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公开(公告)号：US20240068093A1
公开(公告)日：2024-02-29
申请号：US17896025
申请日：2022-08-25
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , James L'HEUREUX , Rony David MATHEW
CPC classification number: C23C16/4412 , H01J37/3244 , H01J37/32834
Abstract: A system and method for controlling pressure in a foreline of a processing system are disclosed herein that reduce variation in foreline pressure. In one example, a processing system is provided that includes a first process chamber, a first pump, a foreline, and a first foreline pressure control system. The first pump has an inlet and an outlet. The inlet of the first pump coupled to an exhaust port of the first process chamber. The foreline is coupled to the outlet of the first pump. The first foreline pressure control system is fluidly coupled to the foreline downstream of the first pump. The first foreline pressure control system is operable to control a pressure in the foreline independent from operation of the first pump.
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公开(公告)号：US20250123186A1
公开(公告)日：2025-04-17
申请号：US18990726
申请日：2024-12-20
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , Hemant P. MUNGEKAR , James L'HEUREUX , Andreas NEUBER , Michael W. JOHNSON , Joseph VAN GOMPEL , Gino Gerardo CRISPIERI , Tony H. TONG , Maxime CAYER , John L. KOENIG , Mike M. HUANG
IPC: G01M99/00
Abstract: The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.
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公开(公告)号：US20250114740A1
公开(公告)日：2025-04-10
申请号：US18377138
申请日：2023-10-05
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , Shaun W. CRAWFORD
Abstract: Disclosed herein are an auxiliary abatement device for abating effluent gases, an abatement system including the auxiliary abatement device, and an abatement method for the abatement system. The auxiliary abatement device includes a first chamber comprising a first inlet configured to receive the effluent gases; and a second chamber configured to treat the effluent gases and comprising a second inlet configured to receive a reagent, a first outlet configured to output treated effluent gases, and a second outlet configured to output a byproduct produced by treating the effluent gases. The first chamber and the second chamber are coupled by a conduit. The abatement system includes a plasma unit and an auxiliary abatement device to partially treat the effluent gases. The abatement system utilizes a primary abatement unit disposed downstream of the plasma unit and the auxiliary abatement device to treat the effluent gases in bulk.
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Patent Agency Ranking
公开(公告)号：US20180221816A1
公开(公告)日：2018-08-09
申请号：US15887834
申请日：2018-02-02
Applicant: Applied Materials, Inc.
Inventor： Joseph A. VAN GOMPEL , Dustin W. HO , Zheng YUAN , James L'HEUREUX , Ryan T. DOWNEY
CPC classification number: B01D53/56 , B01D53/323 , B01D53/346 , B01D53/76 , B01D2251/202 , B01D2257/402 , B01D2258/0216 , C10G70/00 , G05D16/2066 , H01L21/67017 , Y02C20/10
Abstract: Embodiments of the present disclosure generally relate techniques for abating N2O gas present in the effluent of semiconductor manufacturing processes. In one embodiment, a method includes injecting hydrogen gas or ammonia gas into a plasma source, and an effluent containing N2O gas and the hydrogen or ammonia gas are energized and reacted to form an abated material. By using the hydrogen gas or the ammonia gas, the destruction and removal efficiency (DRE) of the N2O gas is at least 50 percent while the concentration of nitric oxide (NO) and/or nitrogen dioxide (NO2) in the abated material is substantially reduced, such as at most 5000 parts per million (ppm) by volume.
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公开(公告)号：US20250121321A1
公开(公告)日：2025-04-17
申请号：US18912465
申请日：2024-10-10
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY
Abstract: Disclosed herein are a system and a method for abating effluent gases output by a processing chamber. The abatement system includes a plasma source, a reagent delivery subsystem having a foreline, and a controller coupled with the processing chamber, the plasma source and the reagent delivery subsystem. The reagent delivery subsystem provides a first reagent gas into the foreline during a substrate processing period and includes a flow control device operable to regulate the flow rate of the first reagent gas. The controller controls the reagent delivery subsystem and the plasma source based on processing information of the processing chamber. During a chamber evacuation period of the processing chamber, the controller causes the reagent delivery subsystem to stop providing or reduce a flow rate of the first reagent gas while causing the plasma source to maintain the plasma.
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6.发明申请公开(公告)号：US20180337027A1
公开(公告)日：2018-11-22
申请号：US15961482
申请日：2018-04-24
Applicant: Applied Materials, Inc.
Inventor： James L'HEUREUX , Ryan T. DOWNEY , David Muquing HOU , Yan ROZENZON
Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes a plate and a cooling plate disposed downstream of the plate. During operation, materials collected on the plate react with cleaning radicals to form a gas. The temperature of the plate is higher than the temperature of the cooling plate in order to improve the reaction rate of the reaction of the cleaning radicals and the materials on the plate.
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公开(公告)号：US20240347324A1
公开(公告)日：2024-10-17
申请号：US18429086
申请日：2024-01-31
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , Joseph T. VAN GOMPEL , James L'HEUREUX
CPC classification number: H01J37/32844 , C23C16/4412 , H01J2237/3321
Abstract: A method and system for treating effluent from a processing chamber are disclosed herein. In one example, the effluent is treated by flowing a hydrocarbon processing gas into a processing chamber having a substrate disposed therein, performing a process on the substrate using the hydrocarbon processing gas that creates organic byproducts, exhausting the organic byproducts from the processing chamber into a foreline having an abatement reaction zone, and treating the organic byproducts in the abatement reaction zone. The treating of the organic byproducts comprises mixing a disassociated oxygen-containing gas and the organic byproducts in the abatement reaction zone, and forming at least carbon monoxide and carbon dioxide from the mixture of the disassociated oxygen-containing gas and the organic byproducts.
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公开(公告)号：US20220341821A1
公开(公告)日：2022-10-27
申请号：US17240677
申请日：2021-04-26
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , Hemant P. MUNGEKAR , James L'HEUREUX , Andreas NEUBER , Michael W. JOHNSON , Joseph A. VAN GOMPEL , Gino Gerardo CRISPIERI , Tony H. TONG , Maxime CAYER , John L. KOENIG , Mike M. HUANG
IPC: G01M99/00
Abstract: The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.
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