公开(公告)号：US09275865B2

公开(公告)日：2016-03-01

申请号：US14068301

申请日：2013-10-31

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. Wang ,  Joshua Collins ,  Michael Jackson ,  Avgerinos V. Gelatos ,  Amit Khandelwal

IPC: H01L21/322 ,  H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/0227 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for plasma treatment of films to remove impurities are disclosed herein. Methods for removing impurities can include positioning a substrate with a barrier layer in a processing chamber, the barrier layer comprising a barrier metal and one or more impurities, maintaining the substrate at a bias, creating a plasma comprising a treatment gas, the treatment gas comprising an inert gas, delivering the treatment gas to the substrate to reduce the ratio of one or more impurities in the barrier layer, and reacting a deposition gas comprising a metal halide and hydrogen-containing gas to deposit a bulk metal layer on the barrier layer. The methods can further include the use of diborane to create selective nucleation in features over surface regions of the substrate.

Abstract translation: 本文公开了等离子体处理膜以去除杂质的方法。 用于去除杂质的方法可以包括将具有阻挡层的衬底定位在处理室中，阻挡层包含阻挡金属和一种或多种杂质，保持衬底处于偏压状态，产生包含处理气体的等离子体，所述处理气体包括 惰性气体，将处理气体输送到基板以减少阻挡层中的一种或多种杂质的比例，以及使包含金属卤化物和含氢气体的沉积气体在阻挡层上沉积体金属层。 该方法还可以包括使用乙硼烷在基材的表面区域上产生特征的选择性成核。

公开(公告)号：US20140087091A1

公开(公告)日：2014-03-27

申请号：US13625229

申请日：2012-09-24

Applicant: Applied Materials, Inc.

Inventor： Hyman W.H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  San H. Yu

IPC: B05B1/14 ,  C23C16/34

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Abstract translation: 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US09017776B2

公开(公告)日：2015-04-28

申请号：US13625229

申请日：2012-09-24

Applicant: Applied Materials, Inc.

Inventor： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC: H05H1/24 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Abstract translation: 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。