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    REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEATURES
    1.
    发明申请
    REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEATURES 有权
    在微特征中减少缺陷硅或硅锗沉积

    公开(公告)号：US20080169534A1

    公开(公告)日：2008-07-17

    申请号：US11622204

    申请日：2007-01-11

    申请人： Anthony Dip ,  John Gumpher ,  Allen John Leith ,  Seungho Oh

    发明人： Anthony Dip ,  John Gumpher ,  Allen John Leith ,  Seungho Oh

    IPC分类号： H01L21/36 ,  H01L29/06

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262 ,  H01L21/02639

    摘要： A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.

    摘要翻译： 提供了一种减少缺陷的方法，例如在图案化衬底上的微特征中的无空隙或减少的空隙Si或SiGe沉积。 微型特征包括侧壁，并且图案化衬底在场区域和微特征的侧壁和底部上包含隔离层。 该方法包括在微特征的底部形成Si或SiGe种子层，并且通过在Si或SiGe种子层上选择性地生长Si或SiGe，从底部至少部分地填充微特征。 根据一个实施例，Si或SiGe种子层通过将沉积的Si或SiGe层沉积在图案化的衬底上，从场区去除Si或SiGe层而形成，在H区存在下热处理Si或SiGe层， 从而将Si或SiGe层的至少一部分从侧壁传递到微特征的底部，并且从场区域和侧壁蚀刻Si或SiGe残留物。

    Reduced defect silicon or silicon germanium deposition in micro-features
    2.
    发明授权
    Reduced defect silicon or silicon germanium deposition in micro-features 有权
    在微特征中减少缺陷硅或硅锗沉积

    公开(公告)号：US08263474B2

    公开(公告)日：2012-09-11

    申请号：US11622204

    申请日：2007-01-11

    申请人： Anthony Dip ,  John Gumpher ,  Allen John Leith ,  Seungho Oh

    发明人： Anthony Dip ,  John Gumpher ,  Allen John Leith ,  Seungho Oh

    IPC分类号： H01L21/76

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262 ,  H01L21/02639

    摘要： A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.

    摘要翻译： 提供了一种减少缺陷的方法，例如在图案化衬底上的微特征中的无空隙或减少的空隙Si或SiGe沉积。 微型特征包括侧壁，并且图案化衬底在场区域和微特征的侧壁和底部上包含隔离层。 该方法包括在微特征的底部形成Si或SiGe种子层，并且通过在Si或SiGe种子层上选择性地生长Si或SiGe，从底部至少部分地填充微特征。 根据一个实施例，Si或SiGe种子层通过将沉积Si或SiGe层保护到图案化衬底上而形成，从场区去除Si或SiGe层，在H 2气体存在下热处理Si或SiGe层 以将Si或SiGe层的至少一部分从侧壁传递到微特征的底部，并且从场区域和侧壁蚀刻Si或SiGe残留物。

    Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
    4.
    发明授权
    Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor 有权
    微特征填充方法和使用六氯二硅烷或其他含氯硅前体的装置

    公开(公告)号：US07205187B2

    公开(公告)日：2007-04-17

    申请号：US11035730

    申请日：2005-01-18

    申请人： Allen John Leith ,  Anthony Dip ,  Seungho Oh

    发明人： Allen John Leith ,  Anthony Dip ,  Seungho Oh

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L21/32055 ,  C23C16/045 ,  C23C16/24 ,  H01L21/76877

    摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).

    摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在微特征中形成含硅膜。 提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。 或者，微特征可以暴露于DCS，SiCl 4和SiHCl 3气体。 或者，微特征可以暴露于（SiH 4+ + HCl）。

    Deposition of silicon-containing films from hexachlorodisilane
    5.
    发明授权
    Deposition of silicon-containing films from hexachlorodisilane 失效
    从六氯二硅烷中沉积含硅膜

    公开(公告)号：US07468311B2

    公开(公告)日：2008-12-23

    申请号：US10673375

    申请日：2003-09-30

    申请人： Anthony Dip ,  Seungho Oh ,  Allen John Leith

    发明人： Anthony Dip ,  Seungho Oh ,  Allen John Leith

    IPC分类号： H01L21/20

    CPC分类号： C30B25/02 ,  C23C16/24 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

    摘要： A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.

    摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，加热衬底并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在衬底上形成含硅膜。 该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择性地沉积含硅膜。 提供了一种包含用于使用HCD工艺气体在衬底上形成含硅膜的处理系统的处理工具。

    Method and system for removing an oxide from a substrate
    6.
    发明授权
    Method and system for removing an oxide from a substrate 有权
    从基材中除去氧化物的方法和系统

    公开(公告)号：US07524769B2

    公开(公告)日：2009-04-28

    申请号：US11094462

    申请日：2005-03-31

    申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

    发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02046 ,  C23C16/0245 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/3185 ,  H01L21/76814

    摘要： A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.

