公开(公告)号：US20250038051A1

公开(公告)日：2025-01-30

申请号：US18908747

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Dixiong WANG ,  Yi LUO

IPC: H01L21/768 ,  C23C16/14 ,  H01L21/285 ,  H01L23/532

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

公开(公告)号：US20230317458A1

公开(公告)日：2023-10-05

申请号：US17887292

申请日：2022-08-12

Applicant: Applied Materials, Inc.

Inventor： Kai WU ,  Xi CEN ,  Dixiong WANG ,  Yang LI ,  Peiqi WANG

IPC: H01L21/285 ,  C23C16/56 ,  C23C16/455 ,  C23C16/50 ,  C23C16/08

CPC classification number: H01L21/28568 ,  C23C16/56 ,  C23C16/45553 ,  C23C16/50 ,  C23C16/08

Abstract: A method of forming an interconnect structure over a substrate includes forming a nucleation layer over a surface of the substrate. The surface of the substrate comprises a plurality of openings, and the process of forming the nucleation layer includes (a) exposing the substrate to a tungsten-containing precursor gas to form a tungsten-containing layer over a surface of each of the plurality of openings, (b) exposing the formed tungsten-containing layer to an etchant gas, wherein exposing the tungsten-containing layer to the etchant gas etches at least a portion of the tungsten-containing layer disposed at a top region of each of the plurality of openings, and repeating (a) and (b) one or more times. The method further includes forming a bulk layer over the formed nucleation layer.

公开(公告)号：US20240162089A1

公开(公告)日：2024-05-16

申请号：US18054798

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Dixiong WANG ,  Xi CEN ,  Kai WU ,  Peiqi WANG ,  Yang LI

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76876 ,  H01L21/76883

Abstract: A method of forming a structure on a substrate that includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer to a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow points within the at least one opening. The method includes exposing the at least one opening of the substrate to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening to a molybdenum-containing gas to remove a tungsten nitride layer from the tungsten fill layer.

公开(公告)号：US20240047268A1

公开(公告)日：2024-02-08

申请号：US18353447

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Xi CEN ,  Dixiong WANG ,  Mingrui ZHAO ,  Yang LI ,  Kai WU

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.

公开(公告)号：US20230290679A1

公开(公告)日：2023-09-14

申请号：US17654077

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Dixiong WANG ,  Yi LUO

IPC: H01L21/768 ,  H01L23/532 ,  C23C16/14

CPC classification number: H01L21/76876 ,  H01L23/53261 ,  H01L23/53266 ,  H01L21/76846 ,  C23C16/14 ,  H01L21/28568

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.