公开(公告)号：US20240012393A1

公开(公告)日：2024-01-11

申请号：US17981305

申请日：2022-11-04

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Aleksey Yanovich ,  Orlando Trejo ,  Elizabeth Neville ,  Dinesh Saigal ,  Umesh Madhav Kelkar

IPC: G05B19/4065

CPC classification number: G05B19/4065 ,  G05B2219/50185

Abstract: In embodiments, a method includes receiving, by a processing device, first sensor data generated by a plurality of sensors of a process chamber of a manufacturing system during execution of a fabrication process. The method includes receiving, by the processing device, second sensor data generated by one or more external sensors that are not components of the process chamber during execution of the fabrication process. The method includes determining, by the processing device, environmental resource usage data indicative of an environmental resource consumption of the fabrication process run on the process chamber based on the first sensor data and the second sensor data. The method includes providing, by the processing device, the environmental resource usage data for display on a graphical user interface (GUI).

公开(公告)号：US11011676B2

公开(公告)日：2021-05-18

申请号：US15183594

申请日：2016-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L33/06 ,  H01L33/12 ,  H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.