公开(公告)号：US20240123565A1

公开(公告)日：2024-04-18

申请号：US18240587

申请日：2023-08-31

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Andrew Siordia

IPC: B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  G01B7/06

CPC classification number: B24B37/005 ,  B24B37/042 ,  B24B37/10 ,  G01B7/10

Abstract: A method of chemical mechanical polishing includes bringing a conductive layer of a substrate into contact with a polishing pad, supplying a polishing liquid to the polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, and determining a sequence of thickness values for the conductive layer based on the sequence of signal values. Determining the sequence of thickness values includes at least partially compensating for a contribution of the polishing liquid to the signal values.

公开(公告)号：US11597052B2

公开(公告)日：2023-03-07

申请号：US16448980

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Hari Soundararajan ,  Shou-Sung Chang ,  Haosheng Wu ,  Jianshe Tang ,  Jeonghoon Oh ,  Rajeev Bajaj ,  Andrew Siordia

IPC: B24B49/00 ,  B24B37/015 ,  B24B37/20 ,  B24B57/02 ,  B24B37/27 ,  G05D23/24

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

公开(公告)号：US11794302B2

公开(公告)日：2023-10-24

申请号：US17122819

申请日：2020-12-15

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Andrew Siordia

IPC: B24B37/005 ,  B24B37/10 ,  B24B37/04 ,  G01B7/06

CPC classification number: B24B37/005 ,  B24B37/042 ,  B24B37/10 ,  G01B7/10

Abstract: A method of chemical mechanical polishing includes bringing a conductive layer of a substrate into contact with a polishing pad, supplying a polishing liquid to the polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, and determining a sequence of thickness values for the conductive layer based on the sequence of signal values. Determining the sequence of thickness values includes at least partially compensating for a contribution of the polishing liquid to the signal values.

公开(公告)号：US20220184770A1

公开(公告)日：2022-06-16

申请号：US17122819

申请日：2020-12-15

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Andrew Siordia

IPC: B24B37/005 ,  G01B7/06 ,  B24B37/04 ,  B24B37/10

Abstract: A method of chemical mechanical polishing includes bringing a conductive layer of a substrate into contact with a polishing pad, supplying a polishing liquid to the polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, and determining a sequence of thickness values for the conductive layer based on the sequence of signal values. Determining the sequence of thickness values includes at least partially compensating for a contribution of the polishing liquid to the signal values.

公开(公告)号：US20250114910A1

公开(公告)日：2025-04-10

申请号：US18905005

申请日：2024-10-02

Applicant: Applied Materials, Inc.

Inventor： Priscilla Diep LaRosa ,  Haosheng Wu ,  Jeonghoon Oh ,  Andrew Siordia ,  Taketo Sekine ,  Shou-Sung Chang ,  Jianshe Tang

IPC: B24B57/02 ,  B24B37/30 ,  B24B41/06 ,  B24B49/04

Abstract: A method of fabrication of a substrate includes, after deposition of an outer layer on a substrate and before polishing of an exposed surface of the outer layer of the substrate, performing a hydroblasting treatment of a selected portion of the exposed surface by directing a treatment liquid from a nozzle at a sufficiently high velocity onto the selected portion to remove material from the selected portion such that a thickness non-uniformity of the outer layer is reduced. Then the outer layer of the treated substrate is subject to chemical mechanical polishing to planarize and reduce a thickness of the outer layer.

公开(公告)号：US20230029290A1

公开(公告)日：2023-01-26

申请号：US17960074

申请日：2022-10-04

Applicant: Applied Materials, Inc.

Inventor： Hari Soundararajan ,  Shou-Sung Chang ,  Haosheng Wu ,  Jianshe Tang ,  Jeonghoon Oh ,  Rajeev Bajaj ,  Andrew Siordia

IPC: B24B37/015 ,  B24B37/20 ,  B24B57/02 ,  B24B37/27 ,  G05D23/24

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.