公开(公告)号：US20240352584A1

公开(公告)日：2024-10-24

申请号：US18618937

申请日：2024-03-27

Applicant: Applied Materials, Inc.

Inventor： Yu-Hsuan WU ,  Teng Mao WANG ,  Yan-Chi PAN ,  Yi-Jiun SHIU ,  Jrjyan Jerry CHEN ,  Cheng-yuan LIN ,  Hsiao-Ling YANG ,  Yu-Min WANG ,  Wen-Hao WU

IPC: C23C16/455

CPC classification number: C23C16/45559

Abstract: The present disclosure generally provides an apparatus and method for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore, and a gas deflector having a length and a width unequal to the length coupled to the backing plate by a plurality of outward fasteners coupled to a plurality of outward threaded holes formed in the backing plate, in which a spacer is disposed between the backing plate and the gas deflector, and in which a length to width ratio of the gas deflector is about 0.1:1 to about 10:1.

公开(公告)号：US20210265603A1

公开(公告)日：2021-08-26

申请号：US17313867

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Wen-Hao WU ,  Jrjyan Jerry CHEN

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

公开(公告)号：US20190097175A1

公开(公告)日：2019-03-28

申请号：US15719067

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Wen-Hao WU ,  Jrjyan Jerry CHEN

IPC: H01L51/52 ,  H01L51/56 ,  C23C16/34 ,  C23C16/30 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments described herein generally related to a method for manufacturing an encapsulating structure for a display device, more particularly, for manufacturing a TFE structure including a light scattering layer. The TFE structure further includes one or more barrier layers. All layers of the TFE structure are formed in a PECVD apparatus. The light scattering layer is formed by a PECVD process, in which a silicon containing precursor and a nitrogen containing precursor are introduced into the PECVD apparatus. The flow rate of the silicon containing precursor is equal to or greater than the flow rate of the nitrogen containing precursor. The light scattering layer enhances light out-coupling from a light emitting device disposed under the TFE structure.

公开(公告)号：US20180026054A1

公开(公告)日：2018-01-25

申请号：US15648167

申请日：2017-07-12

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Lai ZHAO ,  Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Yujia ZHAI

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L28/55 ,  H01L29/4908 ,  H01L29/78675

Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

公开(公告)号：US20170018738A1

公开(公告)日：2017-01-19

申请号：US15277353

申请日：2016-09-27

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Soo Young CHOI

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5256 ,  H01L51/56 ,  H01L2251/5346 ,  H01L2251/558

Abstract: Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, an OLED device includes a first barrier layer disposed on a region of a substrate having an OLED structure disposed thereon, a fluorinated buffer layer including a polymer material containing fluorine disposed on the first barrier layer, an interface layer including the polymer material on the fluorinated buffer layer, and a second barrier layer disposed on the interface layer.

Abstract translation: 描述用于形成OLED器件的方法。 具有有机缓冲层和设置在夹在阻挡层之间的有机缓冲层上的界面层的封装结构沉积在OLED结构上。 在一个示例中，OLED器件包括设置在其上设置有OLED结构的基板的区域上的第一阻挡层，包含设置在第一阻挡层上的含氟聚合物材料的氟化缓冲层，包含聚合物材料的界面层 在氟化缓冲层上，以及设置在界面层上的第二阻挡层。

公开(公告)号：US20160351861A1

公开(公告)日：2016-12-01

申请号：US15236603

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Soo Young CHOI

IPC: H01L51/56 ,  C23C16/40 ,  C09D183/04 ,  C23C16/50 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L51/56 ,  C09D183/04 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01L51/0034 ,  H01L51/5256

Abstract: Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.

Abstract translation: 描述用于形成OLED器件的方法。 具有夹在阻挡层之间的缓冲层的封装层沉积在OLED结构上。 缓冲层沉积在第一阻挡层上，并在低于100摄氏度的温度下用含氟等离子体固化。 然后将第二阻挡层沉积在缓冲层上。

公开(公告)号：US20160005998A1

公开(公告)日：2016-01-07

申请号：US14339705

申请日：2014-07-24

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Soo Young CHOI

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5256 ,  H01L51/56 ,  H01L2251/5346 ,  H01L2251/558

Abstract: Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, the method includes depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon, depositing a buffer layer with a fluorine-containing plasma formed from a first gas mixture containing a polymer gas precursor and a fluorine containing gas on the first barrier layer, depositing an interface layer on the buffer layer with a second gas mixture containing the polymer gas precursor, and depositing a second barrier layer on the interface layer.

Abstract translation: 描述用于形成OLED器件的方法。 具有有机缓冲层和设置在夹在阻挡层之间的有机缓冲层上的界面层的封装结构沉积在OLED结构上。 在一个示例中，该方法包括在其上设置有OLED结构的衬底的区域上沉积第一阻挡层，从含有聚合物气体前体的第一气体混合物形成的含氟等离子体形成缓冲层， 在第一阻挡层上形成气体，在含有聚合物气体前体的第二气体混合物的缓冲层上沉积界面层，以及在界面层上沉积第二阻挡层。

公开(公告)号：US20240347551A1

公开(公告)日：2024-10-17

申请号：US18750424

申请日：2024-06-21

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Lai ZHAO ,  Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Yujia ZHAI

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L28/55 ,  H01L29/4908 ,  H01L29/78675

Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

公开(公告)号：US20180114946A1

公开(公告)日：2018-04-26

申请号：US15843295

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Xiangxin RUI ,  Soo Young CHOI

IPC: H01L51/52 ,  H01L21/67 ,  H01L21/687 ,  H01L21/677

CPC classification number: H01L51/5256 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

公开(公告)号：US20180026055A1

公开(公告)日：2018-01-25

申请号：US15617888

申请日：2017-06-08

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Lai ZHAO ,  Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Yujia ZHAI

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02 ,  H01L29/49

CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L28/55 ,  H01L29/4908 ,  H01L29/78675

Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include source and drain electrodes formed on a substrate, a gate insulating layer formed on a substrate covering the source and drain electrodes, wherein the gate insulating layer is hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer comprising metal, and a gate electrode formed above or below the gate insulating layer