公开(公告)号：US20160035577A1

公开(公告)日：2016-02-04

申请号：US14775651

申请日：2014-03-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei-Sheng LEI ,  Mohammad Kamruzzaman CHOWDHURY ,  Todd EGAN ,  Brad EATON ,  Madhava Rao YALAMANCHILI ,  Ajay KUMAR

IPC: H01L21/308 ,  H01L21/3065 ,  H01L21/687 ,  B23K26/402 ,  H01L21/67 ,  H01L21/673 ,  H01L21/82 ,  B23K26/364

CPC classification number: H01L21/3086 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/172 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/67069 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67383 ,  H01L21/68707 ,  H01L21/78 ,  H01L21/82

Abstract: Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.

Abstract translation: 具有多个IC的切割基板的方法。 一种方法包括形成多层掩模，该多层掩模包括设置在半导体衬底上的水溶性基底层上的激光能量吸收不可光限定的顶涂层。 因为激光吸收材料层是不可光定型的，所以可以避免与常规光致抗蚀剂配方相关的材料成本。 掩模是用激光划线工艺直接写入图案，以提供具有间隙的图案化掩模。 图案化使IC之间的衬底的区域暴露。 激光发射带（例如，UV带和/或绿色带）内的掩模层的吸收促进了良好的划线质量。 然后可以通过图案化掩模中的间隙等离子体蚀刻衬底，以在等离子体蚀刻期间用掩模保护IC来对IC进行分离。 然后可以在分离后溶解掩模的可溶性基底层，从而有助于去除该层。

公开(公告)号：US20250022755A1

公开(公告)日：2025-01-16

申请号：US18898420

申请日：2024-09-26

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng LEI ,  Brad EATON ,  Madhava Rao YALAMANCHILI ,  Saravjeet SINGH ,  Ajay KUMAR ,  James M. HOLDEN

IPC: H01L21/822 ,  B23K26/36 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67 ,  H01L21/683 ,  H01L21/78 ,  H01L23/544

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

公开(公告)号：US20150064878A1

公开(公告)日：2015-03-05

申请号：US14091014

申请日：2013-11-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei-Sheng LEI ,  Brad EATON ,  Aparna IYER ,  Madhava Rao YALAMANCHILI ,  Ajay KUMAR ,  Jungrae PARK

IPC: H01L21/78 ,  B23K26/36 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/78 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/67069 ,  H01L21/67207

Abstract: In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation while also removing an oxidation layer from metal bumps on the wafer. In one embodiment, a method includes forming a mask over the semiconductor wafer covering the plurality of ICs, the plurality of ICs including metal bumps or pads with an oxidation layer. The method includes patterning the mask with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the ICs. The method includes plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the plurality of ICs and remove the oxidation layer from the metal bumps or pads.

Abstract translation: 在实施例中，涉及初始激光划片和随后等离子体蚀刻的混合晶片或衬底切割工艺被实现用于裸片分离，同时还从晶片上的金属凸块去除氧化层。 在一个实施例中，一种方法包括在覆盖多个IC的半导体晶片上形成掩模，所述多个IC包括具有氧化层的金属凸块或焊盘。 该方法包括用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模，暴露半导体晶片在IC之间的区域。 该方法包括通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以分离多个IC并从金属凸块或焊盘移除氧化层。