气室。

公开(公告)号：US20080066678A1

公开(公告)日：2008-03-20

申请号：US11523101

申请日：2006-09-19

申请人： Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

发明人： Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

IPC分类号： C23C16/00

CPC分类号： H01L21/67184 ,  H01L21/67173 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745

摘要： There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.

摘要翻译： 描述了与目前使用的系统相比，用于运输和处理包括晶片的基板以便以合理的成本有效地生产提高的生产量的装置和方法。 关键要素是沿着处理室的侧面使用传送室，用于通过装载锁定将基板输送到受控气氛中，然后沿着传送室作为到达处理室的方式，然后在受控气氛中进行处理 处理室。

公开(公告)号：US06849151B2

公开(公告)日：2005-02-01

申请号：US10215065

申请日：2002-08-07

申请人： Michael S. Barnes ,  John P. Holland ,  David S. L. Mui ,  Wei Liu

发明人： Michael S. Barnes ,  John P. Holland ,  David S. L. Mui ,  Wei Liu

IPC分类号： C23C14/54 ,  C23C16/52 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  H01J37/32 ,  H05H1/00 ,  C23C16/00 ,  H01L21/00

CPC分类号： H01J37/321 ,  C23C14/547 ,  C23C16/52 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  H01J37/32935

摘要： A substrate is placed in a process zone and an energized process gas is maintained in the process zone to process the substrate. A light beam is reflectively diffracted from a pattern of features of the substrate being processed, the reflected beam is monitored, and a signal is generated in relation to the monitored beam. During processing, a width of the features of the substrate can change. The generated signal is evaluated to detect the occurrence of a change in the width of the features.

摘要翻译： 将基底放置在处理区中，并且在处理区中保持通电的工艺气体以处理衬底。 光束从被处理的衬底的特征的图案反射衍射，监测反射光束，并且相对于被监视的光束产生信号。 在处理期间，衬底的特征的宽度可以改变。 评估产生的信号以检测特征宽度变化的发生。

公开(公告)号：US6027603A

公开(公告)日：2000-02-22

申请号：US980368

申请日：1997-11-28

申请人： John Patrick Holland ,  Michael S. Barnes

发明人： John Patrick Holland ,  Michael S. Barnes

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/321

摘要： A planar coil exciting a plasma of an r.f. vacuum plasma processor for a workpiece processed surface in a chamber includes plural turns. The coil, chamber and workpiece are arranged to produce in the chamber a magnetic flux having substantially greater density in peripheral portions of the coil and chamber than in a center portion of the chamber and coil so a substantially uniform plasma flux is incident on a processed surface of the workpiece.

摘要翻译： 激励r.f.等离子体的平面线圈 用于室内工件处理表面的真空等离子体处理器包括多匝。 线圈，腔室和工件被布置成在腔室中产生在线圈和腔室的周边部分中具有比在腔室和线圈的中心部分中具有显着更大密度的磁通量，使得基本上均匀的等离子体通量入射到加工表面 的工件。