公开(公告)号：US20030064556A1

公开(公告)日：2003-04-03

申请号：US10283996

申请日：2002-10-30

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/8238

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

公开(公告)号：US20020173167A1

公开(公告)日：2002-11-21

申请号：US09818359

申请日：2001-03-26

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/469

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

摘要翻译： 本发明的方法和装置以这样的方式沉积氟化硅酸盐玻璃（FSG），使得它强烈地粘附到上覆的或下面的阻挡层或蚀刻停止层，并具有较低的介电常数以及其它益处。 在一个实施方案中，使用四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体，其中氧与硅的比例控制在约2:1至6:1之间。 这种O 2水平有助于减少陶瓷室组分的降解量，否则由工艺配方消除硅烷引起。

公开(公告)号：US20020127350A1

公开(公告)日：2002-09-12

申请号：US09800798

申请日：2001-03-07

申请人： Applied Materials, Inc.

发明人： Tetsuya Ishikawa ,  Kaveh Niazi ,  Tsutomu Tanaka ,  Canfeng Lai ,  Robert Duncan

IPC分类号： C23C016/00 ,  C23C014/00

CPC分类号： C23C16/45508 ,  C23C16/507 ,  C23C16/52

摘要： A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.

摘要翻译： 提供了一种用于在等离子体沉积工艺期间在处理室中在衬底上形成层的方法和装置。 在处理室中形成等离子体，具有适于沉积层的前体气体的工艺气体流入处理室，并且具有小于约0.5高斯的强度的磁场在处理室内衰减。 这种磁场的衰减导致在沉积期间实现的工艺均匀度的改善。