公开(公告)号：US5480686A

公开(公告)日：1996-01-02

申请号：US151184

申请日：1993-11-12

申请人： Ronald A. Rudder ,  George C. Hudson ,  Robert C. Hendry ,  Robert J. Markunas ,  Michael J. Mantini

发明人： Ronald A. Rudder ,  George C. Hudson ,  Robert C. Hendry ,  Robert J. Markunas ,  Michael J. Mantini

IPC分类号： H05H1/46 ,  B05D3/06 ,  C23C16/26 ,  C23C16/27 ,  C23C16/452 ,  C23C16/50 ,  C23C16/507 ,  C30B29/04

CPC分类号： C23C16/272 ,  C23C16/277 ,  C23C16/452 ,  C23C16/507

摘要： A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedstock gas enters a conversion zone. In the second step, by-products from the conversion zone proceed to an atomization zone where diamond is produced. In a preferred embodiment a feedstock gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (55.degree.-1100.degree. C.) and low pressure (0.1 to 100 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the reaction process, the feedstock gas mixture is converted to H.sub.2, CO, C.sub.2 H.sub.2, no O.sub.2, with some residual water. Oxygen formerly on the water is transferred to CO. Hence, an etchant species (H.sub.2 O, OH, O) is replaced in the reactor by CO, a growth species and prevents undesirous consumption of diamond (the net-product). In a preferred embodiment, the apparatus assures conversion by preventing gas circumvention of the conversion zone prior to dissociation in the hydrogen atomization zone to produce the necessary atomic hydrogen for diamond growth.

摘要翻译： 用于使用具有所需部分的所选化合物的蒸气混合物生长金刚石膜的化学气相沉积（CVD）方法和装置，特别是提供除去石墨的碳和蚀刻剂物质的前体。 该过程涉及两个步骤。 在第一步中，原料气进入转化区。 在第二步，转化区的副产物进入到产生钻石的雾化区。 在优选的实施方案中，包含提供蚀刻剂物质的至少20％的水的原料气相混合物与在低温（55℃-1100℃）和低压（0.1至100℃）下提供所需碳前体的醇反应 Torr），优选在有助酸（乙酸）存在下，其有助于蚀刻剂物质的反应物。 在反应过程中，原料气体混合物被转化为H 2，CO，C 2 H 2，没有O 2，并含有一些残留的水。 以前在水上的氧气被转移到CO，因此，在反应器中用CO（一种生长物质）代替蚀刻剂物质（H 2 O，OH，O），并防止金刚石（净产物）的不必要的消耗。 在优选的实施方案中，该装置通过在氢雾化区中解离之前防止气体绕开转化区来确保转化，以产生金刚石生长所需的原子氢。

公开(公告)号：US5418018A

公开(公告)日：1995-05-23

申请号：US061291

申请日：1993-05-14

申请人： Ronald A. Rudder ,  George C. Hudson ,  Robert C. Hendry ,  Robert J. Markunas

发明人： Ronald A. Rudder ,  George C. Hudson ,  Robert C. Hendry ,  Robert J. Markunas

IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/507 ,  C23C16/511 ,  C30B29/04 ,  B05D3/06 ,  B01J3/06

CPC分类号： C23C16/272 ,  C23C16/277 ,  C23C16/507

摘要： A chemical vapor deposition (CVD) technique (process and apparatus) for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite disclosed. The selected compounds are reacted in a plasma created by a confined rf discharge to produce diamond films on a diamond or a non-diamond substrate. In a preferred embodiment a gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (300.degree.-650.degree. C.) and low pressure (0.1 to 10 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the preferred embodiment the volumetric mixtures have typically been 40-80% water and 60-20% alcohol. The gaseous mixture of H.sub.2 O and alcohol is dissociated to produce H, OH, and carbon radicals. Both OH and atomic H are capable of etching graphite from the depositing carbon layer. The selected compounds are reacted in a CVD apparatus in which a confined rf discharge is used to create an electric discharge or plasma. The plasma is confined between an inductive rf coil via transformer isolation from the chamber ground.

