公开(公告)号：US20190393024A1

公开(公告)日：2019-12-26

申请号：US16401883

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Chentsau YING ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20190148144A1

公开(公告)日：2019-05-16

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Srinivas D. NEMANI ,  Chang KE ,  Lei ZHOU

IPC: H01L21/02 ,  H01L23/31 ,  B05D1/18

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.