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    INTERCONNECT FABRICATION AT AN INTEGRATED SEMICONDUCTOR PROCESSING STATION
    2.
    发明申请
    INTERCONNECT FABRICATION AT AN INTEGRATED SEMICONDUCTOR PROCESSING STATION 审中-公开
    在一体化半导体加工站的互连制造

    公开(公告)号：US20140315381A1

    公开(公告)日：2014-10-23

    申请号：US13866449

    申请日：2013-04-19

    Applicant: Applied Materials, Inc.

    Inventor： You Wang ,  Wen-chiang Tu ,  Zhihong Wang

    IPC: H01L21/768 ,  H01L21/67

    CPC classification number: H01L21/768 ,  H01L21/3212 ,  H01L21/6776 ,  H01L21/76819 ,  H01L21/7684 ,  H01L21/76865 ,  H01L21/76873

    Abstract: A stand-alone processing station of a semiconductor manufacturing system may be configured to fabricate interconnects on a semiconductor wafer. The stand-alone processing station may include a chemical mechanical polishing (CMP) module and an electro-chemical deposition (ECD) module. The CMP module may be configured to receive a semiconductor wafer from another processing station and selectively remove a first top layer from the received semiconductor wafer. The ECD module may be configured to receive a semiconductor wafer from the CMP module and fill interconnect features with metal. The CMP module may also be configured to receive a semiconductor wafer from the ECD module and selectively remove excess metal and a second top layer from the semiconductor wafer. Methods of forming an interconnect on a semiconductor wafer are also provided, as are other aspects.

    Abstract translation: 半导体制造系统的独立处理站可以被配置为在半导体晶片上制造互连。 独立处理站可以包括化学机械抛光（CMP）模块和电化学沉积（ECD）模块。 CMP模块可以被配置为从另一个处理站接收半导体晶片，并从接收到的半导体晶片中选择性地去除第一顶层。 ECD模块可以被配置为从CMP模块接收半导体晶片并且用金属填充互连特征。 CMP模块还可以被配置为从ECD模块接收半导体晶片并且选择性地从半导体晶片去除多余的金属和第二顶层。 还提供了在半导体晶片上形成互连的方法，以及其他方面。

    Systems and methods for copper (I) suppression in electrochemical deposition
    3.
    发明授权
    Systems and methods for copper (I) suppression in electrochemical deposition 有权

    公开(公告)号：US11211252B2

    公开(公告)日：2021-12-28

    申请号：US16260611

    申请日：2019-01-29

    Applicant: Applied Materials, Inc.

    Inventor： Eric J. Bergman ,  John L. Klocke ,  You Wang

    IPC: C25D3/38 ,  C25D7/12 ,  C25D21/14 ,  H01L21/288 ,  C25D5/10 ,  H01L21/768

    Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

    CHEMICAL MECHANICAL POLISHING METHODS AND SYSTEMS INCLUDING PRE-TREATMENT PHASE AND PRE-TREATMENT COMPOSITIONS
    5.
    发明申请
    CHEMICAL MECHANICAL POLISHING METHODS AND SYSTEMS INCLUDING PRE-TREATMENT PHASE AND PRE-TREATMENT COMPOSITIONS 审中-公开
    化学机械抛光方法和系统，包括预处理相和预处理组合物

    公开(公告)号：US20140308814A1

    公开(公告)日：2014-10-16

    申请号：US13862920

    申请日：2013-04-15

    Applicant: Applied Materials, Inc

    Inventor： David Maxwell Gage ,  You Wang ,  Zhihong Wang ,  Wen-chiang Tu

    IPC: H01L21/306 ,  C09G1/04 ,  H01L21/67

    CPC classification number: C09G1/04 ,  B24B37/044 ,  H01L21/3212

    Abstract: In one aspect, a substrate chemical mechanical polishing (CMP) method for copper-layered substrates is disclosed. The CMP method includes providing a substrate having a surface of copper, and pre-treating the surface containing copper with a first composition containing a carrier liquid, a corrosion inhibitor, and an oxidizer in a pre-treatment phase, and thereafter, polishing the surface with a slurry composition in a main polishing phase. CMP systems and compositions for CMP are provided, as are numerous other aspects.

    Abstract translation: 一方面，公开了一种用于铜层基板的基板化学机械抛光（CMP）方法。 CMP方法包括提供具有铜表面的基底，并且在预处理阶段中用含有载体​​液体，腐蚀抑制剂和氧化剂的第一组合物预处理包含铜的表面，然后抛光表面 在主抛光阶段具有浆料组合物。 提供用于CMP的CMP系统和组合物，以及许多其它方面。

    SYSTEMS AND METHODS FOR COPPER (I) SUPPRESSION IN ELECTROCHEMICAL DEPOSITION
    6.
    发明申请
    SYSTEMS AND METHODS FOR COPPER (I) SUPPRESSION IN ELECTROCHEMICAL DEPOSITION 审中-公开

    公开(公告)号：US20190237335A1

    公开(公告)日：2019-08-01

    申请号：US16260611

    申请日：2019-01-29

    Applicant: Applied Materials, Inc.

    Inventor： Eric J. Bergman ,  John L. Klocke ,  You Wang

    IPC: H01L21/288 ,  C25D5/10 ,  C25D7/12 ,  H01L21/768 ,  C25D3/38

    CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/76843

    Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

    Polishing pads for high temperature processing
    8.
    发明授权
    Polishing pads for high temperature processing 有权

    公开(公告)号：US11911870B2

    公开(公告)日：2024-02-27

    申请号：US17472006

    申请日：2021-09-10

    Applicant: Applied Materials, Inc.

    Inventor： Sivapackia Ganapathiappan ,  Rajeev Bajaj ,  Yingdong Luo ,  Aniruddh Jagdish Khanna ,  You Wang ,  Daniel Redfield

    IPC: B24B37/24 ,  B24B37/26 ,  B24B37/22

    CPC classification number: B24B37/24 ,  B24B37/26 ,  B24B37/22

    Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements. Each polishing element comprises an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface to define a plurality of channels disposed between the polishing elements. Each of the polishing elements has a plurality of pore-features formed therein. Each of the polishing elements is formed of a pre-polymer composition and a sacrificial material composition. In some cases, a sample of the cured pre-polymer composition has a glass transition temperature (Tg) of about 80° C. or greater. A storage modulus (E′) of the cured pre-polymer composition at a temperature of 80° C. (E′80) can be about 200 MPa or greater.

    POLISHING PADS FOR HIGH TEMPERATURE PROCESSING
    9.
    发明申请
    POLISHING PADS FOR HIGH TEMPERATURE PROCESSING 有权

    公开(公告)号：US20230080430A1

    公开(公告)日：2023-03-16

    申请号：US17472006

    申请日：2021-09-10

    Applicant: Applied Materials, Inc.

    Inventor： Sivapackia GANAPATHIAPPAN ,  Rajeev Bajaj ,  Yingdong Luo ,  Aniruddh Jagdish Khanna ,  You Wang ,  Daniel Redfield

    IPC: B24B37/24 ,  B24B37/26

    Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements. Each polishing element comprises an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface to define a plurality of channels disposed between the polishing elements. Each of the polishing elements has a plurality of pore-features formed therein. Each of the polishing elements is formed of a pre-polymer composition and a sacrificial material composition. In some cases, a sample of the cured pre-polymer composition has a glass transition temperature (Tg) of about 80° C. or greater. A storage modulus (E′) of the cured pre-polymer composition at a temperature of 80° C. (E′80) can be about 200 MPa or greater.

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