摘要:
Signals propagating on an aggressor communication channel can cause detrimental interference in a victim communication channel. A signal processing circuit can generate an interference cancellation signal that, when applied to the victim communication channel, cancels the detrimental interference. The signal processing circuit can dynamically adjust or update two or more aspects of the interference cancellation signal, such as an amplitude or gain parameter and a phase or delay parameter. Via the dynamic adjustments, the signal processing circuit can adapt to changing conditions, thereby maintaining an acceptable level of interference cancellation in a fluctuating operating environment. A control circuit that implements the parametric adjustments can have at least two modes of operation, one for adjusting the amplitude parameter and one for adjusting the phase parameter. The modes can be selectable or can be intermittently available, for example.
摘要:
Signals propagating on an aggressor communication channel can cause detrimental interference in a victim communication channel. A signal processing circuit can generate an interference cancellation signal that, when applied to the victim communication channel, cancels the detrimental interference. The signal processing circuit can dynamically adjust or update two or more aspects of the interference cancellation signal, such as an amplitude or gain parameter and a phase or delay parameter. Via the dynamic adjustments, the signal processing circuit can adapt to changing conditions, thereby maintaining an acceptable level of interference cancellation in a fluctuating operating environment. A control circuit that implements the parametric adjustments can have at least two modes of operation, one for adjusting the amplitude parameter and one for adjusting the phase parameter. The modes can be selectable or can be intermittently available, for example.
摘要:
A circuit can process a sample of a signal to emulate, simulate, or model an effect on the signal. Thus, an emulation circuit can produce a representation of a real-world signal transformation by processing the signal according to one or more signal processing parameters that are characteristic of the real-world signal transformation. The emulation circuit can apply analog signal processing and/or mixed signal processing to the signal. The signal processing can comprise feeding the signal through two signal paths, each having a different delay, and creating a weighted sum of the outputs of the two signal paths. The signal processing can also (or alternatively) comprise routing the signal through a network of delay elements, wherein a bank of switching or routing elements determines the route and thus the resulting delay.
摘要:
A circuit can process a sample of a signal to emulate, simulate, or model an effect on the signal. Thus, an emulation circuit can produce a representation of a real-world signal transformation by processing the signal according to one or more signal processing parameters that are characteristic of the real-world signal transformation. The emulation circuit can apply analog signal processing and/or mixed signal processing to the signal. The signal processing can comprise feeding the signal through two signal paths, each having a different delay, and creating a weighted sum of the outputs of the two signal paths. The signal processing can also (or alternatively) comprise routing the signal through a network of delay elements, wherein a bank of switching or routing elements determines the route and thus the resulting delay.
摘要:
A circuit can process a sample of a signal to emulate, simulate, or model an effect on the signal. Thus, an emulation circuit can produce a representation of a real-world signal transformation by processing the signal according to one or more signal processing parameters that are characteristic of the real-world signal transformation. The emulation circuit can apply analog signal processing and/or mixed signal processing to the signal. The signal processing can comprise feeding the signal through two signal paths, each having a different delay, and creating a weighted sum of the outputs of the two signal paths. The signal processing can also (or alternatively) comprise routing the signal through a network of delay elements, wherein a bank of switching or routing elements determines the route and thus the resulting delay.
摘要:
A PIN diode attenuator and associated control circuits prevents self-biasing of bipolar device RF power amplifiers under large signal drive conditions. A power amplifier control signal controls the amount of current through the PIN diode attenuator. When the control signal is high for maximum output power, the PIN diode attenuator is turned off to obtain maximum drive level for the first RF stage. When the control signal is low for maximum isolation, the PIN diode attenuator is turned on to reduce the drive level and to avoid self-biasing. The PIN diode attenuator and associated control circuits allow the RF power amplifier to operate normally when the amplifier is in its forward gain mode. The RF input signals to the power amplifier are attenuated however, when the amplifier is turned off or in a transition state between the forward gain mode and the off mode, to ensure a high isolation state that prevents self-biasing of the power amplifier or portions thereof under large signal conditions.
摘要:
A solution of hydrogen peroxide [H.sub.2 O.sub.2 ], citric acid [HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O], and a salt of citric acid such as potassium citrate [HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O], and hydrogen peroxide [H.sub.2 O.sub.2 ], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y 0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.
摘要翻译:将过氧化氢[H 2 O 2],柠檬酸[HOC(CH 2 COOH)2 COOH·H 2 O]和柠檬酸盐如柠檬酸钾[HOC(CH 2 COOK)2 COOK.H 2 O]和过氧化氢[H 2 O 2] 适当的pH范围,在其他III-V族化合物的存在下选择性蚀刻含GaAs的III-V族化合物。 作为说明,当蚀刻剂溶液的pH范围在约3和6之间时,在Al x Ga 1-x As(0≤y<0.2> x> 0.2)的存在下,选择性地蚀刻Al y Ga 1-y As。本文所述的蚀刻剂溶液 可以用于制造例如表现出改进的饱和电流(Idss)和阈值电压(Vth)均匀性的高频晶体管。
摘要:
A solution of hydrogen peroxide �H.sub.2 O.sub.2 !, citric acid �HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O!, and a salt of citric acid such as potassium citrate �HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O!, and hydrogen peroxide �H.sub.2 O.sub.2 !, in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y 0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.
摘要翻译:将过氧化氢[H 2 O 2],柠檬酸[HOC(CH 2 COOH)2 COOH·H 2 O]和柠檬酸盐如柠檬酸钾[HOC(CH 2 COOK)2 COOK.H 2 O]和过氧化氢[H 2 O 2] 适当的pH范围,在其他III-V族化合物的存在下选择性蚀刻含GaAs的III-V族化合物。 作为说明,当蚀刻剂溶液的pH范围在约3和6之间时,在Al x Ga 1-x As(0≤y<0.2> x> 0.2)的存在下,选择性地蚀刻Al y Ga 1-y As。本文所述的蚀刻剂溶液 可以用于制造例如表现出改进的饱和电流(Idss)和阈值电压(Vth)均匀性的高频晶体管。