摘要:
The invention relates to an electrostatic suction cup device for wafer chemical mechanical polishing, which mainly includes a wafer carrier having a suction surface from an upper end thereof; an electrostatic suction cup arranged at the corresponding suction surface in the wafer carrier; and a control module connected to the electrostatic suction cup so that the electrostatic suction cup can be controlled by the control module to generate static electricity to adsorb the wafer to the suction surface for chemical-mechanical polishing operations. Hence, wafers can be steadily absorbed without being affected by wafer thickness to improve yield and process improvement, can remove the time and cost of gluing and film application process corresponding to strengthening the wafer strength before the wafer process, can avoid the procedure, cost and risk of debonding and film removal after the process, and can increase the practical efficacy characteristics in its overall implementation.
摘要:
A lapping device for gear helix artifact with equal common normal by rolling method, use the rotary table to accurately control the angle between the lapping surface of whetstone and the axis of the base-circle cylinder to control the helix angle of base-circle about the involute helicoid. Use the whetstone driven component to drive the whetstone to make a high-precision linear motion in the vertical direction to adjust the position of the lapping surface of whetstone. The distance between the two lapping surface of whetstone is precisely adjusted by the gauge block to control the processing length of the three tooth common normal of the gear helix artifact. The invention provides a lapping device for gear helix artifact with equal common normal by rolling method, it conforms to the generation principle of the involute helicoid, and there is no machining principle error.
摘要:
A polishing apparatus includes a polishing device, a polishing fixing device, and a controller. The polishing fixing device includes a rotating mechanism, a sensor, a movement compensation assembly, a first moving assembly and a second moving assembly. The sensor in the polishing fixing device senses pressure applied to the workpiece during polishing, the movement compensation assembly can drive the rotating mechanism to move in compensation, so as to keep the polishing pressure within a certain range for uniformity in polishing, improving the polishing quality and production efficiency of the workpiece.
摘要:
The present invention discloses a wafer polishing device, which comprises a second pressure medium cavity for detecting pressure changes; a porous disc with a plurality of through holes, and its lower surface is covered with a flexible single cavity film; a conduction valve unit for conduction or isolation between the second pressure medium cavity and the third pressure medium cavity, which at least includes a conduction valve seat, a conduction valve and an elastic part. The lower end of the conduction valve seat extends into the through hole, and protrudes from the lower end face of the conduction valve seat; The conduction valve seat, the porous disc and the covered flexible single cavity membrane combined to form the third pressure medium cavity; a first pressure medium cavity.
摘要:
A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone is generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.
摘要:
Disclosed herein is a carrying mechanism that carries a plate-shaped workpiece in which a substrate larger than a wafer in area is stacked on a lower surface of the wafer. The carrying mechanism includes a carrying pad for covering an upper surface of the wafer, holding sections for holding the substrate on outside of the outer periphery of the wafer, and a water supply source for supplying water to the wafer. The carrying mechanism forms a predetermined gap between the lower surface of the carrying pad and the upper surface of the wafer, and carries the plate-shaped workpiece in a condition where the gap is supplied with a predetermined amount of water.
摘要:
Systems and methods for correcting read/write overlay errors in the manufacture of magnetic transducers for storage drives are provided. One such system includes a twisting tool configured to receive and secure a row bar having an elongated rectangular block shape and including a plurality of magnetic transducers spaced apart along a length of the row bar, and where the twisting tool is configured to twist the row bar at a plurality of areas along the length of the row bar.
摘要:
Systems and methods for correcting read/write overlay errors in the manufacture of magnetic transducers for storage drives are provided. One such system includes a twisting tool configured to receive and secure a row bar having an elongated rectangular block shape and including a plurality of magnetic transducers spaced apart along a length of the row bar, and where the twisting tool is configured to twist the row bar at a plurality of areas along the length of the row bar.
摘要:
Methods, non-transitory computer readable media, and systems are provided for detecting an endpoint of a chemical mechanical planarization (CMP) process on a semiconductor substrate. The method comprises generating a reference signal, generating a first signal with which to control a CMP system, generating a second signal using a combination of the first signal and the reference signal, commanding the CMP system with the second signal, generating a response signal that indicates an operational characteristic of the CMP system that is responsive to the second signal and a friction property of the semiconductor substrate, and filtering the response signal using the reference signal to determine the endpoint of the CMP process.
摘要:
A retainer ring of a chemical mechanical polishing apparatus includes a base portion having a ring shape, the base portion including a pressurizing surface and a combining surface opposite the pressurizing surface, slurry inflowing portions on the pressurizing surface of the base portion, the slurry inflowing portions having groove shapes, and minute grooves at least on a surface portion of the slurry inflowing portions.