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公开(公告)号：US08069730B2
公开(公告)日：2011-12-06
申请号：US12291870
申请日：2008-11-14
IPC分类号： G01L9/06
CPC分类号： G01L1/18 , G01L19/003 , G01M9/06
摘要： A novel flexible transducer structure is suitable for attaching to curved surface such as the leading edge of an aircraft wing. The structure comprises a thin flexible sheet of an insulating material with a leadless transducer secured to the sheet. The sheet is then placed over the curved surface and assumes the curvature of the surface. The transducer secured to the sheet provides an output of pressure according the pressure exerted on the sheet. The sheet basically is fabricated from a thin material such as Kapton and is flexible so as to assume the curvature of the surface with the transducer being exposed to pressure applied to the curved surface. The sensor in conjunction with the flexible sheet allows pressure to be measured without disturbing the air flow patterns of the measuring surfaces and because of its construction, is moisture resistant over a large variety of atmospheric conditions.
摘要翻译： 一种新颖的柔性换能器结构适用于连接到诸如飞机机翼前缘的弯曲表面。 该结构包括具有固定到片材的无引导换能器的绝缘材料的薄柔性片。 然后将片材放置在弯曲表面上并呈现表面的曲率。 固定到片材上的传感器根据施加在片材上的压力提供压力输出。 片材基本上由诸如Kapton的薄材料制成，并且是柔性的，以便呈现表面的曲率，其中换能器暴露于施加到弯曲表面的压力。 传感器与柔性片材相结合，允许测量压力，而不会干扰测量表面的气流图案，并且由于其结构，在各种大气条件下都是防潮的。
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公开(公告)号：US07307325B2
公开(公告)日：2007-12-11
申请号：US11039587
申请日：2005-01-20
IPC分类号： H01L29/84 , H01L31/058
CPC分类号： G01L9/0055 , G01L19/0084
摘要： A silicon wafer is fabricated utilizing two or more semiconductor wafers. The wafers are processed using conventional wafer processing techniques and the wafer contains a plurality of output terminals which essentially are platinum titanium metallization or high temperature contacts. A glass cover member is provided which has a plurality of through holes. Each through hole is associated with a contact on the semiconductor wafer. A high temperature lead is directed through the through hole or aperture in the glass cover and is bonded directly to the appropriate contact. The lead is of a sufficient length to extend into a second non through aperture in the contact glass. The non through aperture is located on the side of the contact glass not in contact with the silicon sensor. The non through aperture is then filled with a high temperature conductive glass frit. A plurality of slots are provided. Each slot is associated with a through and a non through aperture to accommodate the wire as directed from the through aperture through the slot and into the non through aperture. The slots provide means of retaining or securing the wire as it passes from the through aperture to the non through aperture. The non through apertures as indicated are filled with a high temperature conductive glass frit which glass frit accommodates suitable pins.
摘要翻译： 利用两个或更多个半导体晶片制造硅晶片。 使用常规晶片处理技术处理晶片，并且晶片包含基本上是铂钛金属化或高温接触的多个输出端子。 提供了一种具有多个通孔的玻璃盖构件。 每个通孔与半导体晶片上的接触相关联。 高温引线通过玻璃盖中的通孔或孔直接接合到适当的接触处。 引线具有足够的长度以延伸到接触玻璃中的第二非通孔中。 非通孔位于接触玻璃的不与硅传感器接触的一侧。 然后用高温导电玻璃料填充非通孔。 提供多个槽。 每个狭槽与通孔和非通孔相关联，以便从通孔穿过狭槽引导并且进入非通孔。 这些槽提供了当线从通孔到非通孔时保持或固定的装置。 如所示的非通孔填充有玻璃料容纳适当针脚的高温导电玻璃料。
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公开(公告)号：US20100122581A1
公开(公告)日：2010-05-20
申请号：US12291870
申请日：2008-11-14
IPC分类号： G01L9/06
CPC分类号： G01L1/18 , G01L19/003 , G01M9/06
摘要： A novel flexible transducer structure is suitable for attaching to curved surface such as the leading edge of an aircraft wing. The structure comprises a thin flexible sheet of an insulating material with a leadless transducer secured to the sheet. The sheet is then placed over the curved surface and assumes the curvature of the surface. The transducer secured to the sheet provides an output of pressure according the pressure exerted on the sheet. The sheet basically is fabricated from a thin material such as Kapton and is flexible so as to assume the curvature of the surface with the transducer being exposed to pressure applied to the curved surface. The sensor in conjunction with the flexible sheet allows pressure to be measured without disturbing the air flow patterns of the measuring surfaces and because of its construction, is moisture resistant over a large variety of atmospheric conditions.
