公开(公告)号：US20020173167A1

公开(公告)日：2002-11-21

申请号：US09818359

申请日：2001-03-26

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/469

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

摘要翻译： 本发明的方法和装置以这样的方式沉积氟化硅酸盐玻璃（FSG），使得它强烈地粘附到上覆的或下面的阻挡层或蚀刻停止层，并具有较低的介电常数以及其它益处。 在一个实施方案中，使用四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体，其中氧与硅的比例控制在约2:1至6:1之间。 这种O 2水平有助于减少陶瓷室组分的降解量，否则由工艺配方消除硅烷引起。

公开(公告)号：US20030064556A1

公开(公告)日：2003-04-03

申请号：US10283996

申请日：2002-10-30

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/8238

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

公开(公告)号：US20020168840A1

公开(公告)日：2002-11-14

申请号：US09853349

申请日：2001-05-11

申请人： Applied Materials, Inc.

发明人： Soonil Hong ,  Hyungsuk Alexander Yoon ,  Chiliang Chen ,  Kimberly Branshaw

IPC分类号： H01L021/20

CPC分类号： C23C16/42

摘要： A method of forming tungsten suicide (WSix) films is provided. The tungsten suicide (WSix) films are formed by reacting a tungsten source with a silicon source at a temperature greater than about 600null C. The as-deposited tungsten suicide (WSix) layer has a resistivity less than about 60 nullnull-cm.

摘要翻译： 提供了形成硅化钨（WSix）膜的方法。 钨硅化物（WSix）膜通过在大于约600℃的温度下使钨源与硅源反应形成。沉积的硅化钨（WSix）层的电阻率小于约60μOMEGA-cm。