公开(公告)号：US20240110284A1

公开(公告)日：2024-04-04

申请号：US18372792

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： Lulu XIONG ,  Kevin Hsiao ,  Chris LIU ,  Chieh-Wen LO ,  Sean M. SEUTTER ,  Deenesh PADHI ,  Prayudi LIANTO ,  Peng SUO ,  Guan Huei SEE ,  Zongbin WANG ,  Shengwei ZENG ,  Balamurugan RAMASAMY

IPC: C23C16/505 ,  C23C16/04 ,  C23C16/32 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/505 ,  C23C16/045 ,  C23C16/325 ,  C23C16/56 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/3321

Abstract: A method of processing a substrate is disclosed which includes depositing a layer in a processing chamber on a field region, a sidewall region, and a fill region of a feature of the substrate, wherein a hardness of a portion of the layer deposited on the sidewall region is lower than a hardness of a portion of the layer deposited on the field region, and lower than a hardness of a portion of the layer deposited on the fill region.