摘要翻译： 一种新颖的柔性换能器结构适用于连接到诸如飞机机翼前缘的弯曲表面。 该结构包括具有固定到片材的无引导换能器的绝缘材料的薄柔性片。 然后将片材放置在弯曲表面上并呈现表面的曲率。 固定到片材上的传感器根据施加在片材上的压力提供压力输出。 片材基本上由诸如Kapton的薄材料制成，并且是柔性的，以便呈现表面的曲率，其中换能器暴露于施加到弯曲表面的压力。 传感器与柔性片材相结合，允许测量压力，而不会干扰测量表面的气流图案，并且由于其结构，在各种大气条件下都是防潮的。
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公开(公告)号：US08578782B2
公开(公告)日：2013-11-12
申请号：US13253139
申请日：2011-10-05
摘要： A system for measuring a multiplicity of pressures as those experienced by a model in a wind tunnel is depicted. The system includes individual sensor devices which are connected to an electronics module. The sensors may be connected to the electronics module via a cable in a first embodiment. In an alternate embodiment, the sensors may be connected to the electronics module via a mating connector located therebetween. A memory component which stores compensation coefficients associated with each of the sensors may also be included in the system to correct errors associated with each sensor. The advantage of the various embodiments is that each sensor does not have any compensation stored thereon and thus, the sensors can be made very small to operate at very high temperatures without any loss of accuracy.
摘要翻译： 描绘了一种用于测量如风洞中的模型所经历的多种压力的系统。 该系统包括连接到电子模块的各个传感器装置。 在第一实施例中，传感器可以经由电缆连接到电子模块。 在替代实施例中，传感器可以经由位于其间的匹配连接器连接到电子模块。 存储与每个传感器相关联的补偿系数的存储器组件也可以被包括在系统中以校正与每个传感器相关联的错误。 各种实施例的优点是每个传感器不存在其上的任何补偿，因此，可以使传感器非常小以在非常高的温度下操作而没有任何精度的损失。
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5.发明申请公开(公告)号：US20100107773A1
公开(公告)日：2010-05-06
申请号：US12686990
申请日：2010-01-13
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
CPC分类号： G01L1/18 , C03C27/044 , G01L1/2287 , G01L9/0042 , G01L9/0054 , G01L19/0069 , G01L19/0084 , Y10T156/10
摘要： A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the piezoresistive sensor and associated transducer in ultra high temperature applications.
摘要翻译： 公开了压阻传感器装置和制造压阻器件的方法。 传感器装置包括具有压阻元件和与元件电连通的触点的硅晶片。 所述传感器装置还包括接触玻璃，所述接触玻璃联接到所述硅晶片并且具有与所述触点对准的孔。 传感器装置还包括用于将接触玻璃安装到集管玻璃的非导电玻璃料，以及设置在孔中并与触头电连通的导电非铅玻璃料。 用于制造压阻传感器装置的方法包括将接触玻璃接合到硅晶片，使得玻璃中的孔与晶片上的触点对齐，并用非铅玻璃料填充孔，使得玻璃料处于电 与联系人沟通。 使用无铅玻璃料防止压敏传感器和相关传感器在超高温应用中的灾难性故障。
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公开(公告)号：US07451655B2
公开(公告)日：2008-11-18
申请号：US11709639
申请日：2007-02-22
IPC分类号： G01L9/06
CPC分类号： G01L9/065
摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.
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7.发明授权公开(公告)号：US07363820B2
公开(公告)日：2008-04-29
申请号：US11585546
申请日：2006-10-24
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： G01L9/00
CPC分类号： G01L19/0084 , G01L9/0055
摘要： An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the aperture formed by the frame, allowing the active area of the sensor to be exposed to the pressure medium. The sealing cover is bonded to the periphery of the rim and to the glass supporting pedestal.