摘要翻译： 使用具有所需部分的所选化合物的蒸气混合物生长金刚石膜的化学气相沉积（CVD）技术（工艺和装置），具体提供除去所公开的石墨的碳和蚀刻剂物质的前体。 所选择的化合物在由限制性rf放电产生的等离子体中反应，以在金刚石或非金刚石基底上产生金刚石膜。 在优选的实施方案中，包含至少20％的提供蚀刻剂物质的水的气相混合物与在低温（300-650℃）和低压（0.1至10托）下提供所需碳前体的醇反应 ），优选在有机酸（乙酸）存在下，其有助于蚀刻剂物质的反应物。 在优选的实施方案中，体积混合物通常是40-80％的水和60-20％的醇。 H 2 O和醇的气体混合物被解离以产生H，OH和碳自由基。 OH和原子H都能够从沉积碳层中蚀刻石墨。 所选择的化合物在其中使用限定的rf放电产生放电或等离子体的CVD装置中反应。 等离子体通过变压器隔离从腔室接地限制在感应式rf线圈之间。

公开(公告)号：US4870030A

公开(公告)日：1989-09-26

申请号：US100477

申请日：1987-09-24

申请人： Robert J. Markunas ,  Robert Hendry ,  Ronald A. Rudder

发明人： Robert J. Markunas ,  Robert Hendry ,  Ronald A. Rudder

IPC分类号： C23C16/22 ,  C23C16/452 ,  C30B25/10

CPC分类号： C30B25/105 ,  C23C16/22 ,  C23C16/452 ,  C30B29/06 ,  Y10S148/006 ,  Y10S148/025 ,  Y10S148/045

摘要： A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These reactive species are then spatially filtered to remove selected of the reactive species, leaving only other, typically metastable, species which are then mixed with a carrier gas including constituent elements to be deposited on the substrate. During this mixing, the selected spatially filtered reactive species of the feed gas chemically interacts, i.e., partially dissociates and activates, in the gas phase, the carrier gas, with the process variables being selected so that there is no back-diffusion of gases or reactive species into the feed gas activation region. The dissociated and activated carrier gas along with the surviving reactive species of the feed gas then flows to the substrate. At the substrate, the surviving reactive species of the feed gas further dissociate the carrier gas and order the activated carrier gas species on the substrate whereby the desired epitaxial semiconductor layer is grown on the substrate.

摘要翻译： 用于在衬底上生长半导体层的远程等离子体增强CVD装置和方法，其中首先在活化区域中激活不本身含有待沉积的构成元素的中间进料气体，以产生多种进料气体的反应性物质。 然后将这些反应性物质进行空间过滤以除去所选择的反应性物质，仅留下其它通常为亚稳态的物质，然后将其与包含待沉积在基底上的构成元素的载气混合。 在该混合期间，所选择的空间过滤的进料气体的反应性物质在气相中化学相互作用，即在气相中部分解离并活化载气，其中选择工艺变量，使得不存在气体的反向扩散或 反应性物质进入进料气体活化区域。 然后将解离和活化的载气与进料气体的存活反应性物质一起流入基材。 在衬底上，进料气体的存活的反应性物质进一步离解载气并且将活化的载气物质排列在衬底上，从而在衬底上生长期望的外延半导体层。

公开(公告)号：US5180435A

公开(公告)日：1993-01-19

申请号：US604245

申请日：1990-10-29

申请人： Robert J. Markunas ,  Robert Hendry ,  Ronald A. Rudder

发明人： Robert J. Markunas ,  Robert Hendry ,  Ronald A. Rudder

IPC分类号： C23C16/22 ,  C23C16/452 ,  C30B25/10

CPC分类号： C30B25/105 ,  C23C16/22 ,  C23C16/452 ,  C30B29/06

摘要： A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein a intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These reactive species are then spatially filtered to remove selected of the reactive species, leaving only other, typically metastable, species which are then mixed with a carrier gas including constituent elements to be deposited on the substrate. During this mixing, the selected spatially filtered reactive species of the feed gas chemically interacts, i.e., partially dissociates and activates, in the gas phase, the carrier gas, with the process variables being selected so that there is no back-diffusion of gases or reactive species into the feed gas activation region. The dissociated and activated carrier gas along with the surviving reactive species of the feed gas then flows to the substrate. At the substrate, the surviving reactive species of the feed gas further dissociate the carrier gas and order the activated carrier gas species on the substrate whereby the desired epitaxial semiconductor layer is grown on the substrate.

