公开(公告)号：US20240209500A1

公开(公告)日：2024-06-27

申请号：US18557675

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Wei Min CHAN ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO ,  Michael C. KUTNEY ,  Kazuya DAITO ,  Harpreet SINGH

IPC: C23C16/44 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/54 ,  H01L21/285 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/4405 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53266

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process.

公开(公告)号：US20220359279A1

公开(公告)日：2022-11-10

申请号：US17316649

申请日：2021-05-10

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Mingrui ZHAO ,  Peiqi WANG ,  Wei Min CHAN ,  Kai WU ,  Yi LUO ,  Liqi WU

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/06

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

公开(公告)号：US20240368754A1

公开(公告)日：2024-11-07

申请号：US18773309

申请日：2024-07-15

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Cheng CHENG ,  Kai WU ,  Insu HA ,  Sang Jin LEE

IPC: C23C16/38 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56

Abstract: A structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The nucleation layer is disposed along sidewalls of the opening. The nucleation layer includes boron and tungsten. The fill layer is disposed over the nucleation layer within the opening. The tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less. The tungsten-containing layer has a thickness of about 200 Å to about 600 Å. The tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

公开(公告)号：US20240352588A1

公开(公告)日：2024-10-24

申请号：US18379028

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kai WU ,  Dongming IU ,  Mehran BEHDJAT

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4587 ,  C23C16/45574 ,  C23C16/4586

Abstract: A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to as wafers herein) at different temperatures. The processing chamber includes a chamber body, a substrate support disposed within the chamber body and having a top surface, a plurality of substrate lift pins disposed through the substrate support, and a shadow ring lift assembly. The shadow ring lift assembly is operable to raise and lower a shadow ring positioned above or level with the top surface of the substrate support.

公开(公告)号：US20240162089A1

公开(公告)日：2024-05-16

申请号：US18054798

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Dixiong WANG ,  Xi CEN ,  Kai WU ,  Peiqi WANG ,  Yang LI

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76876 ,  H01L21/76883

Abstract: A method of forming a structure on a substrate that includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer to a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow points within the at least one opening. The method includes exposing the at least one opening of the substrate to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening to a molybdenum-containing gas to remove a tungsten nitride layer from the tungsten fill layer.

公开(公告)号：US20240222128A1

公开(公告)日：2024-07-04

申请号：US18558388

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Mingrui ZHAO ,  Peiqi WANG ,  Kai WU ,  Harpreet SINGH ,  Michael C. KUTNEY

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC classification number: H01L21/28506 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/52 ,  H01L21/76879

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process. The processing system is configured to periodically condition the first radial generator by forming a plasma of a relatively low amount of a halogen-based gas.

公开(公告)号：US20230130756A1

公开(公告)日：2023-04-27

申请号：US17508581

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Srinivas Tokur MOHANA ,  Sandesh YADAMANE ,  Kai WU ,  Jallepally RAVI ,  Xiaozhou YU ,  Peiqi WANG

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

Abstract: Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.

公开(公告)号：US20240229230A1

公开(公告)日：2024-07-11

申请号：US18614912

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Mohammed Jaheer SHERFUDEEN ,  David Matthew SANTI ,  Jallepally RAVI ,  Peiqi WANG ,  Kai WU

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

公开(公告)号：US20230357929A1

公开(公告)日：2023-11-09

申请号：US17862138

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Jallepally RAVI ,  Cheng CHENG ,  Peiqi WANG ,  Kai WU

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/4585 ,  H01L21/68721 ,  C23C16/46 ,  C23C16/45565

Abstract: A shadow ring for a processing chamber, such as a semiconductor processing chamber, is an annular member including a body with a radially inwardly projecting lip. The shadow ring includes a feature that mitigates heat transfer between the lip and the rest of the body. In one example, the feature includes a plurality of apertures, each aperture extending from an upper opening at an upper surface of the shadow ring to a corresponding lower opening at a lower surface of the shadow ring. A neck between adjacent apertures creates a bottleneck that hinders conductive heat transfer.

公开(公告)号：US20230340662A1

公开(公告)日：2023-10-26

申请号：US17729943

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Mohammed Jaheer SHERFUDEEN ,  David Matthew SANTI ,  Jallepally Ravi ,  Peiqi WANG ,  Kai WU

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.