摘要翻译： 超高温密封保护换能器包括具有有源区域的传感器芯片，在该有源区域上形成压电感测元件。 这些元件位于硅晶片芯片的顶表面上并且具有从芯片的有源区域延伸的引线和端子。 活动区域被延伸的边缘或框架包围。 有源区域涂覆有钝化压阻感测网络的氧化物层。 然后将芯片连接到玻璃基座，其尺寸大于传感器芯片。 玻璃基座在每个角落都有一个通孔或孔。 然后将整个复合结构安装到高温集管上，其中集管的金属化区域暴露于玻璃基座中的孔; 然后将高温引线一端直接粘合到传感器芯片的金属化接触区域。 引线具有足够的长度以延伸到玻璃基座中的通孔中。 然后将密封盖连接到整个复合传感器以密封所有的互连。 密封盖是玻璃结构，具有对应于由框架形成的孔的中心孔，允许传感器的有效区域暴露于压力介质。 密封盖结合到边缘的周边和玻璃支撑基座上。
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公开(公告)号：US07231828B2
公开(公告)日：2007-06-19
申请号：US11234724
申请日：2005-09-23
IPC分类号： G01L9/06
CPC分类号： G01L9/065
摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.
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公开(公告)号：US5425841A
公开(公告)日：1995-06-20
申请号：US78391
申请日：1993-06-16
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： G01P15/12 , H01L21/306 , B44C1/22
CPC分类号： G01P15/123 , Y10S73/01 , Y10S73/04
摘要： An electromechanical transducer is provided, and the process for making it utilizes a piezoresistive element or gage which is dielectrically isolated from a gap spanning member and substrate upon which it is supported. The gage of the invention is a force gage and is derived from a sacrificial wafer by a series of etching and bonding steps which ultimately provide a gage with substantially reduced strain energy requirements.
摘要翻译： 提供了一种机电传感器，并且其制造方法利用了压电元件或量规，该压阻元件或量规与其所支撑的间隙跨越构件和衬底介电隔离。 本发明的量具是力量计，并且通过一系列蚀刻和结合步骤从牺牲晶片获得，其最终提供具有显着降低的应变能量需求的量具。
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10.发明授权Process of bonding semiconductor wafers having conductive semiconductor material extending through each wafer at the bond areas 失效将具有导电半导体材料的半导体晶片接合在接合区域上延伸穿过每个晶片的工艺
公开(公告)号：US5401672A
公开(公告)日：1995-03-28
申请号：US292097
申请日：1994-08-17
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
CPC分类号： H01L25/0657 , H01L23/481 , H01L2225/06541 , H01L2924/0002 , Y10S148/012
摘要： A process wherein plurality of individual device layers having semiconductor material conductive regions extending therethrough are bonded together before or after one or more circuit elements have been fabricated on each layer. Groups of device layers are formed by electrochemically anodizing a wafer of semiconductor material. The wafer is rendered totally porous except for a series of non-porous regions extending therethrough. The wafer is then oxidized and densifted to result in a wafer having a plurality of electrically isolated extended contacts. A plurality of wafers are processed in this manner. A variety of integrated circuit devices are then formed on the surface of each wafer. Once the processing of all individual wafers is completed, each wafer is bonded to another, with the extending contact aligned to electrically interconnect each device layer. The wafers are then diced to provide a plurality of multi-level integrated circuit structures.
摘要翻译： 其中在每个层上制造一个或多个电路元件之前或之后，具有延伸穿过其中的半导体材料导电区域的多个单独器件层结合在一起。 通过电化学阳极氧化半导体材料的晶片形成器件层组。 除了延伸穿过其中的一系列无孔区域之外，晶片是完全多孔的。 然后将晶片氧化并致密化以产生具有多个电隔离的延伸触点的晶片。 以这种方式处理多个晶片。 然后在每个晶片的表面上形成各种集成电路器件。 一旦完成了所有单个晶片的处理，每个晶片被结合到另一个晶片，其中延伸的触点对准以电连接每个器件层。 然后切割晶片以提供多个多级集成电路结构。
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