Method for fabricating masters for imprint lithography and related imprint process
    2.
    发明申请
    Method for fabricating masters for imprint lithography and related imprint process 审中-公开
    制作压印光刻技术的方法及相关压印工艺

    公开(公告)号:US20050074697A1

    公开(公告)日:2005-04-07

    申请号:US10945598

    申请日:2004-09-21

    IPC分类号: B29C33/38 G03C1/76 G03F7/00

    摘要: Masters for imprint processes are produced by providing a resist layer, and patterning the resist layer after a respective mold pattern to produce a patterned resist layer adapted to be directly used as a master for imprint lithography. Preferably the resist is spin cast on a substrate and is comprised of a photoresist, such as negative-tone, electron-beam sensitive resist having a glass transition temperature above 200° C. and adapted to be mechanically stable to pressures up to 104 psi. Preferably, the resist is a polymer resist, such as an epoxy resist e.g. SU8 and SU8-2000. Patterning the resist layer includes the steps of structuring the resist layer, soft-baking the structured resist layer in order to selectively cross-link the structured portion of the structured resist layer and developing the structured resist layer in order to receive a patterned resist layer. The patterned resist layer is preferably cured e.g. by hard-bake curing in order to increase at least one of the mechanical stability and the glass transition temperature of said patterned resist layer. Structuring may be performed by optical lithography or electron beam lithography.

    摘要翻译: 通过提供抗蚀剂层,并在相应的模具图案之后对抗蚀剂层进行图案化以产生适于直接用作压印光刻的母版的图案化抗蚀剂层来制造压印工艺的主体。 优选地,将抗蚀剂旋涂在基底上,并且由光致抗蚀剂,例如具有玻璃化转变温度高于200℃的负色调电子束敏感抗蚀剂组成,并适于机械稳定至高达10 4的压力 > psi。 优选地,抗蚀剂是聚合物抗蚀剂,例如环氧树脂抗蚀剂。 SU8和SU8-2000。 抗蚀剂层的图形化包括以下步骤:构建抗蚀剂层,软化烘焙结构化抗蚀剂层,以选择性地交联结构化抗蚀剂层的结构化部分并显影结构化抗蚀剂层以便接收图案化的抗蚀剂层。 图案化的抗蚀剂层优选固化,例如 通过硬烘烤固化以增加所述图案化抗蚀剂层的机械稳定性和玻璃化转变温度中的至少一个。 结构化可以通过光学光刻或电子束光刻进行。