公开(公告)号：US20150056814A1

公开(公告)日：2015-02-26

申请号：US14059416

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Jungmin KO ,  Sean S. KANG ,  Jeremiah T. PENDER ,  Srinivas D. NEMANI ,  Bradley HOWARD

IPC: H01L21/3065 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/76802

Abstract: Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.

Abstract translation: 提供了使用主蚀刻步骤和循环蚀刻工艺的组合蚀刻设置在基板上的材料层的方法。 该方法包括在处理室中对氧化物层进行主蚀刻处理，在氧化物层中形成具有第一预定深度的特征，通过将处理气体混合物供应到处理室中来对衬底进行处理，以处理 在所述氧化物层中蚀刻特征，通过向所述处理室中提供化学蚀刻气体混合物，在所述基板上进行化学蚀刻处理，其中所述化学蚀刻气体至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺进一步蚀刻 将特征提供到第二预定深度，并且通过将过渡气体混合物供应到处理室中来对蚀刻的基板执行转变处理。

公开(公告)号：US20210066064A1

公开(公告)日：2021-03-04

申请号：US17004850

申请日：2020-08-27

Applicant: APPLIED MATERIALS, INC.

Inventor： He REN ,  Shi YOU ,  Hao JIANG ,  Raymond HUNG ,  Mehul NAIK ,  Chentsau Chris YING ,  Mang-Mang LING ,  Lin DONG

IPC: H01L21/02

Abstract: Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.

公开(公告)号：US20150079798A1

公开(公告)日：2015-03-19

申请号：US14029769

申请日：2013-09-17

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Sean S. KANG ,  Jeremiah T. P. PENDER ,  Srinivas D. NEMANI ,  Bradley HOWARD

IPC: H01L21/306

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829

Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

Abstract translation: 提供了使用循环蚀刻工艺蚀刻设置在基板上的蚀刻停止层的方法。 在一个实施例中，蚀刻停止层的蚀刻方法包括：通过将处理气体混合物供给到处理室中来对其上设置有氮化硅层的基板进行处理处理，以处理氮化硅层，并进行化学蚀刻工艺 在所述基板上通过向所述处理室供给化学蚀刻气体混合物，其中所述化学蚀刻气体混合物至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺蚀刻所处理的氮化硅层。

公开(公告)号：US20140357083A1

公开(公告)日：2014-12-04

申请号：US14283694

申请日：2014-05-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Mang-Mang LING ,  Lina ZHU ,  Nancy FUNG ,  Kwang-Soo KIM ,  Sean S. KANG ,  Srinivas D. NEMANI

IPC: H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/31138 ,  B81C1/00031 ,  B81C2201/0149 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/32139

Abstract: Embodiments of methods and an apparatus for utilizing a directed self-assembly (DSA) process on block copolymers (BCPs) to form a defect-free photoresist layer for feature transfer onto a substrate are provided. In one embodiment, a method for performing a dry development process includes transferring a substrate having a layer of block copolymers disposed thereon into an etching processing chamber, wherein at least a first type and a second type of polymers comprising the block copolymers are aggregated into a first group of regions and a second group of regions on the substrate, supplying an etching gas mixture including at least a carbon containing gas into the etching processing chamber, and predominately etching the second type of the polymers disposed on the second groups of regions on the substrate in the presence of the etching gas mixture.

Abstract translation: 提供了用于利用嵌段共聚物（BCP）上的定向自组装（DSA）工艺以形成用于将特征转移到衬底上的无缺陷光致抗蚀剂层的方法和装置的实施方案。 在一个实施方案中，用于进行干显影处理的方法包括将其上设置有嵌段共聚物层的基材转移到蚀刻处理室中，其中至少第一类型和第二类型的包含嵌段共聚物的聚合物聚集成 第一组区域和第二组区域，将至少包含含碳气体的蚀刻气体混合物供应到蚀刻处理室中，并且主要蚀刻位于第二组区域上的第二类聚合物 衬底在蚀刻气体混合物的存在下。

公开(公告)号：US20240249936A1

公开(公告)日：2024-07-25

申请号：US18158916

申请日：2023-01-24

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Jong Mun KIM ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/02244 ,  H01L21/02238 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76816

Abstract: Embodiments of the present disclosure relate to methods for patterning a material layer on a substrate. The method includes forming a hard mask layer on a material layer disposed on a substrate. The material layer includes a plurality of first layers and a plurality of second layers alternately formed over the substrate. The method further includes performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas; performing an oxidation process to oxidize a sidewall of the features by supplying an oxidation gas; and performing a second etch process to etch the sidewall of the features formed in the material layer by suppling a second etching gas.

公开(公告)号：US20210143323A1

公开(公告)日：2021-05-13

申请号：US16681351

申请日：2019-11-12

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Minrui YU ,  Chando PARK ,  Mang-Mang LING ,  Jaesoo AHN ,  Chentsau Chris YING ,  Srinivas D. NEMANI ,  Mahendra PAKALA ,  Ellie Y. YIEH

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.

公开(公告)号：US20210017641A1

公开(公告)日：2021-01-21

申请号：US16904396

申请日：2020-06-17

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Thomas KWON ,  Jong Mun KIM ,  Chentsau Chris YING

IPC: C23C16/04 ,  C23C16/26 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.