公开(公告)号：US20210292894A1

公开(公告)日：2021-09-23

申请号：US16326651

申请日：2017-08-18

Applicant: Applied Materials, Inc.

Inventor： Fei PENG ,  Beom Soo PARK ,  Soo Young CHOI ,  Sanjay D. YADAV ,  Young-Jin CHOI ,  Himanshu JOSHI

IPC: C23C16/44 ,  C23C16/52 ,  H01J37/32 ,  G01K1/02

Abstract: Embodiments described herein generally relate to a substrate processing chamber, and more specifically to an apparatus and method for monitoring a cleaning processing for the substrate processing chamber. A processor receives one or more temperature readings from one or more sensors disposed in a substrate processing chamber. The processor determines a peak for each temperature reading from the one or more temperature readings, which indicate an end of exothermic film clean reaction. Upon determining that each temperature reading has peaked, the process issues a notification to cease the cleaning process.

公开(公告)号：US20210222291A1

公开(公告)日：2021-07-22

申请号：US16096665

申请日：2016-05-24

Applicant: Applied Materials, Inc.

Inventor： Xi HUANG ,  Fei PENG ,  Kiran KRISHNAPUR ,  Ruiping WANG ,  Jrjyan Jerry CHEN ,  Steven VERHAVERBEKE ,  Robert Jan VISSER

IPC: C23C16/04 ,  C23C16/44 ,  H01L51/52 ,  H01L51/56

Abstract: A mask assembly (100) includes a mask frame (102) and a mask screen (104), both of the mask frame (102) and the mask screen (104) made of a metallic material, and a metal coating (125) disposed on exposed surfaces of one or both of the mask frame (102) and the mask screen (104).

公开(公告)号：US20180057935A1

公开(公告)日：2018-03-01

申请号：US15684677

申请日：2017-08-23

Applicant: Applied Materials, Inc.

Inventor： Edward BUDIARTO ,  Beom Soo PARK ,  Soo Young CHOI ,  Fei PENG ,  Todd EGAN

IPC: C23C16/44 ,  B08B9/08 ,  B08B7/00 ,  B08B9/46 ,  G01N21/94 ,  H01J37/32

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  B08B9/0865 ,  B08B9/46 ,  C23C16/52 ,  G01N21/94 ,  H01J37/32853

Abstract: Embodiments of the present invention provide an apparatus and methods for detecting an endpoint for a cleaning process. In one example, a method of determining a cleaning endpoint includes performing a cleaning process in a plasma processing chamber, directing an optical signal to a surface of a shadow frame during the cleaning process, collecting a return reflected optical signal reflected from the surface of the shadow frame, determining a change of reflectance intensity of the return reflected optical signal as collected, and determining an endpoint of the cleaning process based on the change of the reflected intensity. In another example, an apparatus for performing a plasma process and a cleaning process after the plasma process includes an optical monitoring system coupled to a processing chamber, the optical monitoring system configured to direct an optical beam light to a surface of a shadow frame disposed in the processing chamber.