-
公开(公告)号：US5874014A
公开(公告)日：1999-02-23
申请号：US483982
申请日：1995-06-07
IPC分类号： H05H1/46 , C23C8/36 , C23C16/27 , C23C16/50 , C23C16/507 , C30B29/04 , H01J37/32 , H01L21/31 , H05H1/00
CPC分类号： C23C16/272 , C23C16/277 , C23C16/507 , C23C8/36 , H01J37/321 , H01J37/32458 , H01J37/32522
摘要： A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled. Also provided is an axially-extending array of current-carrying conductors which at least partially encircle the chamber, are transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber, and a power supply connected to the conductor array and adapted to provide high-frequency current in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber, and wherein the work surface is exposed to the plasma sheath and extends in the direction of the longitudinal axis.
-
公开(公告)号：US6105518A
公开(公告)日：2000-08-22
申请号：US885720
申请日：1997-06-30
IPC分类号： H05H1/46 , C23C8/36 , C23C16/27 , C23C16/50 , C23C16/507 , C30B29/04 , H01J37/32 , H01L21/31 , H05H1/00
CPC分类号： C23C16/272 , C23C16/277 , C23C16/507 , C23C8/36 , H01J37/321 , H01J37/32458 , H01J37/32522
摘要： A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled. Also provided is an axially-extending array of current-carrying conductors which at least partially encircle the chamber, are transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber, and a power supply connected to the conductor array and adapted to provide high-frequency current in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber, and wherein the work surface is exposed to the plasma sheath and extends in the direction of the longitudinal axis.
摘要翻译： 一种用于处理工作表面的方法和设备，其中设置有具有纵向轴线和纵向延伸的导电侧壁的室，至少一个侧壁具有至少一个纵向延伸的间隙，其中断通过横向于纵向的侧壁的电流路径 轴，并且其中所述室被密封以允许控制所述室内的压力。 还提供了轴向延伸的载流导体阵列，其至少部分地环绕腔室，横向于纵向轴线，并且建立平行于腔室的纵向轴线的磁场，以及连接到导体的电源 阵列并且适于在导体中提供高频电流以磁性地诱导腔室中的气态材料的电离，并形成等离子体护套，其围绕并沿着纵向轴线延伸并且与腔的侧壁一致并且其中工作表面 暴露于等离子体护套并沿着纵向轴线的方向延伸。
-
3.发明授权Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges 失效使用水基等离子体放电的金刚石膜的化学气相沉积工艺和设备
公开(公告)号：US5480686A
公开(公告)日：1996-01-02
申请号：US151184
申请日：1993-11-12
申请人： Ronald A. Rudder , George C. Hudson , Robert C. Hendry , Robert J. Markunas , Michael J. Mantini
发明人： Ronald A. Rudder , George C. Hudson , Robert C. Hendry , Robert J. Markunas , Michael J. Mantini
IPC分类号： H05H1/46 , B05D3/06 , C23C16/26 , C23C16/27 , C23C16/452 , C23C16/50 , C23C16/507 , C30B29/04
CPC分类号： C23C16/272 , C23C16/277 , C23C16/452 , C23C16/507
摘要： A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedstock gas enters a conversion zone. In the second step, by-products from the conversion zone proceed to an atomization zone where diamond is produced. In a preferred embodiment a feedstock gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (55.degree.-1100.degree. C.) and low pressure (0.1 to 100 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the reaction process, the feedstock gas mixture is converted to H.sub.2, CO, C.sub.2 H.sub.2, no O.sub.2, with some residual water. Oxygen formerly on the water is transferred to CO. Hence, an etchant species (H.sub.2 O, OH, O) is replaced in the reactor by CO, a growth species and prevents undesirous consumption of diamond (the net-product). In a preferred embodiment, the apparatus assures conversion by preventing gas circumvention of the conversion zone prior to dissociation in the hydrogen atomization zone to produce the necessary atomic hydrogen for diamond growth.
摘要翻译： 用于使用具有所需部分的所选化合物的蒸气混合物生长金刚石膜的化学气相沉积（CVD）方法和装置，特别是提供除去石墨的碳和蚀刻剂物质的前体。 该过程涉及两个步骤。 在第一步中，原料气进入转化区。 在第二步，转化区的副产物进入到产生钻石的雾化区。 在优选的实施方案中，包含提供蚀刻剂物质的至少20％的水的原料气相混合物与在低温（55℃-1100℃）和低压（0.1至100℃）下提供所需碳前体的醇反应 Torr），优选在有助酸（乙酸）存在下，其有助于蚀刻剂物质的反应物。 在反应过程中，原料气体混合物被转化为H 2，CO，C 2 H 2，没有O 2，并含有一些残留的水。 以前在水上的氧气被转移到CO，因此，在反应器中用CO（一种生长物质）代替蚀刻剂物质（H 2 O，OH，O），并防止金刚石（净产物）的不必要的消耗。 在优选的实施方案中，该装置通过在氢雾化区中解离之前防止气体绕开转化区来确保转化，以产生金刚石生长所需的原子氢。
-
4.发明授权Chemical vapor deposition of diamond films using water-based plasma discharges 失效使用水基等离子体放电的金刚石膜的化学气相沉积
公开(公告)号：US5418018A
公开(公告)日：1995-05-23
申请号：US061291
申请日：1993-05-14
IPC分类号： C23C16/26 , C23C16/27 , C23C16/50 , C23C16/507 , C23C16/511 , C30B29/04 , B05D3/06 , B01J3/06
CPC分类号： C23C16/272 , C23C16/277 , C23C16/507
摘要： A chemical vapor deposition (CVD) technique (process and apparatus) for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite disclosed. The selected compounds are reacted in a plasma created by a confined rf discharge to produce diamond films on a diamond or a non-diamond substrate. In a preferred embodiment a gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (300.degree.-650.degree. C.) and low pressure (0.1 to 10 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the preferred embodiment the volumetric mixtures have typically been 40-80% water and 60-20% alcohol. The gaseous mixture of H.sub.2 O and alcohol is dissociated to produce H, OH, and carbon radicals. Both OH and atomic H are capable of etching graphite from the depositing carbon layer. The selected compounds are reacted in a CVD apparatus in which a confined rf discharge is used to create an electric discharge or plasma. The plasma is confined between an inductive rf coil via transformer isolation from the chamber ground.
