公开(公告)号：US20140212994A1

公开(公告)日：2014-07-31

申请号：US14162521

申请日：2014-01-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Hun Sang KIM ,  Sang Wook KIM ,  Anisul H. KHAN

IPC: H01L21/67 ,  H01L21/32 ,  H01L21/66

CPC classification number: H01L22/30 ,  H01J37/321 ,  H01J37/32651 ,  H01L21/0337 ,  H01L21/32136 ,  H01L21/32139

Abstract: Embodiments of the present disclosure generally provide apparatus and method for improving processing uniformity by reducing external magnetic noises. One embodiment of the present disclosure provides an apparatus for processing semiconductor substrates. The apparatus includes a chamber body defining a vacuum volume for processing one or more substrate therein, and a shield assembly for shielding magnetic flux from the chamber body disposed outside the chamber body, wherein the shield assembly comprises a bottom plate disposed between the chamber body and the ground to shield magnetic flux from the earth.

Abstract translation: 本公开的实施例通常提供通过减少外部磁噪声来改善处理均匀性的装置和方法。 本公开的一个实施例提供了一种用于处理半导体衬底的装置。 该装置包括限定用于在其中处理一个或多个基板的真空容积的室主体和用于屏蔽设置在室主体外部的室主体的磁通的屏蔽组件，其中屏蔽组件包括设置在室主体和 用于屏蔽来自地球的磁通的地面。

公开(公告)号：US20150064880A1

公开(公告)日：2015-03-05

申请号：US14015780

申请日：2013-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Wan KIM ,  Hun Sang KIM ,  Changhun LEE ,  Ho Jeong KIM ,  Yi ZHOU

IPC: H01L21/322

CPC classification number: H01L21/02057

Abstract: Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising CxHy and oxygen, wherein x and y are integers, forming a plasma from the gas mixture, binding halogen residues with species comprising the plasma to form non-volatile halogen containing elements, and pumping the non-volatile halogen containing elements from a chamber containing the substrate.

Abstract translation: 提供了使用卤素化学法蚀刻的硅表面上进行后蚀刻处理的方法。 这些方法可以原位执行，其中硅表面在其中蚀刻，非原位的室或在组合原位和非原位后蚀刻处理工艺的混合工艺中。 在一个实施例中，后蚀刻处理工艺包括将具有使用卤素化学物质蚀刻的硅表面的衬底暴露于包含C x H y和氧的气体混合物，其中x和y是整数，从气体混合物形成等离子体，将卤素残基与包含 所述等离子体形成非挥发性含卤素元素，并且从含有所述基底的室泵送所述非挥发性含卤素元素。

公开(公告)号：US20200152431A1

公开(公告)日：2020-05-14

申请号：US16189440

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Changhun LEE ,  Michael D. WILLWERTH ,  Valentin N. TODOROW ,  Hean Cheal LEE ,  Hun Sang KIM

IPC: H01J37/32 ,  G03F7/42

Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

公开(公告)号：US20150064914A1

公开(公告)日：2015-03-05

申请号：US14474841

申请日：2014-09-02

Applicant: Applied Materials, Inc.

Inventor： Byungkook KONG ,  Jun Wan KIM ,  Wonmo AHN ,  Jeong Hyun YOO ,  Hun Sang KIM

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/31122 ,  H01L21/6831

Abstract: In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.

Abstract translation: 在一个实施例中，提出了一种用于蚀刻硼掺杂硬掩模层的方法。 该方法包括使包含至少CH 4的处理气体流入处理室。 在处理气体中形成等离子体，并在等离子体存在下蚀刻硼掺杂的硬掩模层。 在其他实施方案中，用于蚀刻硼掺杂的硬掩模层的工艺气体包括CH 4，Cl 2，SF 6和O 2。