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公开(公告)号:US20190148144A1
公开(公告)日:2019-05-16
申请号:US16169610
申请日:2018-10-24
Applicant: Applied Materials, Inc.
Inventor: Biao LIU , Cheng PAN , Erica CHEN , Srinivas D. NEMANI , Chang KE , Lei ZHOU
Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.
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公开(公告)号:US20240352577A1
公开(公告)日:2024-10-24
申请号:US18758099
申请日:2024-06-28
Applicant: Applied Materials, Inc.
Inventor: Chang KE , Wenyu ZHANG , Liqi WU
IPC: C23C16/18 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/455
CPC classification number: C23C16/18 , C23C16/0281 , C23C16/04 , C23C16/08 , C23C16/45525
Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.
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