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    PLANAR PROGRAMMABLE METALLIZATION MEMORY CELLS
    1.
    发明申请
    PLANAR PROGRAMMABLE METALLIZATION MEMORY CELLS 有权
    平面可编程金属化记忆细胞

    公开(公告)号：US20100072448A1

    公开(公告)日：2010-03-25

    申请号：US12233770

    申请日：2008-09-19

    申请人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    发明人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1658

    摘要： Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters extending from the inert electrode to the active electrode. A metal layer extends from the inert electrode to the active electrode, yet is electrically insulated from each of the inert electrode and the active electrode by the fast ion conductor material. Methods for forming programmable metallization cells are also disclosed.

    摘要翻译： 具有惰性电极和有源电极的可编程金属化存储单元相对于衬底以非重叠的方式定位。 快速离子导体材料与惰性电极电接触并延伸到有源电极，快速离子导体包括从惰性电极延伸到有源电极的超离子簇。 金属层从惰性电极延伸到有源电极，但是通过快速离子导体材料与惰性电极和有源电极中的每一个电绝缘。 还公开了用于形成可编程金属化电池的方法。

    Planar programmable metallization memory cells
    2.
    发明授权
    Planar programmable metallization memory cells 有权
    平面可编程金属化存储单元

    公开(公告)号：US07847278B2

    公开(公告)日：2010-12-07

    申请号：US12233770

    申请日：2008-09-19

    申请人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    发明人： Antoine Khoueir ,  Haiwen Xi ,  Shuiyuan Huang

    IPC分类号： H01L47/00

    CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1658

    摘要： Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters extending from the inert electrode to the active electrode. A metal layer extends from the inert electrode to the active electrode, yet is electrically insulated from each of the inert electrode and the active electrode by the fast ion conductor material. Methods for forming programmable metallization cells are also disclosed.

    摘要翻译： 具有惰性电极和有源电极的可编程金属化存储单元相对于衬底以非重叠的方式定位。 快速离子导体材料与惰性电极电接触并延伸到有源电极，快速离子导体包括从惰性电极延伸到有源电极的超离子簇。 金属层从惰性电极延伸到有源电极，但是通过快速离子导体材料与惰性电极和有源电极中的每一个电绝缘。 还公开了用于形成可编程金属化电池的方法。

    Active Protection Device for Resistive Random Access Memory (RRAM) Formation
    4.
    发明申请
    Active Protection Device for Resistive Random Access Memory (RRAM) Formation 有权
    用于电阻随机存取存储器（RRAM）形成的主动保护装置

    公开(公告)号：US20110007552A1

    公开(公告)日：2011-01-13

    申请号：US12502224

    申请日：2009-07-13

    申请人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

    发明人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

    IPC分类号： G11C11/00 ,  G11C5/14

    CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C13/0059 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/78 ,  G11C2213/79

    摘要： Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level

    摘要翻译： 在用于准备用于正常读写操作的单元的RRAM形成过程期间，向电阻随机存取存储器（RRAM）单元提供过电流保护的装置和方法。 根据各种实施例，RRAM单元连接在第一控制线和第二控制线之间，并且主动保护装置（APD）连接在第二控制线和电接地端之间。 通过RRAM单元施加形成电流，并且激活电压同时施加到APD以将形成电流的最大幅度维持在预定阈值水平以下

    Active protection device for resistive random access memory (RRAM) formation
    6.
    发明授权
    Active protection device for resistive random access memory (RRAM) formation 有权
    用于电阻随机存取存储器（RRAM）形成的主动保护装置

    公开(公告)号：US07965538B2

    公开(公告)日：2011-06-21

    申请号：US12502224

    申请日：2009-07-13

    申请人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

    发明人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C13/0059 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/78 ,  G11C2213/79

    摘要： Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level.

    摘要翻译： 在用于准备用于正常读写操作的单元的RRAM形成过程期间，向电阻随机存取存储器（RRAM）单元提供过电流保护的装置和方法。 根据各种实施例，RRAM单元连接在第一控制线和第二控制线之间，并且主动保护装置（APD）连接在第二控制线和电接地端之间。 通过RRAM单元施加形成电流，并且将激活电压同时施加到APD以将形成电流的最大幅度维持在预定阈值水平以下。

    CELL PATTERNING WITH MULTIPLE HARD MASKS
    7.
    发明申请
    CELL PATTERNING WITH MULTIPLE HARD MASKS 审中-公开
    细胞图案与多个硬掩模

    公开(公告)号：US20100327248A1

    公开(公告)日：2010-12-30

    申请号：US12493281

    申请日：2009-06-29

    申请人： Antoine Khoueir ,  Shuiyuan Huang ,  Andrew Habermas ,  Helena Stadniychuk ,  Ivan P. Ivanov ,  Yongchul Ahn

    发明人： Antoine Khoueir ,  Shuiyuan Huang ,  Andrew Habermas ,  Helena Stadniychuk ,  Ivan P. Ivanov ,  Yongchul Ahn

    IPC分类号： H01L47/00

    CPC分类号： H01L43/12

    摘要： A method of making a memory cell or magnetic element by using two hard masks. The method includes first patterning a second hard mask to form a reduced second hard mask, with a first hard mask being an etch stop for the patterning process, and then patterning the first hard mask to form a reduced first hard mask by using the reduced second hard mask as a mask and using an etch stop layer as an etch stop. After patterning both hard masks, then patterning a functional layer by using the reduced first hard mask as a mask. In the resulting memory cell, the first hard mask layer is also a top lead, and the diameter of the first hard mask layer is at least essentially the same as the diameter of the etch stop layer, the adhesion layer, and the functional layer.

    摘要翻译： 通过使用两个硬掩模制造存储器单元或磁性元件的方法。 该方法包括首先构图第二硬掩模以形成还原的第二硬掩模，其中第一硬掩模是用于图案化工艺的蚀刻停止，然后通过使用所述还原的第二硬掩模来形成第一硬掩模以形成减小的第一硬掩模 硬掩模作为掩模，并使用蚀刻停止层作为蚀刻停止。 在图案化两个硬掩模之后，然后通过使用还原的第一硬掩模作为掩模来图案化功能层。 在所得到的存储单元中，第一硬掩模层也是顶部引线，并且第一硬掩模层的直径至少基本上与蚀刻停止层，粘附层和功能层的直径相同。