公开(公告)号：US20180350563A1

公开(公告)日：2018-12-06

申请号：US15991877

申请日：2018-05-29

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu MALLICK ,  Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Sanjay KAMATH ,  Zongbin WANG ,  Hanwen ZHANG ,  Shishi JIANG

IPC: H01J37/32

Abstract: Embodiments of the disclosure generally relate to a method of processing a semiconductor substrate at a temperature less than 250 degrees Celsius. In one embodiment, the method includes loading the substrate with the deposited film into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure greater than about 2 bars, and maintaining the pressure vessel at a temperature between a condensation point of the processing gas and about 250 degrees Celsius.

公开(公告)号：US20240110284A1

公开(公告)日：2024-04-04

申请号：US18372792

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： Lulu XIONG ,  Kevin Hsiao ,  Chris LIU ,  Chieh-Wen LO ,  Sean M. SEUTTER ,  Deenesh PADHI ,  Prayudi LIANTO ,  Peng SUO ,  Guan Huei SEE ,  Zongbin WANG ,  Shengwei ZENG ,  Balamurugan RAMASAMY

IPC: C23C16/505 ,  C23C16/04 ,  C23C16/32 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/505 ,  C23C16/045 ,  C23C16/325 ,  C23C16/56 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/3321

Abstract: A method of processing a substrate is disclosed which includes depositing a layer in a processing chamber on a field region, a sidewall region, and a fill region of a feature of the substrate, wherein a hardness of a portion of the layer deposited on the sidewall region is lower than a hardness of a portion of the layer deposited on the field region, and lower than a hardness of a portion of the layer deposited on the fill region.

公开(公告)号：US20150235844A1

公开(公告)日：2015-08-20

申请号：US14609129

申请日：2015-01-29

Applicant: Applied Materials, Inc.

Inventor： Zongbin WANG ,  Shalina Deepa SUDHEERAN ,  Arvind SUNDARRAJAN ,  Bharat BHUSHAN

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/768

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4554 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32577 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/0228 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76898

Abstract: Implementations described herein generally relate to methods for forming dielectric films in high aspect ratio features. In one implementation, a method for forming a silicon oxide layer is provided. A silicon-containing precursor gas is flown into a processing chamber having a substrate having a high aspect ratio feature disposed therein. Then a high frequency plasma is applied to the silicon-containing precursor gas to deposit a silicon-containing layer over the surface of the high aspect ratio feature. The processing chamber is purged to remove by-products from the silicon-containing layer deposition process. An oxygen-containing precursor gas is flown into the processing chamber. A high frequency plasma and a low frequency plasma are applied to the oxygen-containing precursor gas to form the silicon oxide layer.

Abstract translation: 本文描述的实施方案通常涉及用于形成高纵横比特征的介电膜的方法。 在一个实施方案中，提供了形成氧化硅层的方法。 将含硅前体气体流入具有设置在其中的具有高纵横比特征的基板的处理室。 然后将高频等离子体施加到含硅前体气体上以在高纵横比特征的表面上沉积含硅层。 净化处理室以除去含硅层沉积工艺中的副产物。 含氧前体气体流入处理室。 将高频等离子体和低频等离子体施加到含氧前体气体上以形成氧化硅层。