公开(公告)号：US20150064914A1

公开(公告)日：2015-03-05

申请号：US14474841

申请日：2014-09-02

Applicant: Applied Materials, Inc.

Inventor： Byungkook KONG ,  Jun Wan KIM ,  Wonmo AHN ,  Jeong Hyun YOO ,  Hun Sang KIM

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/31122 ,  H01L21/6831

Abstract: In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.

Abstract translation: 在一个实施例中，提出了一种用于蚀刻硼掺杂硬掩模层的方法。 该方法包括使包含至少CH 4的处理气体流入处理室。 在处理气体中形成等离子体，并在等离子体存在下蚀刻硼掺杂的硬掩模层。 在其他实施方案中，用于蚀刻硼掺杂的硬掩模层的工艺气体包括CH 4，Cl 2，SF 6和O 2。

公开(公告)号：US20150064880A1

公开(公告)日：2015-03-05

申请号：US14015780

申请日：2013-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Wan KIM ,  Hun Sang KIM ,  Changhun LEE ,  Ho Jeong KIM ,  Yi ZHOU

IPC: H01L21/322

CPC classification number: H01L21/02057

Abstract: Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising CxHy and oxygen, wherein x and y are integers, forming a plasma from the gas mixture, binding halogen residues with species comprising the plasma to form non-volatile halogen containing elements, and pumping the non-volatile halogen containing elements from a chamber containing the substrate.

Abstract translation: 提供了使用卤素化学法蚀刻的硅表面上进行后蚀刻处理的方法。 这些方法可以原位执行，其中硅表面在其中蚀刻，非原位的室或在组合原位和非原位后蚀刻处理工艺的混合工艺中。 在一个实施例中，后蚀刻处理工艺包括将具有使用卤素化学物质蚀刻的硅表面的衬底暴露于包含C x H y和氧的气体混合物，其中x和y是整数，从气体混合物形成等离子体，将卤素残基与包含 所述等离子体形成非挥发性含卤素元素，并且从含有所述基底的室泵送所述非挥发性含卤素元素。