公开(公告)号：US09546419B2

公开(公告)日：2017-01-17

申请号：US13968144

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： Amit Khandelwal ,  Avgerinos V. Gelatos

IPC: C23C16/06 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455

CPC classification number: C23C16/0281 ,  C23C16/14 ,  C23C16/45525

Abstract: Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow.

Abstract translation: 本文公开了用于控制体钨层中的晶体尺寸的方法。 用于沉积体钨金属层的方法可以包括将具有阻挡层的基板定位在处理室中，形成钨成核层，用包括活化气体和吹扫气体的一个或多个处理气体循环后处理成核层， 将衬底加热至沉积温度，并在成核层上沉积具有交替氮气流的体钨层。 后处理循环可以任选地应用于具有交替氮气流的块状金属沉积。

公开(公告)号：US20140273451A1

公开(公告)日：2014-09-18

申请号：US13914738

申请日：2013-06-11

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. Wang ,  Amit Khandelwal ,  Avegerinos V. Gelatos ,  Joshua Collins ,  Kedar Sapre ,  Nitin K. Ingle

IPC: H01L21/285

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/14 ,  C23C16/56 ,  H01L21/28556

Abstract: Methods of filling gaps with tungsten are described. The methods include a tungsten dep-etch-dep sequence to enhance gapfilling yet avoid difficulty in restarting deposition after the intervening etch. The first tungsten deposition may have a nucleation layer or seeding layer to assist growth of the first tungsten deposition. Restarting deposition with a less-than-conductive nucleation layer would impact function of an integrated circuit, and therefore avoiding tungsten “poisoning” during the etch is desirable. The etching step may be performed using a plasma to excite a halogen-containing precursor while the substrate at relatively low temperature (near room temperature or less). The plasma may be local or remote. Another method may be used in combination or separately and involves the introduction of a source of oxygen into the plasma in combination with the halogen-containing precursor.

Abstract translation: 描述了用钨填充间隙的方法。 这些方法包括用于增强间隙填充的钨去蚀刻 - 去除序列，但是避免在中间蚀刻之后重新开始沉积的困难。 第一钨沉积可以具有成核层或接种层以帮助第一钨沉积的生长。 用不太导电的成核层重新开始沉积将影响集成电路的功能，因此避免在蚀刻期间的钨“中毒”。 可以使用等离子体来进行蚀刻步骤，以在较低温度（接近室温或更低温度）的衬底下激发含卤素的前体。 等离子体可能是本地或远程的。 另一种方法可以组合使用或单独使用，并且涉及将氧源引入与含卤素前体组合的等离子体中。

公开(公告)号：US09275865B2

公开(公告)日：2016-03-01

申请号：US14068301

申请日：2013-10-31

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. Wang ,  Joshua Collins ,  Michael Jackson ,  Avgerinos V. Gelatos ,  Amit Khandelwal

IPC: H01L21/322 ,  H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/0227 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for plasma treatment of films to remove impurities are disclosed herein. Methods for removing impurities can include positioning a substrate with a barrier layer in a processing chamber, the barrier layer comprising a barrier metal and one or more impurities, maintaining the substrate at a bias, creating a plasma comprising a treatment gas, the treatment gas comprising an inert gas, delivering the treatment gas to the substrate to reduce the ratio of one or more impurities in the barrier layer, and reacting a deposition gas comprising a metal halide and hydrogen-containing gas to deposit a bulk metal layer on the barrier layer. The methods can further include the use of diborane to create selective nucleation in features over surface regions of the substrate.

Abstract translation: 本文公开了等离子体处理膜以去除杂质的方法。 用于去除杂质的方法可以包括将具有阻挡层的衬底定位在处理室中，阻挡层包含阻挡金属和一种或多种杂质，保持衬底处于偏压状态，产生包含处理气体的等离子体，所述处理气体包括 惰性气体，将处理气体输送到基板以减少阻挡层中的一种或多种杂质的比例，以及使包含金属卤化物和含氢气体的沉积气体在阻挡层上沉积体金属层。 该方法还可以包括使用乙硼烷在基材的表面区域上产生特征的选择性成核。