摘要翻译： 用于在衬底上生长半导体层的远程等离子体增强CVD装置和方法，其中中间进料气体本身不含有待沉积的构成元素，首先在活化区域中活化，以产生多种反应性物质的进料气体。 然后将这些反应性物质进行空间过滤以除去所选择的反应性物质，仅留下其它通常为亚稳态的物质，然后将其与包含待沉积在基底上的构成元素的载气混合。 在该混合期间，所选择的空间过滤的进料气体的反应性物质在气相中化学相互作用，即在气相中部分解离并活化载气，其中选择工艺变量，使得不存在气体的反向扩散或 反应性物质进入进料气体活化区域。 然后将解离和活化的载气与进料气体的存活反应性物质一起流入基材。 在衬底上，进料气体的存活的反应性物质进一步离解载气并且将活化的载气物质排列在衬底上，从而在衬底上生长期望的外延半导体层。

公开(公告)号：US5018479A

公开(公告)日：1991-05-28

申请号：US375949

申请日：1989-08-10

申请人： Robert J. Markunas ,  Robert Hendry ,  Ronald A. Rudder

发明人： Robert J. Markunas ,  Robert Hendry ,  Ronald A. Rudder

IPC分类号： C23C16/22 ,  C23C16/452 ,  C30B25/10

CPC分类号： C30B25/105 ,  C23C16/22 ,  C23C16/452 ,  C30B29/06

摘要： A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These reactive species are then spatially filtered to remove selected of the reactive species, leaving only other, typically metastable, species which are then mixed with a carrier gas including constituent elements to be deposited on the substrate. During this mixing, the selected spatially filtered reactive species of the feed gas chemically interacts, i.e., partially dissociates and activates, in the gas phase, the carrier gas, with the process variables being selected so that there is no back-diffusion of gases or reactive species into the feed gas activation region. The dissociated and activated carrier gas along with the surviving reactive species of the feed gas then flows to the substrate. At the substrate, the surviving reactive species of the feed gas further dissociate the carrier gas and order the activated carrier gas species on the substrate whereby the desired epitaxial semiconductor layer is grown on the substrate.

摘要翻译： 用于在衬底上生长半导体层的远程等离子体增强CVD装置和方法，其中首先在活化区域中激活不本身含有待沉积的构成元素的中间进料气体，以产生多种反应物质的进料气体。 然后将这些反应性物质进行空间过滤以除去所选择的反应性物质，仅留下其它通常为亚稳态的物质，然后将其与包含待沉积在基底上的构成元素的载气混合。 在该混合期间，所选择的空间过滤的进料气体的反应性物质在气相中化学相互作用，即在气相中部分解离并活化载气，其中选择工艺变量，使得不存在气体的反向扩散或 反应性物质进入进料气体活化区域。 然后将解离和活化的载气与进料气体的存活反应性物质一起流入基材。 在衬底上，进料气体的存活的反应性物质进一步离解载气并且将活化的载气物质排列在衬底上，从而在衬底上生长期望的外延半导体层。

公开(公告)号：US5168330A

公开(公告)日：1992-12-01

申请号：US620574

申请日：1990-12-03

申请人： Daniel J. Vitkavage ,  Gaius G. Fountain ,  Sunil Hattangady ,  Ronald A. Rudder ,  Robert J. Markunas

发明人： Daniel J. Vitkavage ,  Gaius G. Fountain ,  Sunil Hattangady ,  Ronald A. Rudder ,  Robert J. Markunas

IPC分类号： H01L29/10 ,  H01L29/47 ,  H01L29/51 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/1091 ,  H01L29/47 ,  H01L29/475 ,  H01L29/51

