公开(公告)号：US20150056814A1

公开(公告)日：2015-02-26

申请号：US14059416

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Jungmin KO ,  Sean S. KANG ,  Jeremiah T. PENDER ,  Srinivas D. NEMANI ,  Bradley HOWARD

IPC: H01L21/3065 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/76802

Abstract: Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.

Abstract translation: 提供了使用主蚀刻步骤和循环蚀刻工艺的组合蚀刻设置在基板上的材料层的方法。 该方法包括在处理室中对氧化物层进行主蚀刻处理，在氧化物层中形成具有第一预定深度的特征，通过将处理气体混合物供应到处理室中来对衬底进行处理，以处理 在所述氧化物层中蚀刻特征，通过向所述处理室中提供化学蚀刻气体混合物，在所述基板上进行化学蚀刻处理，其中所述化学蚀刻气体至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺进一步蚀刻 将特征提供到第二预定深度，并且通过将过渡气体混合物供应到处理室中来对蚀刻的基板执行转变处理。

公开(公告)号：US20150140827A1

公开(公告)日：2015-05-21

申请号：US14541978

申请日：2014-11-14

Applicant: Applied Materials, Inc.

Inventor： Chia-Ling KAO ,  Sean KANG ,  Jeremiah T. PENDER ,  Srinivas D. NEMANI ,  He REN ,  Mehul NAIK

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32834 ,  H01J37/32871 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829

Abstract: Implementations described herein generally relate to semiconductor manufacturing and more particularly to methods for etching a low-k dielectric barrier layer disposed on a substrate using a non-carbon based approach. In one implementation, a method for etching a barrier low-k layer is provided. The method comprises (a) exposing a surface of the low-k barrier layer to a treatment gas mixture to modify at least a portion of the low-k barrier layer and (b) chemically etching the modified portion of the low-k barrier layer by exposing the modified portion to a chemical etching gas mixture, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride gas or at least a hydrogen gas and a nitrogen trifluoride gas.

Abstract translation: 本文描述的实施方式通常涉及半导体制造，更具体地涉及使用非碳基方法蚀刻设置在基板上的低k电介质阻挡层的方法。 在一个实施方案中，提供了用于蚀刻阻挡层低k层的方法。 该方法包括（a）将低k阻挡层的表面暴露于处理气体混合物以修饰低k阻挡层的至少一部分，和（b）化学蚀刻低k阻挡层的修饰部分 通过将改性部分暴露于化学蚀刻气体混合物，其中化学蚀刻气体混合物至少包含铵气体和三氟化氮气体，或至少包含氢气和三氟化氮气体。