公开(公告)号：US20170027049A1

公开(公告)日：2017-01-26

申请号：US15147974

申请日：2016-05-06

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Jibing ZENG ,  David Muquing HOU ,  Michael S. COX ,  Zheng YUAN ,  James L'HEUREUX

IPC: H05H1/24 ,  H01L21/67 ,  H01J37/32

CPC classification number: H05H1/2406 ,  H01J37/3211 ,  H01J37/32348 ,  H01J2237/022 ,  H01J2237/327 ,  H01J2237/335 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4667 ,  H05H2245/1225 ,  H05H2245/123

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Abstract translation: 本文公开的实施例包括用于减轻半导体工艺中产生的化合物的等离子体源，减排系统和真空处理系统。 在一个实施例中，等离子体源包括介电管和围绕管的线圈天线。 线圈天线​​包括多个匝，并且至少一匝短路。 选择性地短路一圈或多圈线圈天线有助于降低线圈天线的电感，从而允许更高的功率供应到覆盖更多处理量的线圈天线。 提供给线圈天线的较高功率和较大的处理量导致改进的DRE。

公开(公告)号：US20190246481A1

公开(公告)日：2019-08-08

申请号：US16206276

申请日：2018-11-30

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Jibing ZENG ,  David Muquing HOU ,  Michael S. COX ,  Zheng YUAN ,  James L'HEUREUX

IPC: H05H1/24 ,  C23C16/507 ,  H01J37/32 ,  H05H1/46 ,  C23C16/44

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

公开(公告)号：US20180337027A1

公开(公告)日：2018-11-22

申请号：US15961482

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： James L'HEUREUX ,  Ryan T. DOWNEY ,  David Muquing HOU ,  Yan ROZENZON

IPC: H01J37/32 ,  H01L21/67 ,  B01D53/32

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes a plate and a cooling plate disposed downstream of the plate. During operation, materials collected on the plate react with cleaning radicals to form a gas. The temperature of the plate is higher than the temperature of the cooling plate in order to improve the reaction rate of the reaction of the cleaning radicals and the materials on the plate.

公开(公告)号：US20180166306A1

公开(公告)日：2018-06-14

申请号：US15826063

申请日：2017-11-29

Applicant: Applied Materials, Inc.

Inventor： David Muquing HOU ,  James L'HEUREUX ,  Zheng YUAN

IPC: H01L21/67 ,  C23C16/50 ,  C23C16/24 ,  C23C14/48

CPC classification number: H01L21/67253 ,  C23C14/48 ,  C23C14/564 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32834 ,  H01J37/32844 ,  H01L21/67173 ,  H01L21/67288 ,  Y02C20/30

Abstract: Embodiments of the present disclosure generally relate to abatement for semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to techniques for foreline solids formation quantification. In one embodiment, a system includes one or more quartz crystal microbalance (QCM) sensors located between a processing chamber and a facility exhaust. The one or more QCM sensors provide real-time measurement of the amount of solids generated in the system without having to shut down a pump located between the processing chamber and the facility exhaust. In addition, information provided by the QCM sensors can be used to control the flow of reagents used to abate compounds in the effluent exiting the processing chamber in order to reduce solid formation.