    摘要翻译： 用于处理衬底的方法和系统包括在处理室中提供衬底，其中衬底包含其上形成的氧化物层，激发耦合到处理室的远程等离子体源中的含氢气体，并将衬底暴露于 在低于约900℃的第一衬底温度下激发含氢气体的流动，以从衬底去除氧化物层。 然后将衬底保持在不同于第一衬底温度的第二温度，并且在第二衬底温度下在衬底上形成含硅膜。

    Low temperature formation of patterned epitaxial Si containing films
    7.
    发明授权
    Low temperature formation of patterned epitaxial Si containing films 失效
    图案外延含Si薄膜的低温形成

    公开(公告)号：US07405140B2

    公开(公告)日：2008-07-29

    申请号：US11206059

    申请日：2005-08-18

    申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

    发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

    IPC分类号： H01L21/36 ,  H01L21/20

    CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/32135

    摘要： A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

    摘要翻译： 一种在低温下在半导体结构上有选择地形成外延含Si膜的方法。 该方法包括在处理室中提供结构，该结构包含具有外延Si表面积的Si衬底和其上的图案化膜区域。 将Si膜非选择性地沉积到该结构上，该Si膜包含沉积在外延Si表面上的外延Si膜和沉积在图案化膜的暴露表面上的非外延Si膜。 非外延Si膜被选择性地干蚀刻去除以形成图案化的外延Si膜。 Si膜可以是SiGe膜。

    Sequential oxide removal using fluorine and hydrogen
    8.
    发明授权
    Sequential oxide removal using fluorine and hydrogen 失效
    使用氟和氢进行连续的氧化物去除

    公开(公告)号：US07501349B2

    公开(公告)日：2009-03-10

    申请号：US11393736

    申请日：2006-03-31

    申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

    发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/67109

    摘要： A method is provided for oxide removal from a substrate. The method includes providing the substrate in a process chamber where the substrate has an oxide layer formed thereon, and performing a sequential oxide removal process. The sequential oxide removal process includes exposing the substrate at a first substrate temperature to a flow of a first etching gas containing F2 to partially remove the oxide layer from the substrate, raising the temperature of the substrate from the first substrate temperature to a second substrate temperature, and exposing the substrate at the second temperature to a flow of a second etching gas containing H2 to further remove the oxide layer from the substrate. In one embodiment, a film may be formed on the substrate following the sequential oxide removal process.

    摘要翻译： 提供了从基板去除氧化物的方法。 该方法包括在基板具有形成在其上的氧化物层的处理室中提供基板，并且执行顺序的氧化物去除工艺。 顺序氧化物去除工艺包括将第一衬底温度下的衬底暴露于含有F2的第一蚀刻气体的流动以从衬底部分地去除氧化物层，从而将衬底的温度从第一衬底温度升高到第二衬底温度 并且将第二温度下的衬底暴露于含有H 2的第二蚀刻气体的流中，以进一步从衬底去除氧化物层。 在一个实施例中，可以在顺序氧化物去除工艺之后在衬底上形成膜。

    Method of forming strained epitaxial carbon-doped silicon films
    9.
    发明授权
    Method of forming strained epitaxial carbon-doped silicon films 有权
    形成应变外延碳掺杂硅膜的方法

    公开(公告)号：US08466045B2

    公开(公告)日：2013-06-18

    申请号：US12830210

    申请日：2010-07-02

    申请人： John Gumpher ,  Seungho Oh ,  Anthony Dip

    发明人： John Gumpher ,  Seungho Oh ,  Anthony Dip

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02664

    摘要： A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.

    摘要翻译： 用于形成应变外延碳掺杂硅（Si）膜的方法，例如用于电子器件的升高的源极和漏极区域。 该方法包括提供具有外延Si表面和图案化膜的结构，在结构上非选择性地沉积掺杂碳的Si膜，所述掺杂碳的Si膜含有沉积到外延Si表面上的外延碳掺杂的Si膜 以及沉积到图案化膜上的非外延碳掺杂Si膜，并且在掺碳的Si膜上非选择性地沉积Si膜，所述Si膜含有沉积到外延碳掺杂的Si膜上的外延Si膜，以及 沉积在非外延碳掺杂Si膜上的非外延Si膜。 该方法还包括干蚀刻去除非外延Si膜，非外延碳掺杂Si膜，并且小于整个外延Si膜以在外延Si表面上形成应变外延碳掺杂Si膜。