公开(公告)号：US20220328354A1

公开(公告)日：2022-10-13

申请号：US17847419

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Peng SUO ,  Ying W. WANG ,  Guan Huei SEE ,  Chang Bum YONG ,  Arvind SUNDARRAJAN

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/288 ,  H01L21/285 ,  H01L21/306

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.

公开(公告)号：US20240087958A1

公开(公告)日：2024-03-14

申请号：US18508801

申请日：2023-11-14

Applicant: Applied Materials, Inc.

Inventor： Peng SUO ,  Ying W. WANG ,  Guan Huei SEE ,  Chang Bum YONG ,  Arvind SUNDARRAJAN

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/288 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/76898 ,  H01L21/2855 ,  H01L21/288 ,  H01L21/30625 ,  H01L21/308

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.

公开(公告)号：US20220165621A1

公开(公告)日：2022-05-26

申请号：US16953869

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Peng SUO ,  Ying W. WANG ,  Guan Huei SEE ,  Chang Bum YONG ,  Arvind SUNDARRAJAN

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/306 ,  H01L21/285 ,  H01L21/288

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.

公开(公告)号：US20250062129A1

公开(公告)日：2025-02-20

申请号：US18450466

申请日：2023-08-16

Applicant: Applied Materials, Inc.

Inventor： Yin Wei LIM ,  Guan Huei SEE ,  Chang Bum YONG ,  Prayudi LIANTO ,  Arvind SUNDARRAJAN ,  Cheng SUN

IPC: H01L21/3065 ,  H01L23/00 ,  H01L25/065

Abstract: Embodiments of the disclosure include an apparatus and method of forming a backside profile in a semiconductor device that includes die-to-wafer bonding. The method generally includes removing a portion of a substrate layer included in a plurality of dies, the plurality of dies arranged on and bonded to an insulation layer included in a support structure, where the plurality of dies define a plurality of channels between adjacent dies, and forming a corner feature on a plurality of corners of the substrate layer adjacent to the plurality of channels. The use of a backside profile as described herein may mitigate the downstream process risks associated with trapped residue in the channels, and provide stress relief to the semiconductor device.

公开(公告)号：US20240379411A1

公开(公告)日：2024-11-14

申请号：US18315972

申请日：2023-05-11

Applicant: Applied Materials, Inc.

Inventor： Peng SOU ,  Chang Bum YONG ,  Guan Huei SEE ,  Arvind SUNDARRAJAN

IPC: H01L21/768 ,  G03F7/20 ,  G03F7/30

Abstract: Apparatus and methods for fabricating an electronic device are provided herein. Some embodiments include selectively delivering, according to a digital transfer pattern, an electromagnetic radiation beam provided from a light source across portions of an electromagnetic radiation sensitive layer that comprises a first photosensitive layer disposed on a surface of a substrate and a second photosensitive layer disposed on the first photosensitive layer. The electromagnetic beam may be delivered at a plurality of different dosing levels. The first and second photosensitive layers have first and second exposure sensitivities. Some embodiments also include performing, after selectively delivering the electromagnetic radiation beam, a developing and/or curing process on the first and second photosensitive layers to form a first and second set of features, respectively, which are to be filled with a conductor during a deposition process.