摘要： A semiconductor device including a single crystal semiconductor host material having a surface; an ultrathin pseudomorphic single crystal epitaxial interlayer formed on the surface of the host material, wherein the interlayer is formed of a material and has a thickness selected so that the material of the interlayer is elastically deformed on the surface of the host material to match the lattice constant of the interlayer material with the lattice constant of the host material; and a further material incompatible with the host material when interfaced directly with the host material, but compatible with the interlayer, provided on the interlayer and thereby interfaced with the host material to perform a predetermined function with respect to the interlayer and the host material. In a preferred embodiment, the host material is a material selected from the group consisting of Ge, GaAs, InSb, InP, group II-V compounds and alloys thereof; the interlayer material is formed of pseudomorphic silicon, having a thickness of approximately 10 .ANG. and the further material is formed of SiO.sub.2 or a conductive material.

摘要翻译： 一种包括具有表面的单晶半导体主体材料的半导体器件; 形成在主体材料的表面上的超薄假晶单晶外延中间层，其中中间层由材料形成，并且具有选择的厚度，使得中间层的材料在主体材料的表面上弹性变形以匹配晶格 中间层材料的常数与主体材料的晶格常数; 以及当与主体材料直接接合但与中间层相容但与中间层相连并且由此与主体材料相接触以相对于中间层和主体材料执行预定功能时与主体材料不相容的另一材料。 在优选的实施方案中，主体材料是选自Ge，GaAs，InSb，InP，II-V族化合物及其合金的材料; 中间层材料由假晶硅形成，厚度约为10，另外的材料由SiO2或导电材料形成。

公开(公告)号：US5874014A

公开(公告)日：1999-02-23

申请号：US483982

申请日：1995-06-07

申请人： Anthony E. Robson ,  Ronald A. Rudder ,  Robert C. Hendry ,  Moses M. David ,  James V. Burt

发明人： Anthony E. Robson ,  Ronald A. Rudder ,  Robert C. Hendry ,  Moses M. David ,  James V. Burt

IPC分类号： H05H1/46 ,  C23C8/36 ,  C23C16/27 ,  C23C16/50 ,  C23C16/507 ,  C30B29/04 ,  H01J37/32 ,  H01L21/31 ,  H05H1/00

CPC分类号： C23C16/272 ,  C23C16/277 ,  C23C16/507 ,  C23C8/36 ,  H01J37/321 ,  H01J37/32458 ,  H01J37/32522

摘要： A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled. Also provided is an axially-extending array of current-carrying conductors which at least partially encircle the chamber, are transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber, and a power supply connected to the conductor array and adapted to provide high-frequency current in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber, and wherein the work surface is exposed to the plasma sheath and extends in the direction of the longitudinal axis.

公开(公告)号：US6105518A

公开(公告)日：2000-08-22

申请号：US885720

申请日：1997-06-30

申请人： Anthony E. Robson ,  Ronald A. Rudder ,  Robert C. Hendry ,  Moses M. David ,  James V. Burt

发明人： Anthony E. Robson ,  Ronald A. Rudder ,  Robert C. Hendry ,  Moses M. David ,  James V. Burt

IPC分类号： H05H1/46 ,  C23C8/36 ,  C23C16/27 ,  C23C16/50 ,  C23C16/507 ,  C30B29/04 ,  H01J37/32 ,  H01L21/31 ,  H05H1/00

CPC分类号： C23C16/272 ,  C23C16/277 ,  C23C16/507 ,  C23C8/36 ,  H01J37/321 ,  H01J37/32458 ,  H01J37/32522

摘要： A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled. Also provided is an axially-extending array of current-carrying conductors which at least partially encircle the chamber, are transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber, and a power supply connected to the conductor array and adapted to provide high-frequency current in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber, and wherein the work surface is exposed to the plasma sheath and extends in the direction of the longitudinal axis.

