公开(公告)号：US11791224B2

公开(公告)日：2023-10-17

申请号：US17317232

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Kiran Lall Shrestha ,  Doyle E. Bennett ,  David Maxwell Gage ,  Benjamin Cherian ,  Jun Qian ,  Harry Q. Lee

IPC: B24B37/013 ,  B24B49/10 ,  G06N3/08 ,  H01L21/321 ,  H01L21/66 ,  H01L21/304 ,  G06F17/15

CPC classification number: H01L22/14 ,  B24B37/013 ,  B24B49/105 ,  G06F17/15 ,  G06N3/08 ,  H01L21/304 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

公开(公告)号：US20210354265A1

公开(公告)日：2021-11-18

申请号：US17317232

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Kiran Lall Shrestha ,  Doyle E. Bennett ,  David Maxwell Gage ,  Benjamin Cherian ,  Jun Qian ,  Harry Q. Lee

IPC: B24B49/10 ,  G06N3/08 ,  H01L21/321 ,  B24B37/013

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

公开(公告)号：US12057354B2

公开(公告)日：2024-08-06

申请号：US18200244

申请日：2023-05-22

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Kiran Lall Shrestha ,  Doyle E. Bennett ,  David Maxwell Gage ,  Benjamin Cherian ,  Jun Qian ,  Harry Q. Lee

IPC: H01L21/66 ,  B24B37/013 ,  B24B49/10 ,  G06F17/15 ,  G06N3/08 ,  H01L21/304 ,  H01L21/321

CPC classification number: H01L22/14 ,  B24B37/013 ,  B24B49/105 ,  G06F17/15 ,  G06N3/08 ,  H01L21/304 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

公开(公告)号：US11865664B2

公开(公告)日：2024-01-09

申请号：US17341285

申请日：2021-06-07

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Harry Q. Lee ,  Benjamin Cherian ,  David Maxwell Gage

IPC: B24B37/005 ,  H01L21/321 ,  B24B37/013 ,  B24B49/10

CPC classification number: B24B37/005 ,  B24B37/013 ,  B24B49/105 ,  H01L21/3212

Abstract: During polishing of a stack of adjacent layers, a plurality of instances of a profile control algorithm are executed on a controller with different instances having different values for a control parameter. A first instance receives a sequence of characterizing values from an in-situ monitoring system during an initial time period to control a polishing parameter, and a second instance receives the sequence of characterizing values during the initial time period and a subsequent time period to control the polishing parameter. Exposure of the underlying layer is detected based on the sequence of characterizing values from the in-situ monitoring system.

公开(公告)号：US20210379724A1

公开(公告)日：2021-12-09

申请号：US17341283

申请日：2021-06-07

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Harry Q. Lee ,  Benjamin Cherian ,  David Maxwell Gage

IPC: B24B37/013 ,  B24B49/10

Abstract: A method of controlling polishing includes polishing a stack of adjacent conductive layers on a substrate, measuring with an in-situ eddy current monitoring system a sequence of characterizing values for the substrate during polishing, calculating a polishing rate from the sequence of characterizing values repeatedly during polishing, calculating one or more adjustments for one or more polishing parameters based on a current polishing rate using a first control algorithm for an initial time period, detecting a change in the polishing rate that indicates exposure of the underlying conductive layer, and calculating one or more adjustments for one or more polishing parameters based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.

公开(公告)号：US20140308814A1

公开(公告)日：2014-10-16

申请号：US13862920

申请日：2013-04-15

Applicant: Applied Materials, Inc

Inventor： David Maxwell Gage ,  You Wang ,  Zhihong Wang ,  Wen-chiang Tu

IPC: H01L21/306 ,  C09G1/04 ,  H01L21/67

CPC classification number: C09G1/04 ,  B24B37/044 ,  H01L21/3212

Abstract: In one aspect, a substrate chemical mechanical polishing (CMP) method for copper-layered substrates is disclosed. The CMP method includes providing a substrate having a surface of copper, and pre-treating the surface containing copper with a first composition containing a carrier liquid, a corrosion inhibitor, and an oxidizer in a pre-treatment phase, and thereafter, polishing the surface with a slurry composition in a main polishing phase. CMP systems and compositions for CMP are provided, as are numerous other aspects.

