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公开(公告)号：US11081623B2
公开(公告)日：2021-08-03
申请号：US16721301
申请日：2019-12-19
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US10236412B2
公开(公告)日：2019-03-19
申请号：US15980583
申请日：2018-05-15
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US10193014B2
公开(公告)日：2019-01-29
申请号：US14884251
申请日：2015-10-15
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US11011676B2
公开(公告)日：2021-05-18
申请号：US15183594
申请日：2016-06-15
Applicant: APPLIED MATERIALS, INC.
Inventor： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
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公开(公告)号：US10546973B2
公开(公告)日：2020-01-28
申请号：US16265895
申请日：2019-02-01
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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Patent Agency Ranking
公开(公告)号：US20190172973A1
公开(公告)日：2019-06-06
申请号：US16265895
申请日：2019-02-01
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
CPC classification number: H01L33/12 , H01J37/32467 , H01J37/32724 , H01J37/3405 , H01J37/347 , H01L29/2003 , H01L31/1856 , H01L33/007 , H01L33/0075 , Y02E10/544
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US20210328104A1
公开(公告)日：2021-10-21
申请号：US17362794
申请日：2021-06-29
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US10109481B2
公开(公告)日：2018-10-23
申请号：US14410790
申请日：2013-07-01
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Vivek Agrawal , Anantha Subramani , Daniel Lee Diehl , Xianmin Tang
IPC: H01L21/02 , H01L21/3065 , H01L21/322 , H01J37/34 , C23C14/00 , C23C14/06
Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.
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公开(公告)号：US11575071B2
公开(公告)日：2023-02-07
申请号：US17362794
申请日：2021-06-29
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US09929310B2
公开(公告)日：2018-03-27
申请号：US13947857
申请日：2013-07-22
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandia , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
CPC classification number: H01L33/12 , H01J37/32467 , H01J37/32724 , H01J37/3405 , H01J37/347 , H01L29/2003 , H01L31/1856 , H01L33/007 , H01L33/0075 , Y02E10/544
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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