公开(公告)号：US20180144960A1

公开(公告)日：2018-05-24

申请号：US15623503

申请日：2017-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： JUN-LIANG SU ,  KARTHIK ELUMALAI ,  ENG SHENG PEH ,  Sriskantharajah THIRUNAVUKARASU ,  DIMANTHA RAJAPAKSA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673 ,  G01B11/24

Abstract: Systems, apparatuses and methods for determining a surface profile of a substrate are provided. In one embodiment, a method includes projecting a signal having a vertical component/profile across the surface of the substrate from a plurality of locations along a first side of the substrate, capturing the projected signals at each of a plurality of respective locations across the surface of the substrate and determining a surface profile for the substrate using the captured signals. The process can be automated using a controller having predetermined projection and capture positions along respective sides of the substrate, where a surface profile of the substrate can be automatically determined by the controller using the captured signals.

公开(公告)号：US20160322234A1

公开(公告)日：2016-11-03

申请号：US15142220

申请日：2016-04-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Jen Sern LEW ,  Tuck Foong KOH ,  Sriskantharajah THIRUNAVUKARASU ,  Karthik ELUMALAI ,  ENG SHENG PEH ,  JUN-LIANG SU

IPC: H01L21/324 ,  F27B9/02 ,  F27B9/10 ,  H01L21/67

CPC classification number: H01L21/3247 ,  F27B9/02 ,  F27B9/10 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67288

Abstract: Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a first process chamber having a first substrate support and a first showerhead, wherein the first substrate support does not include a chucking mechanism; a first heater disposed in the first substrate support to heat a substrate placed on a first support surface of the first substrate support; a second heater configured to heat a process gas flowing through the first showerhead into a first processing volume of the first process chamber; and a second process chamber having a second substrate support, wherein the second substrate support is not heated, and wherein the first process chamber and the cooling chamber are both non-vacuum chambers.

Abstract translation: 本文提供了用于校正衬底畸形的方法和装置的实施例。 在一些实施例中，衬底平坦化系统包括：具有第一衬底支撑件和第一喷头的第一处理室，其中所述第一衬底支撑件不包括夹紧机构; 第一加热器，设置在所述第一基板支撑件中以加热放置在所述第一基板支撑件的第一支撑表面上的基板; 第二加热器，被配置为将流过所述第一喷淋头的处理气体加热到所述第一处理室的第一处理容积中; 以及具有第二基板支撑件的第二处理室，其中所述第二基板支撑件不被加热，并且其中所述第一处理室和所述冷却室都是非真空室。

公开(公告)号：US20240363348A1

公开(公告)日：2024-10-31

申请号：US18765888

申请日：2024-07-08

Applicant: Applied Materials, Inc.

Inventor： Karthik Narayanan BALAKRISHNAN ,  Jungrae PARK ,  Arunkumar TATTI ,  Sriskantharajah THIRUNAVUKARASU ,  Eng Sheng PEH

IPC: H01L21/033 ,  B23K26/14 ,  B23K26/142 ,  B23K101/40 ,  H01L21/78

CPC classification number: H01L21/0337 ,  B23K26/142 ,  B23K26/1436 ,  B23K26/1437 ,  H01L21/78 ,  B23K2101/40

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

公开(公告)号：US20220085268A1

公开(公告)日：2022-03-17

申请号：US17023999

申请日：2020-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah THIRUNAVUKARASU ,  Puay Han TAN ,  Karrthik PARATHITHASAN ,  Jun-Liang SU ,  Fang Jie LIM ,  Chin Wei TAN ,  Wei Jie Dickson TEO

IPC: H01L35/32 ,  H05K1/02 ,  H01L23/00

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.

公开(公告)号：US20210035795A1

公开(公告)日：2021-02-04

申请号：US16936918

申请日：2020-07-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Qi Jie PENG ,  Prayudi LIANTO ,  Chin Wei TAN ,  Sriskantharajah THIRUNAVUKARASU ,  Arvind SUNDARRAJAN ,  Jun-Liang SU ,  Fang Jie LIM ,  Manorajh ARUNAKIRI ,  Wei Jie Dickson TEO ,  Karrthik PARATHITHASAN ,  Puay Han TAN

IPC: H01L21/02 ,  H01L21/683 ,  H01L21/324

Abstract: Methods and apparatus for reducing warpage of a substrate. In some embodiments, a method of reducing substrate warpage comprises heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; maintaining the at least the glass transition temperature of the substrate until the substrate is constrained; constraining the substrate with a total clamping force of approximately 5000N to approximately 7000N exerted towards the substrate from a top direction and a bottom direction; applying at least one electrostatic field to the substrate with a first electrostatic chuck positioned above the substrate and a second electrostatic chuck positioned below the substrate; and rapidly cooling the substrate using a first liquid convection heat sink positioned above the substrate and a second liquid convection heat sink positioned below the substrate.

