公开(公告)号：US20010025205A1

公开(公告)日：2001-09-27

申请号：US09737681

申请日：2000-12-15

Applicant: Applied Materials, Inc.

Inventor： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

IPC: H01L021/44 ,  G06F019/00 ,  H01L021/28

CPC classification number: H01L21/76864 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

公开(公告)号：US20010016429A1

公开(公告)日：2001-08-23

申请号：US09755009

申请日：2001-01-05

Applicant: Applied Materials, Inc.

Inventor： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

IPC: H01L021/31 ,  B05C011/10 ,  G11B003/68

CPC classification number: H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/66583

Abstract: A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

Abstract translation: 在晶片的上表面上沉积一层氮化钨。 通过提供气体混合物并向气体混合物提供能量以形成等离子体来进行沉积。 气态混合物包括含钨的第一气态组合物和含有氮和氢的第二气态组合物。 第二气态组合物是不与第一气态组合物进行气相反应以形成氮化钨的组合物，除非向气体混合物提供能量。 第一气体组合物可以是六氟化钨（WF 6）。 气体混合物可以通过向其提供来自rf信号的能量而输入能量以形成等离子体。 在等离子体中，氮离解成氮离子，钨与氟分离。 氮离子和钨然后结合形成氮化钨（W2N），其沉积在晶片的上表面上。