Abstract translation: 一方面，公开了一种用于铜层基板的基板化学机械抛光（CMP）方法。 CMP方法包括提供具有铜表面的基底，并且在预处理阶段中用含有载体​​液体，腐蚀抑制剂和氧化剂的第一组合物预处理包含铜的表面，然后抛光表面 在主抛光阶段具有浆料组合物。 提供用于CMP的CMP系统和组合物，以及许多其它方面。

公开(公告)号：US20240116152A1

公开(公告)日：2024-04-11

申请号：US18542093

申请日：2023-12-15

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Harry Q. Lee ,  Benjamin Cherian ,  David Maxwell Gage

IPC: B24B37/005 ,  B24B37/013 ,  B24B49/10 ,  H01L21/321

CPC classification number: B24B37/005 ,  B24B37/013 ,  B24B49/105 ,  H01L21/3212

Abstract: A method of controlling polishing includes polishing a stack of adjacent conductive layers on a substrate, measuring with an in-situ eddy current monitoring system a sequence of characterizing values for the substrate during polishing, calculating a polishing rate from the sequence of characterizing values repeatedly during polishing, calculating one or more adjustments for one or more polishing parameters based on a current polishing rate using a first control algorithm for an initial time period, detecting a change in the polishing rate that indicates exposure of the underlying conductive layer, and calculating one or more adjustments for one or more polishing parameters based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.

公开(公告)号：US20240014080A1

公开(公告)日：2024-01-11

申请号：US18471893

申请日：2023-09-21

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Kiran Lall Shrestha ,  Doyle E. Bennett ,  David Maxwell Gage ,  Benjamin Cherian ,  Jun Qian ,  Harry Q. Lee

IPC: H01L21/66 ,  G06N3/08 ,  H01L21/304 ,  G06F17/15 ,  B24B37/013 ,  B24B49/10 ,  H01L21/321

CPC classification number: H01L22/14 ,  G06N3/08 ,  H01L21/304 ,  H01L22/12 ,  G06F17/15 ,  B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L22/26

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

公开(公告)号：US11658078B2

公开(公告)日：2023-05-23

申请号：US17317501

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Kiran Lall Shrestha ,  Doyle E. Bennett ,  David Maxwell Gage ,  Benjamin Cherian ,  Jun Qian ,  Harry Q. Lee

IPC: H01L21/66 ,  H01L21/304 ,  B24B37/013 ,  B24B49/10 ,  H01L21/321 ,  G06N3/08 ,  G06F17/15

CPC classification number: H01L22/14 ,  B24B37/013 ,  B24B49/105 ,  G06F17/15 ,  G06N3/08 ,  H01L21/304 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

公开(公告)号：US11850699B2

公开(公告)日：2023-12-26

申请号：US17341283

申请日：2021-06-07

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Harry Q. Lee ,  Benjamin Cherian ,  David Maxwell Gage

IPC: B24B37/005 ,  H01L21/321 ,  B24B37/013 ,  B24B49/10

CPC classification number: B24B37/005 ,  B24B37/013 ,  B24B49/105 ,  H01L21/3212

Abstract: A method of controlling polishing includes polishing a stack of adjacent conductive layers on a substrate, measuring with an in-situ eddy current monitoring system a sequence of characterizing values for the substrate during polishing, calculating a polishing rate from the sequence of characterizing values repeatedly during polishing, calculating one or more adjustments for one or more polishing parameters based on a current polishing rate using a first control algorithm for an initial time period, detecting a change in the polishing rate that indicates exposure of the underlying conductive layer, and calculating one or more adjustments for one or more polishing parameters based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.