公开(公告)号：US20190148144A1

公开(公告)日：2019-05-16

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Srinivas D. NEMANI ,  Chang KE ,  Lei ZHOU

IPC: H01L21/02 ,  H01L23/31 ,  B05D1/18

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US20240352577A1

公开(公告)日：2024-10-24

申请号：US18758099

申请日：2024-06-28

Applicant: Applied Materials, Inc.

Inventor： Chang KE ,  Wenyu ZHANG ,  Liqi WU

IPC: C23C16/18 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/08 ,  C23C16/45525

Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.