公开(公告)号：US20190393024A1

公开(公告)日：2019-12-26

申请号：US16401883

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Chentsau YING ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20190148144A1

公开(公告)日：2019-05-16

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Srinivas D. NEMANI ,  Chang KE ,  Lei ZHOU

IPC: H01L21/02 ,  H01L23/31 ,  B05D1/18

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US20160111373A1

公开(公告)日：2016-04-21

申请号：US14850069

申请日：2015-09-10

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Kang Sub YIM ,  Cheng PAN ,  Sure NGO ,  Taewan KIM ,  Alexandros T. DEMOS

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。