摘要翻译： 一种用于处理工作表面的方法和设备，其中设置有具有纵向轴线和纵向延伸的导电侧壁的室，至少一个侧壁具有至少一个纵向延伸的间隙，其中断通过横向于纵向的侧壁的电流路径 轴，并且其中所述室被密封以允许控制所述室内的压力。 还提供了轴向延伸的载流导体阵列，其至少部分地环绕腔室，横向于纵向轴线，并且建立平行于腔室的纵向轴线的磁场，以及连接到导体的电源 阵列并且适于在导体中提供高频电流以磁性地诱导腔室中的气态材料的电离，并形成等离子体护套，其围绕并沿着纵向轴线延伸并且与腔的侧壁一致并且其中工作表面 暴露于等离子体护套并沿着纵向轴线的方向延伸。

公开(公告)号：US06514605B2

公开(公告)日：2003-02-04

申请号：US09883315

申请日：2001-06-19

申请人： Ronald A. Rudder ,  Raymond E. Thomas

发明人： Ronald A. Rudder ,  Raymond E. Thomas

IPC分类号： B32B1800

CPC分类号： C23C24/10 ,  A47J27/002 ,  C23C26/02 ,  C23C30/005 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/30

摘要： A method for producing a durable, non-stick, diamond-tiled implement and the diamond-tiled implement thereby produced. Diamond particles are distributed on a surface of a workpiece containing a ceramic binder. The ceramic binder on the surface of the workpiece is heated to above its glass temperature to fuse the diamond particles in and onto the workpiece. The workpiece is then cooled so that the diamond particles are bonded to and at least partially embedded in the ceramic binder at the surface of the workpiece to produce durable, non-stick, diamond-tiled implements including cookware, bakeware, hot-presses, ski surfaces, skid surfaces, marine articles, and mechanical polishing wheels. Other implements of this invention utilize a high diamond content to produce thermally conducting and electrically insulating coatings for heat spreaders, or conversely, heaters.

摘要翻译： 一种用于生产耐用的，不粘的金刚石工具和由此生产的金刚石镶嵌工具的方法。 金刚石颗粒分布在包含陶瓷粘合剂的工件的表面上。 将工件表面上的陶瓷粘合剂加热到其玻璃化温度以上以将金刚石颗粒熔合在工件上和工件上。 然后将工件冷却，使得金刚石颗粒在工件的表面处结合并且至少部分地嵌入陶瓷粘合剂中，以产生耐用的不粘金钻石工具，包括炊具，烤盘，热压机，滑雪 表面，滑动表面，海洋制品和机械抛光轮。 本发明的其它工具利用高金刚石含量来产生用于散热器或相反地加热器的导热和电绝缘涂层。

公开(公告)号：US06258418B1

公开(公告)日：2001-07-10

申请号：US09338485

申请日：1999-06-23

申请人： Ronald A. Rudder ,  Raymond E. Thomas

发明人： Ronald A. Rudder ,  Raymond E. Thomas

IPC分类号： G05D106

CPC分类号： C23C24/10 ,  A47J27/002 ,  C23C26/02 ,  C23C30/005 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/30

摘要： A method for producing a durable, non-stick, diamond-tiled implement and the diamond-tiled implement thereby produced. Diamond particles are distributed on a surface of a workpiece containing a ceramic binder. The ceramic binder on the surface of the workpiece is heated to above its glass temperature to fuse the diamond particles in and onto the workpiece. The workpiece is then cooled so that the diamond particles are bonded to and at least partially embedded in the ceramic binder at the surface of the workpiece to produce durable, non-stick, diamond-tiled implements including cookware, bakeware, hot-presses, ski surfaces, skid surfaces, marine articles, and mechanical polishing wheels. Other implements of this invention utilize a high diamond content to produce thermally conducting and electrically insulating coatings for heat spreaders or heaters.

摘要翻译： 一种用于生产耐用的，不粘的金刚石工具和由此生产的金刚石镶嵌工具的方法。 金刚石颗粒分布在包含陶瓷粘合剂的工件的表面上。 将工件表面上的陶瓷粘合剂加热到其玻璃化温度以上以将金刚石颗粒熔合在工件上和工件上。 然后将工件冷却，使得金刚石颗粒在工件的表面处结合并且至少部分地嵌入陶瓷粘合剂中，以产生耐用的不粘金钻石工具，包括炊具，烤盘，热压机，滑雪 表面，滑动表面，海洋制品和机械抛光轮。 本发明的其它工具利用高金刚石含量来制造用于散热器或加热器的导热和电绝缘涂层。