摘要翻译： 使用具有所需部分的所选化合物的蒸气混合物生长金刚石膜的化学气相沉积（CVD）技术（工艺和装置），具体提供除去所公开的石墨的碳和蚀刻剂物质的前体。 所选择的化合物在由限制性rf放电产生的等离子体中反应，以在金刚石或非金刚石基底上产生金刚石膜。 在优选的实施方案中，包含至少20％的提供蚀刻剂物质的水的气相混合物与在低温（300-650℃）和低压（0.1至10托）下提供所需碳前体的醇反应 ），优选在有机酸（乙酸）存在下，其有助于蚀刻剂物质的反应物。 在优选的实施方案中，体积混合物通常是40-80％的水和60-20％的醇。 H 2 O和醇的气体混合物被解离以产生H，OH和碳自由基。 OH和原子H都能够从沉积碳层中蚀刻石墨。 所选择的化合物在其中使用限定的rf放电产生放电或等离子体的CVD装置中反应。 等离子体通过变压器隔离从腔室接地限制在感应式rf线圈之间。
-
公开(公告)号：US06552295B2
公开(公告)日：2003-04-22
申请号：US09739748
申请日：2000-12-20
IPC分类号： B23K1000
CPC分类号： H05H1/46 , Y10S588/90
摘要： A method and apparatus for plasma waste disposal of hazardous waste material, where the hazardous material is volatilized under vacuum inside a containment chamber to produce a pre-processed gas as input to a plasma furnace including a plasma-forming region in which a plasma-forming magnetic field is produced. The pre-processed gas is passed at low pressure and without circumvention through the plasma-forming region and is directly energized to an inductively coupled plasma state such that hazardous waste reactants included in the pre-processed gas are completely dissociated in transit through the plasma-forming region. Preferably, the plasma-forming region is shaped as a vacuum annulus and is dimensioned such that there is no bypass by which hazardous waste reactants in the pre-processed gas can circumvent the plasma-forming region. The plasma furnace is powered by a high frequency power supply outputting power at a fundamental frequency. The power supply contains parasitic power dissipation mechanisms to prevent non-fundamental, parasitic frequencies from destabilizing the fundamental frequency output power. These power loss mechanisms use either distributed resistance or frequency-selective power-loss devices to prevent parasitic oscillations from instantaneously turning on the high frequency power oscillator at non-fundamental frequencies.
-
公开(公告)号：US07112536B2
公开(公告)日：2006-09-26
申请号：US10349081
申请日：2003-01-23
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266
摘要： A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple power inductively into the chamber and based thereon produce a plasma in the plasma chamber. The window can be shaped and dimensioned to control an amount of power capacitively coupled to the plasma chamber by means of the electric field so that the amount of capacitively coupled power is selected in a range from zero to a predetermined amount. Also, a tuned antenna strap having r.f. power applied thereto to produce a standing wave therein can be arranged adjacent the window to couple magnetic field from a current maximum formed in the strap to the interior of the chamber. A desired amount of magnetic field and/or electric field coupling can be produced by arrangement of the chamber window adjacent that portion of the antenna strap exhibiting the desired current/voltage relationship. The system may be formed in a line source configuration, or in a cylindrical source configuration. The window may have slots and/or apertures, the size and shape of which may be variable.
-
公开(公告)号：US06558504B1
公开(公告)日：2003-05-06
申请号：US09466128
申请日：1999-12-21
IPC分类号： C23F102
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266
摘要： A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple power inductively into the chamber and based thereon produce a plasma in the plasma chamber. The window can be shaped and dimensioned to control an amount of power capacitively coupled to the plasma chamber by means of the electric field so that the amount of capacitively coupled power is selected in a range from zero to a predetermined amount. Also, a tuned antenna strap having r.f. power applied thereto to produce a standing wave therein can be arranged adjacent the window to couple magnetic field from a current maximum formed in the strap to the interior of the chamber. A desired amount of magnetic field and/or electric field coupling can be produced by arrangement of the chamber window adjacent that portion of the antenna strap exhibiting the desired current/voltage relationship. The system may be formed in a line source configuration, or in a cylindrical source configuration. The window may have slots and/or apertures, the size and shape of which may be variable.
摘要翻译： 一种等离子体处理系统和方法，其中电源产生磁场和电场，并且设置在电源和等离子体室内部之间的窗口将磁场耦合到等离子体室中，从而将功率感应地耦合到室中 并基于此在等离子体室中产生等离子体。 窗口的形状和尺寸可以通过电场来控制电容耦合到等离子体室的功率量，使得在0到预定量的范围内选择电容耦合功率的量。 另外，具有r.f.的调谐天线带。 施加到其上以在其中产生驻波的功率可以布置在窗口附近，以将来自形成在带中的电流最大值的磁场耦合到腔室的内部。 可以通过布置邻近显示期望的电流/电压关系的天线带的该部分的室窗口来产生所需量的磁场和/或电场耦合。 该系统可以形成为线源配置或圆柱形源配置。 窗口可以具有槽和/或孔，其尺寸和形状可以是可变的。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.027 秒)
