ELECTROSTATIC SUCTION CUP DEVICE FOR WAFER CHEMICAL MECHANICAL POLISHING

    公开(公告)号:US20240286244A1

    公开(公告)日:2024-08-29

    申请号:US18538398

    申请日:2023-12-13

    发明人: YAO-SUNG WEI

    IPC分类号: B24B37/27 H02N13/00

    CPC分类号: B24B37/27 H02N13/00

    摘要: The invention relates to an electrostatic suction cup device for wafer chemical mechanical polishing, which mainly includes a wafer carrier having a suction surface from an upper end thereof; an electrostatic suction cup arranged at the corresponding suction surface in the wafer carrier; and a control module connected to the electrostatic suction cup so that the electrostatic suction cup can be controlled by the control module to generate static electricity to adsorb the wafer to the suction surface for chemical-mechanical polishing operations. Hence, wafers can be steadily absorbed without being affected by wafer thickness to improve yield and process improvement, can remove the time and cost of gluing and film application process corresponding to strengthening the wafer strength before the wafer process, can avoid the procedure, cost and risk of debonding and film removal after the process, and can increase the practical efficacy characteristics in its overall implementation.

    A LAPPING DEVICE FOR GEAR HELIX ARTIFACT WITH EQUAL COMMON NORMAL BY ROLLING METHOD

    公开(公告)号:US20230182260A1

    公开(公告)日:2023-06-15

    申请号:US17780745

    申请日:2021-06-30

    IPC分类号: B24B37/02 B24B37/27 B23F1/02

    CPC分类号: B24B37/02 B23F1/02 B24B37/27

    摘要: A lapping device for gear helix artifact with equal common normal by rolling method, use the rotary table to accurately control the angle between the lapping surface of whetstone and the axis of the base-circle cylinder to control the helix angle of base-circle about the involute helicoid. Use the whetstone driven component to drive the whetstone to make a high-precision linear motion in the vertical direction to adjust the position of the lapping surface of whetstone. The distance between the two lapping surface of whetstone is precisely adjusted by the gauge block to control the processing length of the three tooth common normal of the gear helix artifact. The invention provides a lapping device for gear helix artifact with equal common normal by rolling method, it conforms to the generation principle of the involute helicoid, and there is no machining principle error.

    WAFER POLISHING DEVICE
    4.
    发明申请

    公开(公告)号:US20230122191A1

    公开(公告)日:2023-04-20

    申请号:US17578464

    申请日:2022-01-19

    摘要: The present invention discloses a wafer polishing device, which comprises a second pressure medium cavity for detecting pressure changes; a porous disc with a plurality of through holes, and its lower surface is covered with a flexible single cavity film; a conduction valve unit for conduction or isolation between the second pressure medium cavity and the third pressure medium cavity, which at least includes a conduction valve seat, a conduction valve and an elastic part. The lower end of the conduction valve seat extends into the through hole, and protrudes from the lower end face of the conduction valve seat; The conduction valve seat, the porous disc and the covered flexible single cavity membrane combined to form the third pressure medium cavity; a first pressure medium cavity.

    Real time profile control for chemical mechanical polishing

    公开(公告)号:US10562148B2

    公开(公告)日:2020-02-18

    申请号:US15727288

    申请日:2017-10-06

    摘要: A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone is generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.

    Processing apparatus
    6.
    发明授权

    公开(公告)号:US10279452B2

    公开(公告)日:2019-05-07

    申请号:US15720758

    申请日:2017-09-29

    申请人: DISCO CORPORATION

    发明人: Satoshi Yamanaka

    摘要: Disclosed herein is a carrying mechanism that carries a plate-shaped workpiece in which a substrate larger than a wafer in area is stacked on a lower surface of the wafer. The carrying mechanism includes a carrying pad for covering an upper surface of the wafer, holding sections for holding the substrate on outside of the outer periphery of the wafer, and a water supply source for supplying water to the wafer. The carrying mechanism forms a predetermined gap between the lower surface of the carrying pad and the upper surface of the wafer, and carries the plate-shaped workpiece in a condition where the gap is supplied with a predetermined amount of water.

    METHODS AND SYSTEMS FOR CHEMICAL MECHANICAL PLANARIZATION ENDPOINT DETECTION USING AN ALTERNATING CURRENT REFERENCE SIGNAL
    9.
    发明申请
    METHODS AND SYSTEMS FOR CHEMICAL MECHANICAL PLANARIZATION ENDPOINT DETECTION USING AN ALTERNATING CURRENT REFERENCE SIGNAL 审中-公开
    使用替代电流参考信号进行化学机械平面端点检测的方法和系统

    公开(公告)号:US20150371912A1

    公开(公告)日:2015-12-24

    申请号:US14311761

    申请日:2014-06-23

    摘要: Methods, non-transitory computer readable media, and systems are provided for detecting an endpoint of a chemical mechanical planarization (CMP) process on a semiconductor substrate. The method comprises generating a reference signal, generating a first signal with which to control a CMP system, generating a second signal using a combination of the first signal and the reference signal, commanding the CMP system with the second signal, generating a response signal that indicates an operational characteristic of the CMP system that is responsive to the second signal and a friction property of the semiconductor substrate, and filtering the response signal using the reference signal to determine the endpoint of the CMP process.

    摘要翻译: 提供了用于检测半导体衬底上的化学机械平面化(CMP)工艺的端点的方法,非暂时计算机可读介质和系统。 该方法包括生成参考信号,产生用于控制CMP系统的第一信号,使用第一信号和参考信号的组合产生第二信号,向CMP系统指示第二信号,产生响应信号,该响应信号 表示响应于第二信号和半导体衬底的摩擦特性的CMP系统的操作特性,并且使用参考信号对响应信号进行滤波以确定CMP过程的终点。

    RETAINER RINGS OF CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS OF MANUFACTURING THE SAME
    10.
    发明申请
    RETAINER RINGS OF CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS OF MANUFACTURING THE SAME 有权
    化学机械抛光装置的保持器环及其制造方法

    公开(公告)号:US20120309276A1

    公开(公告)日:2012-12-06

    申请号:US13478353

    申请日:2012-05-23

    申请人: Choon-Goang KIM

    发明人: Choon-Goang KIM

    摘要: A retainer ring of a chemical mechanical polishing apparatus includes a base portion having a ring shape, the base portion including a pressurizing surface and a combining surface opposite the pressurizing surface, slurry inflowing portions on the pressurizing surface of the base portion, the slurry inflowing portions having groove shapes, and minute grooves at least on a surface portion of the slurry inflowing portions.

    摘要翻译: 化学机械抛光装置的保持环包括具有环形的基部,基部包括加压表面和与加压表面相对的合并表面,基部的加压表面上的浆料流入部分,浆料流入部分 具有凹槽形状,以及至少在浆料流入部分的表面部分上的微小凹槽。