公开(公告)号：US20140231384A1

公开(公告)日：2014-08-21

申请号：US14177893

申请日：2014-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Brian Saxton UNDERWOOD ,  Abhijit Basu MALLICK ,  Nitin INGLE ,  Roman GOUK ,  Steven VERHAVERBEKE

IPC: G11B5/85

CPC classification number: G11B5/85 ,  G11B5/855

Abstract: Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate.

Abstract translation: 提供了用于形成图案化磁性基底的方法和装置。 在基板的磁性活性表面上形成图案化的抗蚀剂。 通过可流动的CVD工艺在图案化的抗蚀剂上形成氧化物层。 蚀刻氧化物层以暴露图案化抗蚀剂的部分。 然后使用蚀刻的氧化物层作为掩模蚀刻图案化的抗蚀剂，以暴露磁性活性表面的部分。 然后通过将能量引导通过经蚀刻的抗蚀剂层和经蚀刻的氧化物层（随后从衬底去除）来改变磁性活性表面的暴露部分的磁性。

公开(公告)号：US20180040473A1

公开(公告)日：2018-02-08

申请号：US15784834

申请日：2017-10-16

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton UNDERWOOD ,  Abhijit Basu MALLICK ,  Mukund SRINIVASAN ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01L21/02 ,  C23C16/48 ,  C23C16/56 ,  H01L21/324 ,  C23C16/40

CPC classification number: H01L21/0262 ,  C23C16/401 ,  C23C16/482 ,  C23C16/54 ,  C23C16/56 ,  H01J11/36 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/324

Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.

公开(公告)号：US20160336174A1

公开(公告)日：2016-11-17

申请号：US15112737

申请日：2015-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Brian Saxton UNDERWOOD ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/505 ,  C23C16/40 ,  H01J37/32 ,  C23C16/452

Abstract: A silicon and oxygen-containing film, such as a silicon dioxide film, is deposited in the absence of an oxidizer by introducing siloxane precursors into a plasma processing chamber and dissociating at least some of the Si—H bonds of the siloxane precursors by, for example, exposing the siloxane precursors to a low energy plasma. The silicon and oxygen-containing film may be formed on an oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and oxygen-containing film may serve as an initiation layer for a silicon dioxide bulk layer that is formed on top of the initiation layer using conventional silicon oxide deposition techniques, such as exposing the siloxane precursors to an oxygen-containing plasma. The initiation layer may be post-treated or cured to reduce the concentration of Si—H bonds prior to or after the deposition of the bulk layer.

Abstract translation: 通过将硅氧烷前体引入等离子体处理室中并将硅氧烷前体的至少一些Si-H键解离，通过在不存在氧化剂的情况下沉积硅和含氧膜，例如二氧化硅膜， 例如，将硅氧烷前体暴露于低能量等离子体。 可以在氧化容易发生的表面上形成硅和含氧膜，而不氧化易氧化的表面。 沉积的硅和含氧膜可以用作二氧化硅体层的起始层，其使用常规的氧化硅沉积技术形成在起始层的顶部，例如将硅氧烷前体暴露于含氧等离子体。 可以对引发层进行后处理或固化，以在堆积层沉积之前或之后降低Si-H键的浓度。