公开(公告)号：US20180281151A1

公开(公告)日：2018-10-04

申请号：US15474736

申请日：2017-03-30

Applicant: Applied Materials, Inc.

Inventor： Seshadri RAMASWAMI ,  Rajeev BAJAJ ,  Niranjan KUMAR ,  Sriskantharajah THIRUNAVUKARASU ,  Arvind SUNDARRAJAN

IPC: B24B37/32 ,  B24B37/20 ,  B24B41/06

Abstract: Embodiments of the disclosure relate to a system, apparatus and method for polishing thin substrates with high planarity. The apparatus comprises a chemical mechanical polishing head and a plate. The polishing head comprises a bottom surface, a retaining ring, a workpiece-receiving pocket defined between the bottom surface and the retaining ring, and at least one vacuum port adapted to provide a vacuum to the workpiece-receiving pocket through the bottom surface of the polishing head. The plate is disposed in the workpiece-receiving pocket such that the upper side of the plate faces the bottom surface of the polishing head and the lower side of the plate faces away from the bottom surface of the polishing head. The plate has a geometry or a material property configured to allow fluid to pass between the upper side and the lower side of the plate upon application of vacuum in the workpiece-receiving pocket.

公开(公告)号：US20180218928A1

公开(公告)日：2018-08-02

申请号：US15811575

申请日：2017-11-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Eng Sheng PEH ,  Sriskantharajah THIRUNAVUKARASU ,  Jun-Liang SU ,  Shoju VAYYAPRON ,  Karthik ELUMALAI ,  Dimantha RAJAPAKSA ,  Arunkumar M Tatti

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/683 ,  H05B3/00

CPC classification number: H01L21/67115 ,  H01L21/67017 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68757 ,  H05B3/0047

Abstract: Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate support includes a base having an interior volume formed by walls extending upward from the base; a plurality of infrared lamps disposed within the interior volume; a support plate disposed above the plurality of infrared lamps, wherein the support plate includes a support surface to support a substrate; and a cover plate disposed atop the support plate and having a central opening corresponding to the support surface and an exhaust portion at a periphery of a top surface of the cover plate, wherein the exhaust portion includes a plurality of perforations fluidly coupling a space above the cover plate with an exhaust conduit formed in the cover plate. Embodiments of a showerhead assembly and processing equipment incorporating the inventive substrate support and showerhead assembly are additionally provided herein.

公开(公告)号：US20220319847A1

公开(公告)日：2022-10-06

申请号：US17219082

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Karthik Narayanan BALAKRISHNAN ,  Jungrae PARK ,  Arunkumar TATTI ,  Sriskantharajah THIRUNAVUKARASU ,  Eng Sheng PEH

IPC: H01L21/033 ,  H01L21/78 ,  B23K26/142 ,  B23K26/14

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

公开(公告)号：US20210130948A1

公开(公告)日：2021-05-06

申请号：US16673196

申请日：2019-11-04

Applicant: Applied Materials, Inc.

Inventor： Lit Ping LAM ,  Sriskantharajah THIRUNAVUKARASU ,  Ian ONG

IPC: C23C16/44 ,  B33Y80/00 ,  B22F3/105 ,  B81C1/00

Abstract: Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

公开(公告)号：US20160307742A1

公开(公告)日：2016-10-20

申请号：US14690121

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Rohit MISHRA ,  Graeme Jamieson SCOTT ,  Khalid Mohiuddin SIRAJUDDIN ,  Sheshraj L. TULSHIBAGWALE ,  Sriskantharajah THIRUNAVUKARASU

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32715

Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

Abstract translation: 本公开的实施例包括用于从衬底周边区域（例如衬底的边缘或斜面）减少残余膜层的方法和装置。 在等离子体处理之后，衬底斜面，背面和衬底周边区域的污染可能会降低。 在一个实施例中，边缘环包括基部圆环，其具有限定其上形成的中心开口的内表面和限定基部圆环的周边的外表面。 基座圆环包括上身和连接到上身的下部。 在基部圆环的内表面和上身的第一上表面上方形成台阶。 该步骤限定在上身的第一上表面上方的口袋。 形成在基部圆环的第一上表面上的多个凸起特征。