公开(公告)号：US20240222128A1

公开(公告)日：2024-07-04

申请号：US18558388

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Mingrui ZHAO ,  Peiqi WANG ,  Kai WU ,  Harpreet SINGH ,  Michael C. KUTNEY

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC classification number: H01L21/28506 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/52 ,  H01L21/76879

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process. The processing system is configured to periodically condition the first radial generator by forming a plasma of a relatively low amount of a halogen-based gas.

公开(公告)号：US20240209500A1

公开(公告)日：2024-06-27

申请号：US18557675

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Wei Min CHAN ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO ,  Michael C. KUTNEY ,  Kazuya DAITO ,  Harpreet SINGH

IPC: C23C16/44 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/54 ,  H01L21/285 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/4405 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53266

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process.

公开(公告)号：US20220359279A1

公开(公告)日：2022-11-10

申请号：US17316649

申请日：2021-05-10

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Mingrui ZHAO ,  Peiqi WANG ,  Wei Min CHAN ,  Kai WU ,  Yi LUO ,  Liqi WU

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/06

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

公开(公告)号：US20240274407A1

公开(公告)日：2024-08-15

申请号：US18168168

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kelvin CHAN ,  Kai WU ,  Mingrui ZHAO ,  David PETERSON ,  Ping-Hwa HSIEH

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32458 ,  H01J37/32743 ,  H01L21/02315

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process where the differential inhibition treatment process includes exposing a substrate to the effluent of a treatment plasma from a halogen free nitrogen-containing gas and a halogen-containing gas.

公开(公告)号：US20240047268A1

公开(公告)日：2024-02-08

申请号：US18353447

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Xi CEN ,  Dixiong WANG ,  Mingrui ZHAO ,  Yang LI ,  Kai WU

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.

公开(公告)号：US20230374660A1

公开(公告)日：2023-11-23

申请号：US17663695

申请日：2022-05-17

Applicant: Applied Materials, Inc.

Inventor： Harpreet SINGH ,  Jallepally RAVI ,  Zubin HUANG ,  Manjunatha KOPPA ,  Sandesh YADAMANE ,  Srinivas TOKUR MOHANA ,  Shreyas PATIL SHANTHAVEERASWAMY ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO

IPC: C23C16/455 ,  C23C16/06 ,  H01L21/285

CPC classification number: C23C16/45561 ,  C23C16/06 ,  H01L21/28568 ,  C23C16/45591

Abstract: A substrate processing system is provided having a processing chamber. The processing chamber includes a lid plate, one or more chamber sidewalls, and a chamber base that collectively define a processing volume. An annular plate is coupled to the lid plate, and an edge manifold is fluidly coupled to the processing chamber through the annular plate and the lid plate. The substrate processing system includes a center manifold that is coupled to the lid plate.