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公开(公告)号:US20230304183A1
公开(公告)日:2023-09-28
申请号:US18118336
申请日:2023-03-07
Applicant: Applied Materials, Inc.
Inventor: Marvin Louis BERNT , Jon WOODYARD , Niranjan KHASGIWALE , Vincent DICAPRIO
IPC: C25D5/02 , H01L21/288 , H01L21/66 , C25D21/12 , G03F1/70
CPC classification number: C25D5/022 , H01L21/2885 , H01L22/12 , C25D21/12 , G03F1/70
Abstract: Methods and apparatus for electroplating a substrate incorporate aspects of digital lithography and feedback from electroplating processes to improve characteristics of plating material based on die patterns. In some embodiments, a method of electroplating a substrate may include receiving a die design, forming a first lithographic pattern for a first substrate based on the die design, using a digital lithography process to pattern the first substrate with the first lithographic pattern, using an electroplating process to deposit material on the first substrate, using a metrology process to determine at least one parameter of the deposited material on the first substrate, and forming a second lithographic pattern from the first lithographic pattern for a second substrate based, at least in part, on the at least one parameter received directly from the metrology process on the first substrate by the digital lithographic process for the second substrate.
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公开(公告)号:US20230307320A1
公开(公告)日:2023-09-28
申请号:US17705239
申请日:2022-03-25
Applicant: Applied Materials, Inc.
Inventor: Marvin Louis BERNT , Jon WOODYARD
IPC: H01L23/48 , H01L23/532 , H01L21/768
CPC classification number: H01L23/481 , H01L23/53238 , H01L21/76898 , H01L21/76877
Abstract: Methods and apparatus for single side filling of through-vias in a substrate are provided herein. In some embodiments, a method of filling through-vias in a substrate includes: coupling a first side of the substrate having through-vias to a carrier plate with an adhesive layer; exposing the through-vias to a conductive layer disposed between the carrier plate and the first side of the substrate; and plating the substrate using the conductive layer as a conductive seed layer to fill the through-vias with a conductive material.
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