公开(公告)号：US20020173167A1

公开(公告)日：2002-11-21

申请号：US09818359

申请日：2001-03-26

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/469

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

摘要翻译： 本发明的方法和装置以这样的方式沉积氟化硅酸盐玻璃（FSG），使得它强烈地粘附到上覆的或下面的阻挡层或蚀刻停止层，并具有较低的介电常数以及其它益处。 在一个实施方案中，使用四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体，其中氧与硅的比例控制在约2:1至6:1之间。 这种O 2水平有助于减少陶瓷室组分的降解量，否则由工艺配方消除硅烷引起。

公开(公告)号：US20030064556A1

公开(公告)日：2003-04-03

申请号：US10283996

申请日：2002-10-30

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/8238

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

公开(公告)号：US20030183243A1

公开(公告)日：2003-10-02

申请号：US10109736

申请日：2002-03-29

申请人： Applied Materials, Inc.

发明人： Alan W. Collins ,  Feng Gao ,  Tetsuya Ishikawa ,  Padmanaban Krishnaraj ,  Yaxin Wang

IPC分类号： B08B003/12

CPC分类号： H01J37/32862 ,  B08B7/00 ,  C23C14/564 ,  C23C16/4405 ,  Y10S438/905 ,  Y10S438/906

摘要： In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.

摘要翻译： 在清洗在基板处理室的表面上形成的工艺残留物的方法中，将包括牺牲材料的牺牲基板放置在室中，将溅射气体引入室中，并且将溅射气体通电以将牺牲材料从 底物。 溅射的牺牲材料与室表面上的残留物反应以清洁它们。 在一个版本中，牺牲衬底包括含硅材料，当溅射时，在室壁上沉积硅，其通过室清洁过程与留下的含氟物质反应并清除含氟物质。