公开(公告)号：US20250022755A1

公开(公告)日：2025-01-16

申请号：US18898420

申请日：2024-09-26

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng LEI ,  Brad EATON ,  Madhava Rao YALAMANCHILI ,  Saravjeet SINGH ,  Ajay KUMAR ,  James M. HOLDEN

IPC: H01L21/822 ,  B23K26/36 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67 ,  H01L21/683 ,  H01L21/78 ,  H01L23/544

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.