公开(公告)号：US09478433B1

公开(公告)日：2016-10-25

申请号：US14968500

申请日：2015-12-14

Applicant: Applied Materials, Inc.

Inventor： Qingjun Zhou ,  Jungmin Ko ,  Tom Choi ,  Sean Kang ,  Jeremiah Pender ,  Srinivas D. Nemani ,  Ying Zhang

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31105 ,  H01L21/32136 ,  H01L21/32137

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

Abstract translation: 本文描述的实施例涉及用于图案化衬底的方法。 诸如双重图案化和四重图案化工艺的图案化工艺可以受益于本文所述的实施例，其包括对间隔材料执行惰性等离子体处理，对间隔材料的处理区域进行蚀刻工艺，并重复惰性等离子体处理 和蚀刻工艺以形成期望的间隔物轮廓。 惰性等离子体处理工艺可以是偏压工艺，并且蚀刻工艺可以是无偏的工艺。 可以控制各种加工参数，例如工艺气体比和压力，以影响所需的间隔物轮廓。

公开(公告)号：US09721807B2

公开(公告)日：2017-08-01

申请号：US15080117

申请日：2016-03-24

Applicant: Applied Materials, Inc.

Inventor： Qingjun Zhou ,  Jungmin Ko ,  Tom Choi ,  Sean Kang ,  Jeremiah Pender ,  Srinivas D. Nemani ,  Ying Zhang

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31105 ,  H01L21/32136 ,  H01L21/32137

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.